HangZhou Kai Yada 99.999% Cadmium Telluride (CdTe)

Details:

Leshan Kai Yada Photoelectric Technology Co.,Ltd.,founded in 2003 September, is a professional R & D, production, processing and sales of compound semiconductor materials, optoelectronic materials of private enterprise, located in Leshan high tech zone.2006 was identified as high-tech enterprises,the same year the development of indium antimonide single crystal won the Science and technology progress award.

For 13 years,The Company specializes in the production and purification of minor metals such as Tellurium,Antimony ,indium,selenium and Bismuth as well as inorganic chemicals based on such metals and compound semiconductor:

High-Purity metals(4N-7N):

Tellurium(Te)for CdTe thin-film solar cells,CZT single crystal and other alloy;

Antimony(Sb)for InSb&GaSb single crystal,Sb2O3 and other alloy;

Oxygen-Free Selenium(Se)for far infrared optical glass and CIGS&CIS thin-film solar cells;

Bismuth(Bi)for high-purity Bi2O3…

Indium(In)for InSb,InP,InN single crystal and CIGS&CIS thin-film solar cells;

High-Purity Compounds(4N-6N):

P/N type Bismuth(III)Telluride(Bi2Te3)for thermoelectric & refrigerant devices;

Indium Antimonide single crystal(InSb)for Magnetic Resistance;

5N Bismuth Oxide(Bi2O3)for BGO Single crystal;

Cadmium Selenide(CdSe)for near infrared optical glass…

Cadmium Sulfide(CdS)for thin-film solar cells and optical glass;

Cadmium Telluride(CdTe)for CdTe thin-film solar cells,CZT single crystal;

Tellurium Dioxide(TeO2)for paste,tellurite glass,brightener and TeO2 singal crystal ;

Lead Telluride(PbTe)for optical Coating.

Gallium Arsenide(GaAs);Gallium Trisulfide(Ga2S3);Indium(III)Selenide(In2Se3);Indium Telluride(InTe);Zinc Oxide(ZnO);Zinc Telluride(ZnTe);Indium(I)Chloride(InCl);Indium Chloride(InCl3);Indium Oxide(In2O3);Gallium Oxide(Ga2O3);Bismuth(III)Selenide(Bi2Se3);Germanium Disulfide(GeS2)

Cadmium Telluride (CdTe)

1,Purity : 5N(99.999%);

2,Process :THM for CSS,VTD process to produce CdTe thin-film ;

3,Analysis :ICP-MS or GDMS (All impurity elements is below 10ppm;）;LPSA;XRD;

4,Particle Size :Powder:-120mesh/+60Mesh;Granule:1-6mm;(or customize),Tabelt;

5,Service :Supply MSDS; Free sample; Solutions for material application;

6,Packing :Vacuum packing or Argon shield;

7,Application: CdTe thin-film solar cells ;CZT; HgxCd1-xTe;

8,Payment term : T/T 30days after customer approval;

9,Physical character:

Molecular mass: 240.01

Band gap: 1.44 eV

Refractive index: 2.57

Density: ρ=5.85 g·cm⁻³

Melting Point: 1092℃ 

Boiling Point: 1130℃;

10, Specification:

Cadmium telluride:

CdTe-05 Grade 99.999. The content of Cadmium Telluride is above 99.999%. The total content of Ag, Al, As, Bi, Cu, Fe, Mg, Ni, Pb, Se, Si & Zn is bellow 10 ppm; 

CdTe-06 Grade 99.9999. The content of Cadmium Telluride is above 99.9999%. The total content of Ag, Al, As, Bi, Cu, Fe, Mg, Ni, Pb, Se, Si & Zn is bellow 1ppm; 

3, Physical Size:

Lump, Powder.

4, Usage:

It is mainly used in the manufacture of solar cells, infrared modulators, HgxCd1-xTe underlay, infrared electroluminescence electric eye, infrared detectors, X-ray detectors, nuclear radio activity detectors, approach visible light radiation etc.