Add time:07/21/2019         Source:sciencedirect.com

Thin films of zinc sulfide were prepared by ultrasonically spraying a toluene solution of bis(diethyldithiocarbamato)zinc(II) onto silicon, sapphire and gallium arsenide substrates at 460–520 °C. The films prepared on silicon or sapphire were found to have a highly oriented hexagonal structure, while those deposited onto cubic (100) gallium arsenide showed a highly oriented cubic structure. The films were characterized by X-ray diffraction analysis, ellipsometry, scanning electron microscopy, and IR spectroscopy.

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