5624-64-6Relevant articles and documents
Varma
, p. 9 (1970)
Reaction of Hydrogen Peroxide with Organosilanes under Chemical Vapour Deposition Conditions
Moore, Darren L.,Taylor, Mark P.,Timms, Peter L.
, p. 2673 - 2678 (2007/10/03)
When a stream of vapour at low pressure which contained a mixture of H2O2 with an organosilane, RSiH3 (R = alkyl or alkenyl), impinged on a silicon wafer, deposition of oxide films of nominal composition RxSiO(2-0.5x), where x 3 or higher alkenyl groups. or higher alkenylgroups. Possible mechanism for the Si-C bond cleavage reaction are discussed, with energetic rearrangement of radical intermediates of type Si(H)(R)(OOH)' being favoured.
Germyl chemistry. V. Hexamethylphosphoramide as a solvent for the preparation and reaction of alkali metal derivatives of silane and germane
Cradock,Gibbon,Van Dyke
, p. 1751 - 1752 (2007/10/12)
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