Add time:08/03/2019         Source:sciencedirect.com

Silicon–germanium alloy layers will be employed in the source–drain engineering of future MOS transistors. The use of this technology offers advantages in reducing series resistance and decreasing junction depth resulting in reduction in punch-through and SCE problems. The contact resistance of metal or metal silicides to the raised source–drain material is a serious issue at sub-micron dimensions and must be minimised. In this work, TUNGSTEN SILICIDE (cas 12039-88-2) produced by chemical vapour deposition has been investigated as a contact metallization scheme to both boron and phosphorus doped polycrystalline Si1−xGex, with 0 ≤ x ≤ 0.3. Cross bridge Kelvin resistor (CKBR) structures were fabricated incorporating CVD WSi2 and polycrystalline SiGe. Tungsten silicide contacts to control polysilicon CKBR structures have been shown to be of high quality with specific contact resistance ρc values 3 × 10−7 ohm cm2 and 6 × 10−7 ohm cm2 obtained to boron and phosphorus implanted samples respectively. The SiGe CKBR structures show that the inclusion of Ge yields a reduction in ρc for both dopant types. The boron doped SiGe exhibits a reduction in ρc from 3 × 10−7 to 5 × 10−8 ohm cm2 as Ge fraction is increased from 0 to 0.3. The reduction in ρc has been shown to be due to (i) the lowering of the tungsten silicide Schottky barrier height to p-type SiGe resulting from the energy band gap reduction, and (ii) increased activation of the implanted boron with increased Ge fraction. The phosphorus implanted samples show less sensitivity of ρc to Ge fraction with a lowest value in this work of 3 × 10−7 ohm cm2 for a Ge fraction of 0.3. The reduction in specific contact resistance to the phosphorus implanted samples has been shown to be due to increased dopant activation alone.

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