Add time:07/31/2019         Source:sciencedirect.com

Silicon-poor tantalum silicide films cosputtered on polycrystalline silicon over thermal oxide on silicon were rapidly annealed for various temperatures and times using a graphite strip heater. Rutherford backscattering and X-ray diffraction showed rapid formation of a stoichiometric tantalum disilicide via Si diffusion from the polycrystalline Si. This was accompanied by significant grain growth and a reduction in resistivity. Sheet resistances comparable with those of furnace annealed samples were obtained.

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