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  • Situ preparation of SiO2 on graphene-assisted anti-oxidation for resol phenolic resin
  • Add time:08/07/2019         Source:sciencedirect.com

    Easily oxidized group of traditional phenolic resin (PF) results in poor oxidation resistance at high temperature, which is unable to satisfy the requirements of advanced aerospace vehicles for high-performance application, especially ablation resistance. In order to improve the oxidation resistance of PF, a SiO2/RGO binary hybrid nanomaterial assisted anti-oxidation for PF was designed. Here, we reported a simple sol-gel process and high temperature reduction for synthesis of dispersed SiO2 nanoparticles on graphene (G-S). The designed structure of G-S was confirmed by FTIR, XRD, SEM and TEM. Introduction of G-S into PF (P-G-S) was beneficial to enhancement of oxidation resistance in whole temperature range (0–1000 °C). P-G-S-3 (3 wt.% of G-S) exhibits both lower thermal oxidative decomposition rate and higher termination temperature of thermal oxidative decomposition (increase from about 750 °C up to 900 °C) than those of neat PF in air. In addition, P-G-S-3 decomposed by thermal oxidation in air (at 557 °C, weight loss> 30 wt.%) later than neat PF (at 519 °C, weight loss> 20 wt.%). What's more, compared to the collapse of skeleton structure and few residual fragments of neat PF, P-G-S-3 showed greater oxidation resistance which resulted in the retention of a large number of aromatic C-C, methylene and different kinds of ether bond at temperature from 550 °C to 700 °C by FTIR and XPS. The section of P-G-S-3 expresses skin lamination that can act as a barrier to slow down the diffusion of oxygen into resin matrix. And SiO2 on the surface protected the matrix continually as indicated from the SEM analysis.

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