Add time:08/09/2019         Source:sciencedirect.com

Indium antimonide has been grown on the (111) face of cleaved and of polished BaF2 by molecular beam epitaxy (MBE). X-ray and Nomarski microscopic examination indicate high quality films. Films were doped n and p type with silicon and beryllium. The dopant incorporation is close to that established for MBE GaAs growth. Hall and resistivity measurements indicate a low temperature conversion to p-type conduction which is attributed to the strain arising from the difference between the thermal expansions of the film and the substrate. This effect imposes severe limitations on practical applications of this film-substrate system. The existence of this effect on other substrates is discussed.

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