Add time:08/12/2019         Source:sciencedirect.com

The effect of the oxygen exposure on ruthenium atomic layer deposition (ALD) was investigated. Ru ALD was carried out using BIS(CYCLOPENTADIENYL)RUTHENIUM (cas 1287-13-4) and oxygen gas. To investigate the effect of the oxygen exposure, the total oxygen exposure was changed by two different ways; change of exposure time at a constant flow and change of flow at a constant exposure time. While the increase in oxygen exposure time did not change the film properties, the increase in the oxygen flow rate resulted in a significant increase in the growth rate and resistivity. The properties of ALD Ru films prepared at different oxygen exposure conditions were analyzed by various techniques including synchrotron radiation X-ray diffraction, X-ray photoelectron spectroscopy, X-ray reflectivity, and transmission electron microscopy. The growth mechanism is discussed based on the analysis results.

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