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Items Standard Result Appearance gray powder Complies Particle size 1.58um Complies
Cas:7440-21-3
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Product Detail Minimum Order Qty. 10 Gram
Cas:7440-21-3
Min.Order:10 Gram
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inquirySilicon CAS: 7440-21-3 Superiority mp 1410 °c(lit.) bp 2355 °c(lit.) density 2.33 g/ml at 25 °c(lit.) storage temp. flammables area form powder water solubility ins
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A substitute for perfluorooctanoic acid, mainly used as a surfactant, dispersant, additive, etc Appearance:White solid or Colorless liquid Purity:99.3 % We will ship the goods in a timely manner as required We can provide relevant documents acc
Zibo Hangyu Biotechnology Development Co., Ltd is a leading manufacturer and supplier of chemicals in China. We develop produce and distribute high quality pharmaceuticals, intermediates, special chemicals and OLED intermediates and other fine chemi
Cas:7440-21-3
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inquirySiliconAppearance:solid or liquid Storage:in sealed air resistant place Package:drum and bag Application:for pharma use Transportation:by sea or air
high purity lowest priceAppearance:solid or liquid Storage:in sealed air resistant place Package:drum and bag Application:for pharma use Transportation:by sea or air Port:Beijing or Guangzhou
Product Description Description & Specification Category Pharmaceutical Raw Materials, Fine Chemicals, Bulk drug Standard Medical standard
Cas:7440-21-3
Min.Order:1 Kilogram
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silicon atom/silicon powder/Nano-grade silicon atom 7440-21-3 Application:silicon atom/silicon powder/Nano-grade silicon atom 7440-21-3
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silicon atom/silicon powder/Nano-grade silicon atom 7440-21-3Appearance:gray powder Storage:Normal temperature, sealed, cool, ventilated and dry environment Package:according to the clients requirement Application:Metal powder Transportation:By expre
Cas:7440-21-3
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inquiryin stock Application:7440-21-3
Cas:7440-21-3
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inquiry1.Professional synthesis laboratory and production base. 2.Strong synthesis team and service team. 3.Professional data management system. 4.We provide the professional test date and product information ,ex. HNMR ,CNMR,FNMR, HPLC/G
Cas:7440-21-3
Min.Order:10 Milligram
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Cas:7440-21-3
Min.Order:1 Kilogram
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inquiryDescription Silicon Metal processed by excellent industrial silicon and including full varieties. Used in electro, metallurgy and chemical industry. It is silver gray or dark gray powder with metallic luster, which be of high melting point,
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Min.Order:1 Metric Ton
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Min.Order:5 Kilogram
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inquiryProduct Description This product is grinded from silicon metal blocks and are gray-colored and have metallic luster. It is widely used in refractory materials, basic raw materials of silicone, integrated circuit components, powder metallurgy,
Cas:7440-21-3
Min.Order:10 Metric Ton
FOB Price: $1480.0 / 1500.0
Type:Manufacturers
inquiryConditions | Yield |
---|---|
Prepd. by laser chemical vapor pptn. at atmospheric pressure.; | 100% |
In neat (no solvent) chemical vapor deposition with a mixt. of SiH2Cl2 and H2; | |
With hydrogen chemical vapor deposition (hot-wall reactor, basic pressure 10 or 76 Torr, 1223 K); |
trichlorosilane
silicon
Conditions | Yield |
---|---|
Stage #1: trichlorosilane under 3.75038 Torr; for 6h; Pulsed microwave radiation (25-50W); Stage #2: With hydrogen at 900℃; | 96.7% |
With hydrogen chemical vapor deposition (8% SiHCl3 in H2, 1100°C); | |
With hydrogen chemical vapor deposition (hot-wall reactor, basic pressure 10 or 76 Torr, 1223 K); |
silica gel
silicon
Conditions | Yield |
---|---|
