Add time:07/29/2019         Source:sciencedirect.com

This work reports a novel method for improving the electrical properties of lanthanum gate oxide (La2O3) by using aluminum doping and rapid thermal annealing (RTA) techniques. In the bulk of the Al-doped La2O3 film together with 600 °C RTA, we found that the aluminum atoms were incorporated into the oxide network and the film was transformed into lanthanum aluminate complex oxide. At the interface, a thin Al2O3 layer was formed. This interfacial Al2O3 layer suppressed the out-diffusion of substrate Si, the formation of interfacial silicate layer and silicide bonds. These effects resulted in a significant reduction on the bulk and interface trap densities and hence the gate leakage current.

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