Add time:08/27/2019         Source:sciencedirect.com

Non-stoichiometric samarium monosulfide (SmSx, 0.55≤x≤1.2) was synthesized from Sm2S3 and SmH3 at 1273 K for 3 h under vacuum. The influence of reaction ratio of Sm2S3 to SmH3 on the fabrication of SmSx was investigated. The fabrication of SmS required the molar ratio of Sm2S3 to SmH3 above 1. Lattice parameter of synthetic SmSx increased firstly and then decreased to saturate following with the addition of SmH3 content. SmSx compact was sintered at 1373 K by spark plasma sintering. Density of synthetic SmSx was about 99% of theory density. Seebeck coefficient of n-type semiconductor SmSx decreased as temperature rose. The absolute value was distributed between 170–280 μV/K. The electrical resistivity of SmSx (0.86≤x≤1.07) decreased with temperature increasing and showed similar temperature dependence. The surplus Sm which randomly distributed in the SmSx (0.55≤x≤0.75) matrix led to a remarked reduction of electrical resistivity. The optimized power factor for SmS0.6 and SmS0.75 could reach 1500 μW/(K2·m) at 600 K.

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