Add time:08/01/2019         Source:sciencedirect.com

TaSi2GaAs diodes were studied at different rates of deposition of TANTALUM SILICIDE (cas 12039-79-1). A minimum ideality factor of 1.03 was observed at a deposition rate of 4 Å s−1. At this rate the barrier height was determined to be 0.72 eV using the experimental value of the Richardson constant of 2 A cm−2 K−2. High temperature annealing of the contacts was performed in a heat pulse unit using the proximity technique. This technique eliminates the need for encapsulation of the semicondutor. The stability achieved by annealing at temperatures up to 900°C was excellent. An ideality factor of 1.08 and a barrier height of 0.70 eV were observed after annealing at 900°C for 10 s. The sputter etching did not change the electrical characteristics of contacts.

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