Add time:07/23/2019         Source:sciencedirect.com

The diffusion of manganese into gallium arsenide has been studied as a function of temperature and arsenic pressure by means of a radioactive tracer method. In some cases, anomalous diffusion profiles have been obtained that are best fit by two overlapping complementary error functions. Diffusion coefficients at 900°C, as calculated from both branches of the anomalous profiles, are found to vary with the negative square root of the total arsenic pressure. An analysis is presented that suggests that manganese diffuses by jumps involving a defect pair. The average activation energy of 2.49 eV found for manganese diffusion in gallium arsenide under 8.50 × 10−3 atm arsenic compares favorably with published values for diffusion of zinc and cadmium in this compound.

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