Add time:08/24/2019         Source:sciencedirect.com

Selective area deposition of platinum suicide on exposed silicon areas of n-type, Si(100) substrates patterned with a polyimide resist has been demonstrated by using the thermal decomposition of the molecular precursor, Pt(PF3)4, under chemical beam conditions. Selectivity was studied as a function of precursor partial pressure, substrate temperature and duration of deposition. Selectivity was most easily obtained at a precursor partial pressure of 1.33 × 10−4 Pa, substrate temperature of 250 °C and deposition times ranging from 18 to 30 min. Atomic force microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy analyses of selectively deposited films strongly suggested the complete interdiffusion of Si and Pt. Speculations on possible mechanisms for selectivity are discussed.

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