Add time:08/28/2019         Source:sciencedirect.com

In the present work, nanocrystalline disodium 6-hydroxy-5-[(2-methoxy-5-methyl-4-sulfophenyl) azo]-2-naphthalenesulfonate (AR) thin films based devices were prepared by using electro-spin technique under best conditions. The nanostructure characteristics of the AR surfaces were found to be nanosphere-like structure by using scanning electron microscopy (SEM). The dark and 100 mW/cm2 illuminated current density–voltage (J–V) characteristics of the prepared heterojunctions by using different metal like Pt, Al and Cu were discussed at a temperature of 300 K. A diode-like behavior was obtained for all the studied devices and the rectification characteristics were obtained and compared. In addition, the arrangement protection and ideality factors demonstrated high interface reliance. Exposure of light on the AR dye / different metal structures produces a photocurrent which suggests the production of free carriers in all cases with different values which elucidate that these structures are promising for optoelectronic device applications.

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