Add time:08/11/2019         Source:sciencedirect.com

The nitrogen-doped, n-type 4H-SiC with 6 μm thick epitaxial layer was irradiated at the perpendicular incidence and room temperature by 167 MeV Xe+26 ions to a fluence of 5 × 1012 cm−2. The Monte Carlo simulation code, Stopping and Range of Ions in Matter (SRIM) was used to simulate the Xe26+ ions irradiated in SiC. The Rutherford backscattering spectrometry (RBS) analysis with 3.5 MeV He++ ions which have a projected range of ~9 μm in SiC (SRIM prediction) did not detect implanted Xe. Raman spectroscopy and imaging depth profiles clearly showed three distinct parts of the swift heavy ion (SHI)-irradiated 4H-SiC, i.e. 5.6 μm irradiated epitaxial layer, 6.9 μm damaged irradiated layer and non-irradiated 4H-SiC bulk. Raman spectroscopy showed new broad bands of crystalline SiSi and distorted SiC in the damaged irradiated layer. The new SiSi bands were attributed to the ordering in the SiSi homonuclear bonds without crystal amorphization. The scanning near-field optical microscopy (SNOM) results of the SHI-irradiated 4H-SiC sample displayed a very low signal counts (transmission) compared to the virgin sample, and this difference in the optical absorption could be correlated with the defects energy levels created within the bandgap of the sample upon irradiation.

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