Encyclopedia

  • Following the oxidation of YTTRIUM SILICIDE (cas 12067-55-9) epitaxially grown on Si(1 1 1) by core level photoemission spectroscopy
  • Add time:07/31/2019         Source:sciencedirect.com

    We have identified, by means of synchrotron radiation X-ray photoemission spectroscopy, several core-level shifted components in the Si-2p photoemission core level peak from a thin YTTRIUM SILICIDE (cas 12067-55-9) layer epitaxially grown on a Si(1 1 1) surface. We have unequivocally assigned these components to different environments of the Si atoms in the silicide structure. This information has been used to monitor a surface oxidation process promoted by room temperature oxygen adsorption, identifying the final product of this reaction as a silicate-type ternary compound.

    We also recommend Trading Suppliers and Manufacturers of YTTRIUM SILICIDE (cas 12067-55-9). Pls Click Website Link as below: cas 12067-55-9 suppliers


    Prev:Ion beam synthesis and characterization of YTTRIUM SILICIDE (cas 12067-55-9)
    Next: Yttrium ultra-thin films on the Si(100)2 × 1 surface and their in situ oxidation process)

About|Contact|Cas|Product Name|Molecular|Country|Encyclopedia

Message|New Cas|MSDS|Service|Advertisement|CAS DataBase|Article Data|Manufacturers | Chemical Catalog

©2008 LookChem.com,License: ICP

NO.:Zhejiang16009103

complaints:service@lookchem.com Desktop View