Add time:08/09/2019         Source:sciencedirect.com

Hybridization of Caesium and Formamidinium is considered as a promising approach to fabricate methylammonium-free perovskites for photovoltaic applications. Typically, CsxFA1-xPbI3 perovskite solar cells employ the normal device structure, which incorporates a high temperature processed rigid metal oxide layer as the electron transporting layer. This increases the cost of production and limits the use of Caesium-Formamidinium based perovskites for low temperature flexible substrates. In this study, we employed low temperature processed metal oxide free planar-heterojunction Caesium Formamidinium Lead Triiodide (Cs0.15FA0.85PbI3) perovskites in an inverted device structure and systematically investigated the role of post deposition annealing temperature on the film and device properties. The annealing temperature was varied from 130 °C to 170 °C. The film morphology and optical and charge extraction properties of devices is found to be highly dependent on the annealing temperature. The best average power conversion efficiency of 11.72% was obtained for 150 °C annealing temperature. These results show that determining the optimum post deposition annealing temperature is crucial to ensure successful charge extraction from the fabricated devices in order to achieve improved performance.

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