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Zibo Hangyu Biotechnology Development Co., Ltd is a leading manufacturer and supplier of chemicals in China. We develop produce and distribute high quality pharmaceuticals, intermediates, special chemicals and OLED intermediates and other fine chemi
high purity lowest priceAppearance:solid or liquid Storage:in sealed air resistant place Package:drum and bag Application:for pharma use Transportation:by sea or air Port:Beijing or Guangzhou
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Product Description Description & Specification Category Pharmaceutical Raw Materials, Fine Chemicals, Bulk drug Standard Medical standard
Cas:7440-45-1
Min.Order:1 Kilogram
FOB Price: $112.0
Type:Trading Company
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1.High Quality Specialty Chemicals2.Expertise and Experience in Manufacturing High Purity, High Quality Chemicals3.Long Term Focus in Inorganics, Organometallics and Metals4.ISO 9001 CertifiedAppearance:(packed in mineral oil)
Cerium Storage:keep in dry and cool condition Package:25kg or according to cutomer's demand Application:Chemical research/pharma intermediate Transportation:By Sea,by Air,By courier like DHL or Fedx. Port:Shanghai/Shenzhen
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inquiryCerium (Ce) Appearance:Piece, grain and powders.
Supply top quality products with a reasonable price Application:api
CeriumAppearance:Off white to slight yellow solid Storage:Stored in shaded, cool and dry places Package:1L 5L 10L 25L bottle Application:pharma intermediate Transportation:Handle with cares to avoid damaging the packages. Protect them from sunshine o
high purity Application:Drug intermediates Materials intermediates and active molecules
Conditions | Yield |
---|---|
With calcium In neat (no solvent) start of react. at 700-800°C, raise of temp. during react. (about 600°C, in presence of an eutic mixture of KCl-LiCl3 less than 600°C);; metal-powder;; | 99% |
With Ca In neat (no solvent) start of react. at 700-800°C, raise of temp. during react. (about 600°C, in presence of an eutic mixture of KCl-LiCl3 less than 600°C);; metal-powder;; | 99% |
In melt Electrolysis; electrolysis of CeCl3 in KCl/LiCl, complete exclusion of O2;; | 97% |
Conditions | Yield |
---|---|
With calcium In neat (no solvent) start of react. at 400°C, in presence of I2;; contaminations in wt.-%: 1-5 Ca, 0.1-1Mg, removal by distn. in vac.;; | 93% |
With Ca In neat (no solvent) start of react. at 400°C, in presence of I2;; contaminations in wt.-%: 1-5 Ca, 0.1-1Mg, removal by distn. in vac.;; | 93% |
With lithium In neat (no solvent) byproducts: LiF; in presence of I2; 78.17g CeF3, 9.6g Li, 20g subl. I2, under Ar, react. in a furnace of 1280°C, heating to 1100-1150°C after end of react. (40min); investigation of different vessel-materials;; | 50-95 |
Conditions | Yield |
---|---|
In melt Electrolysis; electrolyte: CeF3, BaF2, LiF; continuous addn. of CeO2, 850-900°C, 800-900A, 7-8V, current yield 96%; under He;; | 90% |
In melt Electrolysis; bath composition (in wt.-%): 73 CeF3, 15 LiF, 12 BaF2; 11V, 249A, starting current density: 10.2A/cm**2 (cathode), 4.1A/cm**2 (anode);; purity 99.91-99.97%;; | |
In melt Electrolysis; bath composition (in mol-%): 21.9 CeF3, 73.1 LiF, 5.0 BaF2, 3-5 wt.-% CeO2, 760-850°C; description of different cells;; |
cerium
Conditions | Yield |
---|---|
With Hg; HCl; acetic acid In hydrogenchloride byproducts: H2; Electrochem. Process; soln. Ce2O3 in HCl; amalgamation on Hg cathode in buffer pH=3.4-3.7 (CH3COOH, CH3COONa); decomposed at 900-1250°C below 1E-6 Torr; various product yields (63.6-99.5%) for various conditions; amalgam rinsed (H2O, EtOH); degassed at 1000°C in vac.; elem. anal.; |
Conditions | Yield |
---|---|
