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inquiryHenan Wentao Chemical Product Co.,Ltd is Located in Zhengzhou High-tech Development Zone with import and export license, We passed ISO 9001:2008 as well, Henan Wentao has developed more than 1000 compounds, which are widely used in the fields of prod
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inquiryhigh purity lowest priceAppearance:solid or liquid Storage:in sealed air resistant place Package:Foil bag; Drum; Plastic bottle Application:Pharma;Industry;Agricultural Transportation:by sea or air Port:Beijing or Guangzhou
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inquiry1.Professional synthesis laboratory and production base. 2.Strong synthesis team and service team. 3.Professional data management system. 4.We provide the professional test date and product information ,ex. HNMR ,CNMR,FNMR, HPLC/G
Cas:125542-03-2
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inquiryFINETECH INDUSTRY LIMITED is a LONDON based CRO company providing drug discovery & development services to worldwide clients. FINETECH INDUSTRY LIMITED supplies the CHLORODIMETHYL(2,3,4,5-TETRAMETHYL-2,4-CYCLOPENTADIEN-1-YL)SILANE, CAS:125542-03-2 wi
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inquiryDebyesci is here who supplied several kinds of chemical products to global pharmaceutical, drug discovery, agrochemical and biotechnology industries for four yearsOur key scientific leadership team has gained experience in top research and developmen
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Cas:125542-03-2
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inquirylithium 1,2,3,4-tetramethylcyclopentadienide
dimethylsilicon dichloride
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
In tetrahydrofuran at -30 - 20℃; Inert atmosphere; | 88% |
1,2,3,4-tetramethylcyclopenta-1,3-diene
dimethylsilicon dichloride
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
Stage #1: 1,2,3,4-tetramethylcyclopenta-1,3-diene With n-butyllithium In diethyl ether; hexane Stage #2: dimethylsilicon dichloride In tetrahydrofuran | 83% |
Stage #1: 1,2,3,4-tetramethylcyclopenta-1,3-diene With n-butyllithium In tetrahydrofuran at -78 - 20℃; Schlenk technique; Stage #2: dimethylsilicon dichloride In tetrahydrofuran; hexane at 20℃; Schlenk technique; | 83% |
Stage #1: 1,2,3,4-tetramethylcyclopenta-1,3-diene With n-butyllithium In tetrahydrofuran at -78 - 20℃; Schlenk technique; Stage #2: dimethylsilicon dichloride In tetrahydrofuran; hexane at -78 - 20℃; Schlenk technique; | 83% |
dimethylsilicon dichloride
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
In tetrahydrofuran for 16h; |
2,3,4,5-tetramethyl-2-cyclopenten-1-one
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
Multi-step reaction with 2 steps 1.1: lithium aluminium hydride / diethyl ether / 2 h 1.2: 37 percent / hydrochloric acid; air / diethyl ether; H2O / 16 h 2.1: n-butyllithium / petroleum ether / 16 h / 0 - 20 °C 2.2: 67 percent / petroleum ether; tetrahydrofuran / 16 h View Scheme |
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
In tetrahydrofuran at -25 - 20℃; Inert atmosphere; Glovebox; | 98.9% |
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
In tetrahydrofuran at 20℃; for 6h; | 98% |
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
C5(CH3)4HSi(CH3)2NCN2(CH(CH3)2)2C2(CH3)2
Conditions | Yield |
---|---|
In hexane at 20℃; for 1.5h; | 98% |
1-n-butyl-3H-indene
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
Stage #1: 1-n-butyl-3H-indene With n-butyllithium In tetrahydrofuran at -78 - 20℃; for 2.5h; Schlenk technique; Stage #2: 1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene In tetrahydrofuran at -78 - 20℃; Schlenk technique; | 98% |
2-thiazolylamine
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
(C5Me4H)SiMe2NH-2-thiazole
Conditions | Yield |
---|---|
With triethylamine In tetrahydrofuran at 20℃; for 3h; | 97% |
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
In tetrahydrofuran at 20℃; for 18h; | 96% |
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
1-[dimethyl-(2,3,4,5-tetramethyl-cyclopenta-2,4-dienyl)-silanyl]-4,7-diisopropyl-[1,4,7]triazonane
Conditions | Yield |
---|---|
In tetrahydrofuran at -78 - 20℃; | 96% |
lithium 2,4,6-trimethylaniline
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
(CH3)2Si(C5(CH3)4H)NHC6H2(CH3)3
Conditions | Yield |
---|---|
In tetrahydrofuran at 20℃; for 12h; | 96% |
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
In tetrahydrofuran at -100 - 20℃; Inert atmosphere; | 96% |
2-(2-methoxyethoxy)ethyl alcohol
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
[2-(2-Methoxy-ethoxy)-ethoxy]-dimethyl-(2,3,4,5-tetramethyl-cyclopenta-2,4-dienyl)-silane