With magnesium oxide; magnesium In neat (no solvent) mixt. of 180 parts SiO2, 144 parts Mg and 81 parts MgO, covered with a layer of Mg in a warmed up crucible, heating at red heat in a electric furnace, begin of the react. after 2-3 min. with strong glowing, best yields with a SiO2 grainsize of 0.14mm;; treatment of the reactionproduct with HCl, H2SO4 and HF one after another, Si powder of 99.09-99.60% purity;; | 92.7% |
With Mg; MgO In neat (no solvent) mixt. of 180 parts SiO2, 144 parts Mg and 81 parts MgO, covered with a layer of Mg in a warmed up crucible, heating at red heat in a electric furnace, begin of the react. after 2-3 min. with strong glowing, best yields with a SiO2 grainsize of 0.14mm;; treatment of the reactionproduct with HCl, H2SO4 and HF one after another, Si powder of 99.09-99.60% purity;; | 92.7% |
With magnesium Inert atmosphere; Schlenk technique; | 46.7% |
tetrachlorosilane
silicon
Conditions | Yield |
---|---|
With hydrogen at 700℃; under 15.0015 Torr; Product distribution / selectivity; Microwave radiation (200W); | 60% |
Product distribution / selectivity; | |
With KBr or KI In neat (no solvent) byproducts: KCl, Br; uncomplete reaction of SiCl4 with KBr or KI at 300-400 °C;; |
Conditions | Yield |
---|---|
With H2 In neat (no solvent) chemical vapour deposition of CH4 (4.0 mol%), H2 and SiH4 (2.0 mol%) gases in reaction-sintered SiC tube within mullite tube in resistance furnace, total gas flow rate 2.7E-5 m**3/sec, total gas pressure 0.1 MPa, 1623K; transmission electron microscopy, pycnometry, IR spectroscopy, X-ray diffractometry; | A 23% B n/a |
With H2 In neat (no solvent) chemical vapour deposition of CH4 (7.2 mol%), H2 and SiH4 (3.6 mol%) gases in reaction-sintered SiC tube within mullite tube in resistance furnace, total gas flow rate 2.7E-5 m**3/sec, total gas pressure 0.1 MPa, 1623K; transmission electron microscopy, pycnometry, IR spectroscopy, X-ray diffractometry; | A 19% B n/a |
With H2 In neat (no solvent) chemical vapour deposition of CH4 (4.0 mol%), H2 and SiH4 (2.0 mol%) gases in reaction-sintered SiC tube within mullite tube in resistance furnace, total gas flow rate 2.7E-5 m**3/sec, total gas pressure 0.1 MPa, 1573K; transmission electron microscopy, pycnometry, IR spectroscopy, X-ray diffractometry; | A 14% B n/a |
Conditions | Yield |
---|---|
at 200℃; under 116262 Torr; for 10h; Temperature; Autoclave; | A n/a B n/a C n/a D n/a E 10% |
Conditions | Yield |
---|---|
In gaseous matrix byproducts: H2; other Radiation; photolysis of pure SiH4 or a 37% mixture with N2 or Ar or H2 or He (total pressure = 80 Torr) in stainless steel cell by cw CO2 laser (945.98 cm**-1=IR), strong luminescence accompanies the react.; traces of higher silanes (gases) and solid hydrogenated silicon also present, H2 or He inhibit the react.; | A 0% B 2% C n/a |
Conditions | Yield |
---|---|
In neat (no solvent) evapn. in N2-plasma-flow; detd. by X-ray diffraction; | A 1% B 1% |
Conditions | Yield |
---|---|
Product distribution / selectivity; |
Conditions | Yield |
---|---|
at 1000℃; under 810.081 Torr; Gas phase (argon/H2 or argon alone); | |
With diborane at 1000℃; under 810.081 Torr; Gas phase (H2/argon); | |
With tri-tert-butyl phosphine at 1000℃; under 810.081 Torr; Gas phase (H2/argon); |
Conditions | Yield |
---|---|
In neat (no solvent) High Pressure; excessive NH4Cl and CaSi2 heated at 600 °C for 10 h in autoclave; |
aluminum oxide
silica gel
C
carbon monoxide
D
silicon
Conditions | Yield |
---|---|
In melt mixing of Al2O3 and SiO2 in weight ratio 69:31 in C2H5OH using a ball mill for 1 h, drying at 75°C in an oven, infiltration into SiC preform in temp. range from 1830°C to 1850°C in BN crucible with a lid for 10 min; gas evolution, identification by XRD; |
Conditions | Yield |
---|---|
With silicon In neat (no solvent) reaction in a Rh crucible in a high vacuum at 1300-1400 °C, small amount of Si by use of a small exceed of Si after vaporization of the other reaction educts, further product (beside Si): a glassy, amorphous yellow-brown black substance;; | |
With Si In neat (no solvent) reaction in a Rh crucible in a high vacuum at 1300-1400 °C, small amount of Si by use of a small exceed of Si after vaporization of the other reaction educts, further product (beside Si): a glassy, amorphous yellow-brown black substance;; |
Conditions | Yield |
---|---|
