Add time:07/29/2019         Source:sciencedirect.com

We investigated the effect of helium ion beam treatment on the etching rate of silicon dioxide in a water based solution of hydrofluoric acid. A 460-nm-thick silicon dioxide film on silicon was irradiated with helium ions having energies of 20 keV and 30 keV with ion fluences ranging from 1014 cm−2 to 1017 cm−2. The dependence of the etching rate on depth was obtained and compared with the depth distribution of ion-induced defects, which was obtained from numerical simulation. Irradiation with helium ions results in an increase of the etching rate of silicon dioxide. The dependence of the etching rate on the calculated concentration of ion-induced defects is described.

We also recommend Trading Suppliers and Manufacturers of Silicon dioxide (cas 112945-52-5). Pls Click Website Link as below: cas 112945-52-5 suppliers