Conditions | Yield |
---|---|
With pyridine In diethyl ether Ambient temperature; | 95% |
pyrrolidine
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
C15H27NSi
Conditions | Yield |
---|---|
Stage #1: pyrrolidine With n-butyllithium In tetrahydrofuran at 20℃; Inert atmosphere; Stage #2: 1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene In tetrahydrofuran at 20℃; for 24h; Inert atmosphere; | 95% |
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
Stage #1: 4-(4-(tert-butyl)phenyl)-2-methyl-1H-indene With n-butyllithium In tetrahydrofuran; hexane; toluene at -10 - 20℃; for 12h; Stage #2: 1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene In tetrahydrofuran; hexane; toluene at -10 - 20℃; for 12h; | 95% |
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
In tetrahydrofuran at 20℃; for 18h; | 94% |
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
2-phenyl-2-propylamine
C5Me4HSiMe2N(H)CMe2Ph
Conditions | Yield |
---|---|
Stage #1: 2-phenyl-2-propylamine With n-butyllithium In tetrahydrofuran Inert atmosphere; Stage #2: 1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene In tetrahydrofuran at -78℃; Inert atmosphere; | 94% |
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
In tetrahydrofuran for 24h; Schlenk technique; Glovebox; Inert atmosphere; | 93% |
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
C25H40Si
Conditions | Yield |
---|---|
In tetrahydrofuran at -78 - 20℃; | 92% |
2-[2-(1H-inden-1-yl)ethyl]-1,3-dioxane
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
C26H36O2Si
Conditions | Yield |
---|---|
With n-butyllithium In diethyl ether; hexane at -78 - 20℃; for 20.25h; Inert atmosphere; Schlenk technique; | 91% |
Stage #1: 2-[2-(1H-inden-1-yl)ethyl]-1,3-dioxane With n-butyllithium In diethyl ether; hexane at 20℃; for 4h; Stage #2: 1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene In diethyl ether; hexane at 20℃; for 15h; Further stages.; | 60% |
tert.-butyl lithium
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
In tetrahydrofuran; pentane 1.) -78 deg C, 1 h, 2.) r.t., 2 h; | 90% |
n-butyllithium
1,2-dicarba-closo-dodecaborane(12)
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Me2Si(C5Me4H)(o-carboranyl)
Conditions | Yield |
---|---|
With NH4Cl In diethyl ether; hexane; benzene 2 equiv. of n-BuLi in hexane was added to soln. of o-carborane in C6H6/Et2O (2:1) at 0 °C under N2, mixt. was warmed to room temp. and stirred for 2 h, Si-compd. was added, mixt. was refluxed overnight, satd. aq. soln. of NH4Cl was added; aq. layer was extd. with Et2O, ext. was combined with org. layer and dried over MgSO4, soln. was filtered, solvent was removed, residue was chromd. on silica with n-hexane; | 90% |
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
In tetrahydrofuran at -78 - 20℃; | 88% |
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
Stage #1: C15H18BN2(1-)*Li(1+); 1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene In tetrahydrofuran at -30 - 20℃; Inert atmosphere; Stage #2: In tetrahydrofuran at -30 - 20℃; | 88% |
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
In hexane at 20℃; for 14h; Alkylation; | 86% |
triethylene glucol monomethyl ether
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
{2-[2-(2-Methoxy-ethoxy)-ethoxy]-ethoxy}-dimethyl-(2,3,4,5-tetramethyl-cyclopenta-2,4-dienyl)-silane
Conditions | Yield |
---|---|
With pyridine In diethyl ether Ambient temperature; | 85% |
lithium benzylamide
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
In hexane 1) -78 deg C, 2) r.t., 14 h; | 84% |
2-aminopyridine
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
(C5Me4H)SiMe2NH-2-pyridine
Conditions | Yield |
---|---|
With triethylamine In tetrahydrofuran at 20℃; for 3h; | 84% |
3-biphenyl amine
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
N-(biphenyl-3-yl)-1,1-dimethyl-1-(2,3,4,5-tetramethylcyclopenta-2,4-dienyl)silylamine
Conditions | Yield |
---|---|
Stage #1: 3-biphenyl amine With n-butyllithium In diethyl ether; hexane at -40 - 20℃; for 1h; Inert atmosphere; Stage #2: 1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene In diethyl ether; hexane at -40 - 20℃; for 8h; | 84% |
1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene
Conditions | Yield |
---|---|
In tetrahydrofuran for 12h; | 83% |
Conditions | Yield |
---|---|
Stage #1: C17H16O With n-butyllithium In tetrahydrofuran; hexane at -78 - 20℃; for 2h; Inert atmosphere; Stage #2: 1-(chlorodimethylsilyl)-2,3,4,5-tetramethylcyclopenta-2,4-diene With 1,3-dimethyl-2-imidazolidinone In tetrahydrofuran; hexane at -20 - 20℃; for 16h; Inert atmosphere; | 83% |
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