Add time:08/13/2019         Source:sciencedirect.com

The surface decomposition of Triisobutylgallium (cas 17150-84-4) (TIBGa) on GaAs(0 0 1) has been studied employing supersonic molecular beam scattering. It was found that TIBGa molecules were adsorbed on GaAs(0 0 1) surfaces without dissociation at temperatures lower than 200°C through a precursor mediated adsorption mechanism. The depth of the molecular physisorption well was estimated as 7.4 kcal/mol on c(4×4) and 2.2 kcal/mol on (2×4) initial surface. The dissociation of injected molecules started at the substrate temperature of about 200°C and completed at about 300°C. No desorption of diisobutylgallium (DIBGa) or monoisobutylgallium (MIBGa) was found during TIBGa decomposition. The products are suggested to be gallium and an iso-butyl group. The activation energy for the desorption of isobutene was obtained as 12 kcal/mol revealing that the iso-butyl group was loosely adsorbed on the surface.

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