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inquiryConditions | Yield |
---|---|
With aluminum tri-bromide In benzene byproducts: PhH; 12 h, room temp.; 5-6 h, 70°C; distn.; | 99.4% |
silicon
A
Diphenyldibromsilan
B
phenyltribromosilane
C
tetrabromosilane
Conditions | Yield |
---|---|
With C6H5Br; copper In neat (no solvent) Si-Cu (8:2) and C6H5Br at about 420°C;; | A 27% B 42% C 13% |
tetrachlorosilane
hexabromobenzene
A
tetrabromosilane
B
dibromo dichlorosilane
C
bromo trichloro silane
D
chloro tribromo silane
Conditions | Yield |
---|---|
In gas High Pressure; reagents added to tube in dry ice bath, sealed in amts. to develop about 30-50 atm of pressure at 300°C, heated at 310-350°C for 1.5-69 h; analyzed by GLC; |
Conditions | Yield |
---|---|
above m.p. of AgBr in vac.; |
hydrogen bromide
silicon
A
tribromosilane
B
tetrabromosilane
Conditions | Yield |
---|---|
340-360 °C; | |
340-360 °C; | |
In neat (no solvent) moderate heating of Si in a dry HBr stream;; | |
In neat (no solvent) heating of Si in a HBr stream below red heat;; fractional distillation;; |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: Si2OBr6, bromine, carbon monoxide; >1000 K; |
bromo trichloro silane
A
tetrachlorosilane
B
tetrabromosilane
Conditions | Yield |
---|---|
In neat (no solvent) passing SiBrCl3 through a tube, heated at 600 °C;; | |
In neat (no solvent) passing SiBrCl3 through a tube, heated at 600 °C;; |
bromo trichloro silane
chloro tribromo silane
A
tetrachlorosilane
B
tetrabromosilane
Conditions | Yield |
---|---|
In neat (no solvent) passing a mixture of SiBrCl3 and SiBr3Cl through a tube, heated at 600 °C;; | |
In neat (no solvent) passing a mixture of SiBrCl3 and SiBr3Cl through a tube, heated at 600 °C;; |
difluorosilylene
bromine
silicon tetrafluoride
A
bromotrifluorosilane
B
difluoro dibromosilane
C
fluoro tribromosilane
D
disilicon hexabromide
E
tetrabromosilane
Conditions | Yield |
---|---|
In neat (no solvent) The halogen was co-condensed in a flask at -196°C with the mixt. of SiF4 and SiF2 emerging out of the reactor tube; further products;; warmed to room temp.; the volatile products were sepd. and detected by NMR and MS;; |
Conditions | Yield |
---|---|
In neat (no solvent) passing of a N2 stream with Br2 vapor over crystalline Si which is heated at 1000°C;; removal of Br2 by heating and shaking with Hg;; | >99 |
In neat (no solvent) passing of a N2 stream with Br2 vapor over crystalline Si which is heated at 1000°C;; removal of Br2 by heating and shaking with Hg;; | >99 |
In neat (no solvent) removal of Br2 by shaking with Hg; purification by fractional distillation;; | |
Inert atmosphere; |
bromine
chlorine
silicon
A
tetrabromosilane
B
dibromo dichlorosilane
C
bromo trichloro silane
D
chloro tribromo silane
Conditions | Yield |
---|---|
In neat (no solvent) passing a mixture of Cl2 and Br2 over metallic Si at 700°C;; fractional distillation;; |
bromine
silicon tetraiodide
A
tribromo iodosilane
B
tetrabromosilane
Conditions | Yield |
---|---|
In carbon disulfide | |
In neat (no solvent) | |
In carbon disulfide |
bromine
monosilane
A
tribromosilane
B
silyl bromide
C
dibromosilane
D
hydrogen bromide
E
tetrabromosilane
Conditions | Yield |
---|---|
In neat (no solvent) reaction of Br2 and excess SiH4; cooling;; fractionation;; | |
In neat (no solvent) reaction of Br2 and excess SiH4; cooling;; fractionation;; |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: HBr; heating of ferrosilicon with 25% Fe in a N2 stream with Br2 vapor in a porcelaine tube at 800-850°C;; removal of Br2 by shaking with Hg; isolation by fractional distillation and condensation in vacuum;; |
bromine
silica gel
A
tetrabromosilane
B
chloro tribromo silane
Conditions | Yield |
---|---|
With C In neat (no solvent) treatment of a mixture of SiO2 and C with crude Br2 at higher temp.;; fractionation;; |
Conditions | Yield |
---|---|
With oil; Sucrose In neat (no solvent) passing of Br2 vapor over the mixture at glowing heat;; removal of Br2 by shaking with Hg; purification by distillation;; | |
With carbon monoxide In neat (no solvent) byproducts: carbon dioxide; addn. of SiO2, CO (22-28 kP) and Br2 (27-40 kP) into ampoule, reactn. at 837 K (24 h); detn. of SiBr4 after heating the evacuated ampoule at >1173 K; | |
With carbon monoxide In neat (no solvent) byproducts: carbon dioxide; addn. of SiO2, CO (22-28 kP) and Br2 (27-40 kP) into ampoule, reactn. at >1173 K (24 h); no detn. of COBr2 in vapour phase; | |
With C In neat (no solvent) passing of Br2 vapor over the mixture at glowing heat;; removal of Br2 by passing H2 through the crude bromide on heating; shaking with Hg and fractional distillation;; | |
With soot; sugar; oil In neat (no solvent) passing of Br2 vapor over the mixture at glowing heat;; removal of Br2 by shaking with Hg; purification by distillation;; |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: H2; decompn. above 700 °C;; | |
In neat (no solvent) byproducts: H2; decompn. above 700 °C;; |
Conditions | Yield |
---|---|
In neat (no solvent) | |
In neat (no solvent) |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: BeO; reaction of BeBr2 with quartz glass at high temp.;; |
hydrogen bromide
silicon
A
tribromosilane
B
silyl bromide
C
dibromosilane
D
tetrabromosilane
Conditions | Yield |
---|---|
In neat (no solvent) | |
In neat (no solvent) reaction of crystalline Si with gaseous HBr at 340-700 °C; yields depend on the reaction temperature;; | A n/a B <1 C n/a D n/a |
In neat (no solvent) | |
In neat (no solvent) reaction of crystalline Si with gaseous HBr at 340-700 °C; yields depend on the reaction temperature;; | A n/a B <1 C n/a D n/a |
hydrogen bromide
silicon
A
silicon tribromide
B
tetrabromosilane
Conditions | Yield |
---|---|
In neat (no solvent) reaction at temperatures between 340 und 360 °C;; | |
In neat (no solvent) reaction at temperatures between 340 und 360 °C;; | |
In neat (no solvent) reaction at temperatures between 340 und 360 °C;; |
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