cobalt In toluene High Pressure; Ti reactor sealed in N2 filled glove box connected to HPLC pump, filled O2 free toluene; Si wafer placed in; 3.4 MPa, heated to 350 or 400 or 450°C; trisilane in toluene injected; seed nanocrystals of Co; 10.3MPa, 10 min; reactor immersed in ice water, cooled to room temp.; substrate (Si wafer) removed; SEM; TEM;; |
Conditions | Yield |
---|---|
gold mixt. heating in sealed tube, according to A. V. Sandulova et al., Patent USSR No. 160829, prior. 06.07.1962, Bull. Izobretenii i Otkritii, No. 5 (1964): R. S. Wagner et al., J. appl. Phys. 35, 9 (1964) 2993; |
Conditions | Yield |
---|---|
In neat (no solvent) incineration of disiloxane;; formation of amorphous Si;; | |
With air In neat (no solvent) combustion in a flame with formation of a white smoke;; |
Conditions | Yield |
---|---|
With potassium fluoride; potassium chloride In melt Electrochem. Process; anode: graphite crucible with melt (KCl, 25% KF, 1% K2SiF6, K2CrO4), cathode: W rod, reference electrode: Pt wire, 900°C, U=3-4 V, 0.5 or1.0% K2CrO4 (t=60 min); product removing with cathode, mixture crushing, leaching (water and aq.H2SO4 at 50-60°C), solid residue sepn. and drying (100-105.degre e.C); |
Conditions | Yield |
---|---|
With potassium fluoride; potassium chloride In melt Electrochem. Process; anode: graphite crucible with melt (KCl, 25% KF, 1% K2SiF6, K2CrO4), cathode: W rod, reference electrode: Pt wire, 900°C, U=3-4 V, 0.5% K2CrO4 (t=10 min) or 1.0% K2CrO4 (t=15 min); product removing with cathode, mixture crushing, leaching (water and aq.H2SO4 at 50-60°C), solid residue sepn. and drying (100-105.degre e.C); |
Conditions | Yield |
---|---|
In melt Electrolysis; |
tetrachlorosilane
potassium bromide
A
bromine
B
silicon
Conditions | Yield |
---|---|
byproducts: KCl; heated for some days at 400 °C in a closed tube; |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: KCl, Br2; slight reaction only on heating in a melting tube at 390-400 °C for a period of 75 hours;; | |
In neat (no solvent) byproducts: KCl, Br2; slight reaction only on heating in a melting tube at 390-400 °C for a period of 75 hours;; |
Conditions | Yield |
---|---|
With carbon monoxide In neat (no solvent) Kinetics; in a hermetic furnace with a graphite heater in an atmosphere of CO; SiC is placed in graphite crucibles with lids and kept at 2270-2670 K for 900, 1800, 2700 and 3600 s; cooled samples are weighed and investigated by chem. anal. and IR-spectrometry; |
silicon
Conditions | Yield |
---|---|
With aluminum oxide In neat (no solvent) byproducts: CO, Al-Si-alloy; | |
In neat (no solvent) |
Conditions | Yield |
---|---|
In neat (no solvent) decompn. at about 2500K;; | |
In neat (no solvent) decompn. in an electric furnace at various temp.;; | |
In neat (no solvent) | |
In neat (no solvent) |
Conditions | Yield |
---|---|
In neat (no solvent) decompn. at 1 atm. above 2100°C;; | |
In neat (no solvent) decompn. at 1500-1600°C in high-vac.;; | |
In neat (no solvent) Kinetics; in a hermetic furnace with a graphite heater in an atmosphere of He; SiC is placed in graphite crucibles with lids and kept at 2770 K for 900, 1800, 2700 and 3600 s; cooled samples are weighed and investigated by chem. anal. and IR-spectrometry; | |
In neat (no solvent) decompn. at 1500-1600°C in high-vac.;; | |
In neat (no solvent) decompn. at 1 atm. above 2100°C;; |
Conditions | Yield |
---|---|
In neat (no solvent) reaction at 2000 °C;; | |
In neat (no solvent) at 2000°C;; | |
In neat (no solvent) reaction at 2000 °C;; | |
In neat (no solvent) reaction at 2000 °C;; | |
In neat (no solvent) |
Conditions | Yield |
---|---|
In melt in a tantalum tube weld-seald under Ar and protected from air by a silica jacket sealed under vac.; mixt. Li, Al, Si (15:3:6 mol) heated at 1223K, 10 h in vertical furnace and shaken several times;; cooled at rate of 6 K h**-1; elem. anal.; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) Ar atm.; molar ratio Ba:Li:Si 4:2.1:6, 1000°C; cooling (400°C), annealing; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) placing of SrH2 and Si in welded Ta containers, heating within evacuated, well-flamed, sealed silica jacket at 1150°C for 6 h, cooling to650°C with rate of 10-12°C/h; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 1150 °C for 6 days, Ta-tube in an evacuated silica ampoule; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 1150 °C for 2 days, Ta-tube in an evacuated silica ampoule; | 100% |
