Add time:08/25/2019 Source:sciencedirect.com
A new Mo/V-arsenite-based heteropolyoxometalate, (NH4)6[As4Mo6V3O36H3]·5H2O (1) has been synthesized and structurally characterized. The novel {As4Mo6V3O36H3} building block consists of one Anderson-type {AsMo6O27} unit and one ring-like {As3V3O15} unit linked together via μ3-O2– moieties, which is first observed in AsO33−-based mixed-metal Mo/V heteropolyoxometalate systems. Interestingly, compound 1 possesses the band gap value at ca. 3.02 eV and exhibits obviously the response of surface photovoltage and electric field-induced surface photovoltage, which is similar to the semiconductor materials.
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