Products depend on amount of Mg. In H2 atmosphere also formation of Ce hydrides.; |
Conditions | Yield |
---|---|
equilibrium at 1800°C; | |
equilibrium at 1800°C; |
cerium(III) fluoride
aluminium
A
cerium
B
aluminum(III) fluoride
Conditions | Yield |
---|---|
In melt heating Al in a melt of CeF3 to 1000°C, react. stops when Al contents 1.5% Ce;; |
Conditions | Yield |
---|---|
In neat (no solvent) reaction at 1400-1550 °C and a pressure below 1E-2 Torr;; | |
In neat (no solvent) reaction at 1400-1550 °C and a pressure below 1E-2 Torr;; |
cerium
Conditions | Yield |
---|---|
With aluminium In neat (no solvent) reduction, booster: BaO2;; | |
With aluminium In neat (no solvent) byproducts: AlO; 1000-1500°C, 1E-4 Torr;; | |
With aluminium In neat (no solvent) reduction in presence of Fe and Si, large amounts of Si are necessary for good yields;; |
Conditions | Yield |
---|---|
0-1000°C; thermodynamic properties given; |
A
cerium
B
2,2,6,6-tetramethyl-3,5-heptadionato ion
Conditions | Yield |
---|---|
In gaseous matrix Irradiation (UV/VIS); photodissociation (248 nm) in a buffer gas (N2+CH4), heating of precursor; laser-induced fluorescence; |
cerium
Conditions | Yield |
---|---|
In neat (no solvent) reduction in O2/H2-blow-pipe;; |
cerium
Conditions | Yield |
---|---|
In neat (no solvent) Irradiation (UV/VIS); lanthanide compd. photodissociation by excimer laser irradiation at 248 nm; LIF detection; |
cerium
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: H2; heating (vac., 5°C/min, 500-730°C); DTA monitoring; |
Conditions | Yield |
---|---|
dissocn. in vac. at 2100°C; | |
dissocn. in vac. at 2100°C; |
Conditions | Yield |
---|---|
decompn. above 1080°C; |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) heating at 1050°C in tube furnace for 130 h, under H2; XRD; |
cerium
Conditions | Yield |
---|---|
With NaCl In water Electrochem. Process; deposited on Al alloy; |
Conditions | Yield |
---|---|
In neat (no solvent) stoich. mixt. heating in sealed Ta capsule under Ar at 1420 K for 5 d; | 100% |
In neat (no solvent) dry Ar-atmosphere; stoich. amts., sealed Ta-capsule, 1420 K, 5 d; quenching in cold water; |
Conditions | Yield |
---|---|
In neat (no solvent) stoich. mixt. heating in sealed Ta capsule under Ar at 1340 K for 5 d; | 100% |
In neat (no solvent) dry Ar-atmosphere; stoich. amts., sealed Ta-capsule, 1340 K, 5 d; quenching in cold water; |
Conditions | Yield |
---|---|
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 900 °C for 5 days, Ta-tube in an evacuated silica ampoule; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 1100 °C for 10 days, Ta-tube in an evacuated silica ampoule; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 1100 °C for 6 days, Ta-tube in an evacuated silica ampoule; | 100% |
Conditions | Yield |
---|---|
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
In melt mixing of Ce, Ga and Ge in ratio Ce:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether; | 99% |
Conditions | Yield |
---|---|
In neat (no solvent) mixt. Ce, Zn, and Ge was pressed into pellet, sealed in silica tube, andheated to 790°C over 8 h, held for 72 h, and cooled to room temp . over 8 h; | 99% |
With In In melt mixt. Ce, Zn, Ge, and In in alumina tube in sealed in vacuo silica tube was heated to 1000°C over 12 h, held for 4 h, and ramped down to 850°C over 2 h, kept for 48 h and cooled to room temp. over 24 h; centrifugation, filtration, etching with acetic acid; | 30% |
Conditions | Yield |
---|---|
In melt heating cerium, gold and indium in molar ratio 1:2:4 to 1000 for 10 h invac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.; | 99% |
Conditions | Yield |
---|---|
In melt metal:metal fluoride:S molar ratio was 2:1:3, quartz crucible, Nb- or Ta-capsule, several days, 850 °C; equimolar amt. of NaCl was used as flux; NaCl was washed out with water; | 99% |