Conditions | Yield |
---|---|
In dichloromethane; N,N-dimethyl-formamide | 100% |
Conditions | Yield |
---|---|
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube; | 100% |
Conditions | Yield |
---|---|
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube; | 100% |
Conditions | Yield |
---|---|
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube; | 100% |
Conditions | Yield |
---|---|
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube; | 100% |
Conditions | Yield |
---|---|
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube; | 100% |
Conditions | Yield |
---|---|
With cesium chloride at 1100℃; for 12h; Milling; Sealed tube; | 100% |
Conditions | Yield |
---|---|
With cesium chloride In acetone at 1100℃; under 0.01 Torr; for 12h; Sealed tube; | 100% |
Conditions | Yield |
---|---|
In gaseous matrix byproducts: graphite; generation of SiO by Heating Si + SiO2 in Ar-stream, mixing with CH4 in H2-stream at 1500-1560°C, pptn. of SiC in cooler reactor zone; X-ray diffraction, electron microscopy, EPMA, EELS; | 99% |
Conditions | Yield |
---|---|
In melt Hf, Cr, and Si were pressed into pellets and arc-melted under Ar; X-ray powder diffraction; | 99% |
Conditions | Yield |
---|---|
In melt Ti, Cr, and Si were pressed into pellets and arc-melted under Ar; X-ray powder diffraction; | 99% |
Conditions | Yield |
---|---|
In melt Zr, Cr, and Si were pressed into pellets and arc-melted under Ar; X-ray powder diffraction; | 99% |
Conditions | Yield |
---|---|
In neat (no solvent) heating of amorphous Si in a Cl2 stream at moderate red heat;; | 98% |
In neat (no solvent) reaction of Si in Cl2 atmosphere with inflammation on heating;; | |
moderate heating;; |
Conditions | Yield |
---|---|
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere; | 98% |
Conditions | Yield |
---|---|
With methylene chloride; copper In neat (no solvent) vibrating of the Si-Cu powder;; | 97% |
With methylene chloride; copper In neat (no solvent) CH3Cl and Si-Cu/Cu-oxide at 300-375°C;; | 82.4% |
With methylene chloride; copper In neat (no solvent) CH3Cl and Si purified by treatment with strong acids;; | |
With methylene chloride In neat (no solvent) | |
With CH3Cl In neat (no solvent) |
Conditions | Yield |
---|---|
In neat (no solvent) at 1250°C for 20 min; XRD; | 96% |
In neat (no solvent) at 1150°C for 100 min; XRD; | 95% |
In gaseous matrix (H2-He-N2 4%-25%-71%), 1400°C, 15 h; | 59.9% |
Conditions | Yield |
---|---|
With sebaconitrile; copper(I) oxide In NALKYLENE 500 at 200℃; for 14h; Product distribution / selectivity; | A 3.32% B 95.7% |
With octanedinitrile; copper(I) oxide In NALKYLENE 500 at 200℃; for 14 - 21h; Product distribution / selectivity; | A 3.45% B 94.18% |
With hexanedinitrile; copper(I) oxide In NALKYLENE 500 at 200℃; for 14h; Product distribution / selectivity; | A 5.26% B 93.38% |
Conditions | Yield |
---|---|
In neat (no solvent) heating Si (in tube of ceramic material) to 1180°C and red P to 400°C;; | 95% |
In neat (no solvent) heating Si (in tube of ceramic material) to 1180°C and red P to 400°C;; | 95% |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: SiO; powder mixt. cold pressed, than heat-treated in a H2 flow (4KPa) at temp. increasing slowly from 1200 to 1400°C for 2h, kept at 1450-1500°C for 2h; | 95% |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) placing of EuH2 and Si in welded Ta containers, heating within evacuated, well-flamed, sealed silica jacket at 1150°C for 6 h, cooling to650°C with rate of 10-12°C/h; | 95% |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) placing of CaH2 and Si in welded Ta containers, heating within evacuated, well-flamed, sealed silica jacket at 1150°C for 6 h, cooling to650°C with rate of 10-12°C/h; | 95% |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) placing of BaH2 and Si in welded Ta containers, heating within evacuated, well-flamed, sealed silica jacket at 1150°C for 6 h, cooling to650°C with rate of 10-12°C/h; | 95% |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) placing of Sr and Si in welded Ta containers, heating under vac. at 1300°C for 6 h, cooling to 600°C with rate of 8°C/h; | 95% |
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