Add time:09/09/2019 Source:sciencedirect.com
The Chemical Vapor Deposition growth mechanism of a hafnium silicate film deposited by means of the co-flow of two precursors, TDEAH (tetrakis-diethyl-amino-hafnium) and 4DMAS (tetrakis-dimethyl-amino-silane), is characterized. Typical growth kinetics demand that the deposition rate increases and the silicon concentration remain stable with increasing reactor pressure. Though the deposition rate follows the expected growth kinetics, the silicon concentration in the silicate does not and exhibits an abnormal increase with increasing reactor pressure. To understand this atypical behavior the formation of pure HfO2 from TDEAH and pure SiOx from 4DMAS is first studied. Experimental results show that whereas the HfO2 deposition is well behaved and fits a diffusion-based model defined by assuming diffusion of TDEAH through a boundary layer, the deposition of SiOx with 4DMAS requires Hf-O nucleation sites and self-saturates after a single Si―O monolayer is formed. Based on these observations, a model is developed for hafnium silicate formation. The Atomic Layer Deposition like behavior of 4DMAS decomposition results in a deposition rate and film stoichiometry that are weakly sensitive to the 4DMAS partial pressure, and instead are driven by the TDEAH reaction. Since TDEAH operates within a transport-limited regime, the deposition rate is insensitive to substrate temperature, and is only controlled by the TDEAH partial pressure and the gas phase kinematics, rendering the process robust and easily controllable with excellent reproducibility.
We also recommend Trading Suppliers and Manufacturers of TETRAKIS(DIETHYLAMINO)HAFNIUM (cas 19824-55-6). Pls Click Website Link as below: cas 19824-55-6 suppliers
About|Contact|Cas|Product Name|Molecular|Country|Encyclopedia
Message|New Cas|MSDS|Service|Advertisement|CAS DataBase|Article Data|Manufacturers | Chemical Catalog
©2008 LookChem.com,License: ICP
NO.:Zhejiang16009103
complaints:service@lookchem.com Desktop View