Add time:08/08/2019         Source:sciencedirect.com

Appropriate dispersion of cocatalyst on semiconductor for improving photocatalytic H2 production efficiency is a challenging work in semiconductor photocatalysis. Herein, we constructed the noble-metal-free CoSx modified tubular sulfur doped carbon nitride (SCN) photocatalysts by chemical precipitation process. The amorphous CoSx well dispersed on SCN served as H2 production sites, which reduced the overpotential and inhibited the recombination of photogenerated carriers by interfacial charge transfer. Maximized H2 production rate of 573.06 μmol g−1 h−1 under visible light irradiation was obtained by optimizing the CoSx loading proportion to 2.4%, which was higher than that of 0.75 wt% Pt/SCN. In addition, a possible mechanism for improved H2 production activity was proposed based on the experiments and discussion. This work provides a new strategy to design rational structure of non-noble metal cocatalyst modified photocatalyst to further improve H2 production performance.

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