Add time:07/16/2019         Source:sciencedirect.com

Bis(trimethylsilyl)ethylamine (BTMSEA) was synthesized and characterized as CVD precursor for silicon carbonitride SiCxNy films synthesis (vapor pressure, thermodynamic modeling). SiCxNy films were deposited by PECVD from BTMSEA.in.the.temperature.range.of.100-700 oC.using.two.additional.gases.(He.or.NH3)..FT-IR,.Raman spectroscopy, ellipsometry, EDX, SEM, UV-Visible spectroscopy and nanoindentation tests were used for film characterization. FT-IR analysis showed that temperature increase lead to the transition from a low-temperature polymeric-like films to the high-temperature inorganic material. It was also shown that the high-temperature films content predominantly Si-C bonds independently on the additional gas type. As it was confirmed by Raman spectroscopy, high- temperature SiCxNy films content carbon phase. Ammonia addition into the reaction mixture resulted in the shift of the temperature boundary of carbon phase-free region. The transmittance of SiCxNy.films obtained using BTMSEA + He mixture in the deposition temperature range of 100-500 oC was 85-95% and decreased significantly in the case of carbon phase formation at Tdep more than 500 oC. Optical band gap estimated from UV-Vis spectra varied in the range of 1.9-4.4 eV depending on the deposition temperature. NH3 addition to initial mixture led to the film transmittance decrease to 80-90%, the optical band gap changed in the range of 2.0-5.1 eV. Nanoindentation tests showed that hardness of the films synthesized at high temperature was 18.5-21.5 GPa.

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