Add time:09/29/2019         Source:infona.pl

QUATERRYLENE (cas 188-73-8) field-effect transistors (FETs) were formed on a silicon oxide (SiO 2 ) layer and on an octadecyltrichlorosilane self-assembled monolayer (OTS-SAM). To elucidate the transport mechanisms in the respective devices, we examined the dependence of carrier mobility on film thickness and temperature. On the OTS surface, a marked increase in the carrier mobility was observed in the initial layers, indicating that the accumulated carriers were distributed closer to the interface than were those on the SiO 2 surface. Moreover, the carrier transport in the respective devices exhibited distinct behaviors in the low temperature range, particularly in the initial layers. On the SiO 2 surface the carrier mobility depended strongly on temperature; the value drastically declined with the decreasing temperature from 300K down to 60K. On the OTS surface, the carrier mobility showed temperature-independent transport below 210K. This maintenance of the carrier transport at low temperatures was caused by the termination of the trap-state density near the interface. These results clearly reveal that the OTS treatment effectively helped improve the interface properties because of a reduction in the density of the carrier traps, dramatically facilitating the carrier transport in the initial layers.

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