Conditions | Yield |
---|---|
With NaBr In neat (no solvent, solid phase) byproducts: NaBr; calcd. amts. of elements and compds. reacted in evacuated silica tube with excess NaBr as flux at 850°C for 7 d; | 99% |
Conditions | Yield |
---|---|
In hydrogenchloride Schlenk techniques; dissolution Ce in concd. aq. HCl (37%); XRD; | 99% |
Conditions | Yield |
---|---|
In hydrogen bromide aq. HBr; Schlenk techniques; dissolution Ce in concd. aq. HBr (48%); XRD; | 99% |
Conditions | Yield |
---|---|
In hydrogen bromide aq. HBr; Schlenk techniques; dissolution Ce in concd. aq. HI (55%); XRD; | 99% |
Conditions | Yield |
---|---|
With Hg(C6F5)2 In tetrahydrofuran byproducts: Hg, C6F5H; for 9 h at room temp.; allowed to settle, decanted, concd. (vac.), supernatant soln. removed, crystals dried (vac.); | 98% |
Conditions | Yield |
---|---|
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere; | 98% |
Conditions | Yield |
---|---|
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere; | 98% |
Conditions | Yield |
---|---|
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere; | 96% |
Conditions | Yield |
---|---|
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere; | 95% |
Conditions | Yield |
---|---|
With I2; tetrahydrofurane In tetrahydrofuran Ar; 50°C; 3 days;; filtered hot; elem. anal.;; | 94% |
Conditions | Yield |
---|---|
In water Kinetics; powder of Al and 13 wt% Ce was ball milled with EtOH under Ar for 12 h, mixt. was placed in water bath to keep temperature constant at 70°C, then water at 70°C was added into reactor and reaction was carried out for 1 h; | 93.15% |
With KCl In water Kinetics; powder of Al and 5 wt% Ce and 10 wt% KCl was ball milled with EtOH underAr for 8 h, mixt. was placed in water bath to keep temperature constant at 70°C, then water at 70°C was added into reactor and re action was carried out for 1 h; | 93.86% |
With NaCl In water Kinetics; powder of Al and 5 wt% Ce and 10 wt% NaCl was ball milled with EtOH under Ar for 8 h, mixt. was placed in water bath to keep temperature constant at 70°C, then water at 70°C was added into reactor and reaction was carried out for 1 h; | 92.5% |
Conditions | Yield |
---|---|
With THF In tetrahydrofuran under Ar or N2, Schlenk line; EtI added to Ce metal chips in THF, suspn. refluxed for 24 h; vol. of THF reduced in vacuo, ppt. filtered off, dried, extd. with THF under N2 for 5 d, ext. concd., cooled, ppt. filtered and dried in vacuo; | 93% |
Conditions | Yield |
---|---|
With Hg In neat (no solvent) under Ar, Schlenk or ampoule techniques; metal and ligand (1:3) activated with Hg heated to 100°C in 5 h and to 140°C in 80 h, stored at 140°C for 48 h; cooled to 90°C in 150 h and to room temp. in 14 h, elem. anal.; | 91% |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: H2; under N2; Sr (0.9 mmol) and Ce (0.1 mmol) ground; ground with imidazole (3 mmol); sealed in evacuated ampole; heated (180°C, 96 h); cooled to room temp. (18 h); inidazole evapd. in vac.; elem. anal.; | 91% |
Conditions | Yield |
---|---|
vapor pressure of Sm between 1217 and 1473°K given as equation; optimal conditions: 1200°C, 1E-3 Torr; | A n/a B 90% |
in vac.; |
Conditions | Yield |
---|---|
In melt (N2); combining of Ce, Au, Al (excess) and Ge in Al2O3 crucible; sealingin vac. in SiO2 tube; heating to 1000°C for 12 h; keeping at thi s temp. for 5 h; cooling to 850°C for 24 h; slow cooling to 50°C for 72 h; soaking of crucible in aq. 5 M NaOH soln. overnight; rinsing with water and acetone; | 90% |
Conditions | Yield |
---|---|
In neat (no solvent) stoich. mixt. arc-sealed in a Ta tube under Ar, Ta tube placed in SiO2 glass tube, sealed, heated at 950°C for 18 d; | 90% |
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