Add time:08/24/2019         Source:sciencedirect.com

P type copper gallium telluride (CuGaTe2) synthesized from the elements was used as a source for the preparation of films by flash evaporation. Films of different thicknesses were prepared and their electrical conductivity was measured in the temperature range 100–300 K. While in the case of thin films the low temperature conduction could be explained by a variable range hopping process, for thicker films the conduction process could be attributed to thermally assisted tunnelling through the grain boundary barrier. The high temperature conductivity data fits well to the process of transport by thermionic emission over the grain boundaries.

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