Add time:07/13/2019 Source:sciencedirect.com
Photoluminescence (PL), C-V and I-V characteristics of MOVPE-grown ZnSe:N doped using Triallylamine (cas 102-70-5) (TAN) have been investigated. In our experiments, the use of TAN as dopant source does and lead to the incorporation of nitrogen into the lattice at the VIII ratio optimized for the growth of undoped ZnSe. At smaller VIII ratios a high concentration of donor states (1017 – 1018 cm−3) appears leading to the formation of a broad PL band at 2.791 – 2.79w eV caused by a transition from the states formed by an overlap of the conduction band and donor states to the valence band. The acceptor states with an activation energy of 80 meV are most likely formed by oxygen contamination of TAN.
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