Lithium–lead–germanate glasses in the xLi2O·(100-x)[7GeO2·3PbO] system, where 0 ≤ x ≤ 40 mol% Li2CO3 exhibit a “germanate anomaly”, which is a maximum in their density profiles with the addition of Li2CO3 up to 20 mol%. The structural characterization of the samples was performed by inve...

Oxyfluoride lead-based and lead-free germanate glasses were heat-treated in order to fabricate transparent glass-ceramics. Cubic β-PbF2 nanocrystals are well formed during crystallization of lead germanate glass. The up-conversion luminescence spectra of Er3+ ions in lead germanate glass-cerami...

Vanadium doped lead germanate glasses were synthesized by melt quenching technique. The samples were characterised by XRD and DSC patterns. Optical absorption and ESR studies of the samples indicated that a considerable proportion of vanadyl ions exist in V4+ and V5+states due to substitution of...

The present investigation explores the adaptability of the lead-germanate network with the Ag2O content in the system with xAg2O·(100-x)[7GeO2·3PbO2] composition where x = 0–40mol% Ag2O. All obtained glasses have amorphous structure. The existence of crystallite particles with different morph...

We have investigated the electronic band structure for a series of europium–palladium-based hydrides. we have computed the energy bands, total and partial density of states of these compounds, by means of the full-potential linearized augmented plane waves method. We found these hydrides to be ...

The substitution of europium atoms for other rare-earth metals in Ce5Ge3, Pr5Ge3, Gd5Ge3 and Gd5Si3 was studied. Results show that a maximum of one europium atom can be substituted in the above compounds without destroying their crystal structure. Crystal and Gd155 Mössbauer measurements were us...

The thickness-dependent electronic structures of Dy silicide films grown on a Si(1 1 1) surface have been investigated by angle-resolved photoelectron spectroscopy. Two (1×1) periodic bands, both of them cross the Fermi level, have been observed in the silicide films formed by Dy coverages of 1...

Migration behaviour of Europium (Eu) implanted into 6H-SiC was investigated using Rutherford backscattering spectroscopy (RBS), RBS in a channelling mode (RBS-C) and scanning electron microscopy (SEM). Eu ions of 360 keV were implanted into 6H-SiC at 600 °C to a fluence of 1 × 1016 cm−2. The i...

The novel binary europium silicide Eu3Si4 was synthesized from the elements. Its crystal structure is a derivative of the Ta3B4 type: space group Immm, a=4.6164(4) Å, b=3.9583(3) Å, c=18.229(1) Å, Z=2. In the structure, the silicon atoms form one-dimensional bands of condensed hexagons. Deviatin...

EuCo2Si2 intermetallic compound was synthesised and characterised by X-ray powder diffraction, electric resistivity, magnetic susceptibility and X-ray photoelectron spectroscopy. No sign of magnetic ordering could be depicted from the temperature dependence of electrical resistivity, whereas two...

X-ray diffraction studies of EuM2X2 compounds (M = Fe, Co, Ni, Cu; X = Si, Ge) revealed that these compounds crystallize in the ThCr2Si2 type body-centered tetragonal structure, with the space group I4mmm. Distribution of the atoms among the lattice sites, the free parameter of the Si and Ge ato...

Erbium silicide layers were grown epitaxially on (100) Si. Electron microscopy results showed that ErSi2−x layers grow on (100) Si with hexagonal and tetragonal crystalline structures, depending on the method of deposition, the substrate temperature and their stoichiometry. Electrical resistivit...

We present a computational method for the ab-initio study of the optical and magnetic properties using the augmented plane wave plus local orbitals (APW+lo) method. The calculations are presented within the local density (LDA) approximation. Erbium silicide (ErSi2) is representative of the whole...

Hydrogen desorption from two-dimensional (2D) and bulk-like (3D) erbium silicides on Si(111) has been investigated by means of thermal desorption spectroscopy (TDS) and high resolution electron energy loss spectroscopy (HREELS). By TDS, hydrogen is found to desorb as a single feature with a maxi...

Erbium-silicide (ErSi1.7) is formed on silicon-on-insulator (SOI) by using a rapid thermal annealing (RTA) technique. Annealing temperature and time are 500 °C and 5 min, respectively. The formation of ErSi1.7 phase is confirmed by X-ray diffraction and Auger electron spectroscopy analysis. Als...

Erbium films of 0.5, 2 and 6 nm thickness were evaporated in UHV onto Si(0 0 1) substrates, annealed and characterized in situ by reflected high-energy-electron diffraction (RHEED). The RHEED pattern was streaky for ErSi2−x films at all thicknesses were formed at 400 °C. A heat treatment of the...

Erbium silicide layers were grown epitaxially on Ge+ ion implanted Si. Epitaxy of ErSi2−x layers was achieved at a temperature of 750 °C. The layers are grown in the tetragonal phase. The growth of the silicide layers resulted in a drastic decrease of the dislocations in the SiGe layer accompan...

10 and 6 nm erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 10 nm n-type SB-MOSFET showed a large on/off current ratio (> 106) with low leakage current less than 10− 5 μA/μm due to the existence of the...

During the growth of erbium silicide on a Si (1 0 0) substrate the exceptional growth of a trapezoid inclusion in the substrate was observed by electron microscopy. It is found that in the inclusion a strained hexagonal silicide was grown, although the silicide overlayer grows with the tetragona...

The Schottky barrier heights for electrons and holes of erbium-silicided Schottky diodes were extracted from the current–voltage-temperature characteristics in reverse bias condition. The effective barrier heights increased with temperature. The highest effective barrier heights for electrons a...