Add time:08/03/2019         Source:sciencedirect.com

We consider II–VI narrow gap semiconducting alloys: mercury cadmium telluride, Hg(1−x)Cd(x)Te (MCT), mercury zinc telluride, Hg(1−x)Zn(x)Te (MZT), and mercury zinc selenide, Hg(1−x)Zn(x)Se (MZS). MCT is emphasized for actual calculations, but a table of values needed in all calculations is presented. These materials are of interest because of their application to infrared detectors and related devices, and because they are candidates for low gravity crystal growth to improve uniformity. We present new calculations of the scanning tunneling optical spectroscopy (STOS) current from which the local energy gap, a function of x, and hence the stoichiometry (x) can be determined as a function of position with presumably high spatial resolution. The low temperature tunneling current (vs. photon frequency) has a sharper onset at the band gap than the low temperature optical absorption. This sharp onset originates from the rapid increase in the integrated transmission probabilities and is greatly enhanced by large diffusion lengths. Thus, STOS should be a competitive technique, compared to optical absorption, for determining the local stoichiometry, a property that is important for characterizing crystals.

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