Conditions | Yield |
---|---|
With calcium In neat (no solvent) start of react. at 700-800°C, raise of temp. during react. (about 600°C, in presence of an eutic mixture of KCl-LiCl3 less than 600°C);; metal-powder;; | 99% |
With Ca In neat (no solvent) start of react. at 700-800°C, raise of temp. during react. (about 600°C, in presence of an eutic mixture of KCl-LiCl3 less than 600°C);; metal-powder;; | 99% |
In melt Electrolysis; electrolysis of CeCl3 in KCl/LiCl, complete exclusion of O2;; | 97% |
Conditions | Yield |
---|---|
With calcium In neat (no solvent) start of react. at 400°C, in presence of I2;; contaminations in wt.-%: 1-5 Ca, 0.1-1Mg, removal by distn. in vac.;; | 93% |
With Ca In neat (no solvent) start of react. at 400°C, in presence of I2;; contaminations in wt.-%: 1-5 Ca, 0.1-1Mg, removal by distn. in vac.;; | 93% |
With lithium In neat (no solvent) byproducts: LiF; in presence of I2; 78.17g CeF3, 9.6g Li, 20g subl. I2, under Ar, react. in a furnace of 1280°C, heating to 1100-1150°C after end of react. (40min); investigation of different vessel-materials;; | 50-95 |
Conditions | Yield |
---|---|
In melt Electrolysis; electrolyte: CeF3, BaF2, LiF; continuous addn. of CeO2, 850-900°C, 800-900A, 7-8V, current yield 96%; under He;; | 90% |
In melt Electrolysis; bath composition (in wt.-%): 73 CeF3, 15 LiF, 12 BaF2; 11V, 249A, starting current density: 10.2A/cm**2 (cathode), 4.1A/cm**2 (anode);; purity 99.91-99.97%;; | |
In melt Electrolysis; bath composition (in mol-%): 21.9 CeF3, 73.1 LiF, 5.0 BaF2, 3-5 wt.-% CeO2, 760-850°C; description of different cells;; |
cerium
Conditions | Yield |
---|---|
With Hg; HCl; acetic acid In hydrogenchloride byproducts: H2; Electrochem. Process; soln. Ce2O3 in HCl; amalgamation on Hg cathode in buffer pH=3.4-3.7 (CH3COOH, CH3COONa); decomposed at 900-1250°C below 1E-6 Torr; various product yields (63.6-99.5%) for various conditions; amalgam rinsed (H2O, EtOH); degassed at 1000°C in vac.; elem. anal.; |
Conditions | Yield |
---|---|
Products depend on amount of Mg. In H2 atmosphere also formation of Ce hydrides.; |
Conditions | Yield |
---|---|
equilibrium at 1800°C; | |
equilibrium at 1800°C; |
cerium(III) fluoride
aluminium
A
cerium
B
aluminum(III) fluoride
Conditions | Yield |
---|---|
In melt heating Al in a melt of CeF3 to 1000°C, react. stops when Al contents 1.5% Ce;; |
Conditions | Yield |
---|---|
In neat (no solvent) reaction at 1400-1550 °C and a pressure below 1E-2 Torr;; | |
In neat (no solvent) reaction at 1400-1550 °C and a pressure below 1E-2 Torr;; |
cerium
Conditions | Yield |
---|---|
With aluminium In neat (no solvent) reduction, booster: BaO2;; | |
With aluminium In neat (no solvent) byproducts: AlO; 1000-1500°C, 1E-4 Torr;; | |
With aluminium In neat (no solvent) reduction in presence of Fe and Si, large amounts of Si are necessary for good yields;; |
Conditions | Yield |
---|---|
0-1000°C; thermodynamic properties given; |
A
cerium
B
2,2,6,6-tetramethyl-3,5-heptadionato ion
Conditions | Yield |
---|---|
In gaseous matrix Irradiation (UV/VIS); photodissociation (248 nm) in a buffer gas (N2+CH4), heating of precursor; laser-induced fluorescence; |
cerium
Conditions | Yield |
---|---|
In neat (no solvent) reduction in O2/H2-blow-pipe;; |
cerium
Conditions | Yield |
---|---|
In neat (no solvent) Irradiation (UV/VIS); lanthanide compd. photodissociation by excimer laser irradiation at 248 nm; LIF detection; |
cerium
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: H2; heating (vac., 5°C/min, 500-730°C); DTA monitoring; |
Conditions | Yield |
---|---|
dissocn. in vac. at 2100°C; | |
dissocn. in vac. at 2100°C; |
Conditions | Yield |
---|---|
decompn. above 1080°C; |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) heating at 1050°C in tube furnace for 130 h, under H2; XRD; |
cerium
Conditions | Yield |
---|---|
With NaCl In water Electrochem. Process; deposited on Al alloy; |
Conditions | Yield |
---|---|
In neat (no solvent) stoich. mixt. heating in sealed Ta capsule under Ar at 1420 K for 5 d; | 100% |
In neat (no solvent) dry Ar-atmosphere; stoich. amts., sealed Ta-capsule, 1420 K, 5 d; quenching in cold water; |
Conditions | Yield |
---|---|
In neat (no solvent) stoich. mixt. heating in sealed Ta capsule under Ar at 1340 K for 5 d; | 100% |
In neat (no solvent) dry Ar-atmosphere; stoich. amts., sealed Ta-capsule, 1340 K, 5 d; quenching in cold water; |
Conditions | Yield |
---|---|
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 900 °C for 5 days, Ta-tube in an evacuated silica ampoule; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 1100 °C for 10 days, Ta-tube in an evacuated silica ampoule; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) under Ar, stoich. amt. of starting materials were heated at 1100 °C for 6 days, Ta-tube in an evacuated silica ampoule; | 100% |
Conditions | Yield |
---|---|
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
In melt mixing of Ce, Ga and Ge in ratio Ce:Ga:Ge as 1:15:1 under N2; slowly heating (60°C/h) up to 1000°C; holding at 1000°C for 5h; cooling (75°C/h) to 850°C; holding isothermally for 6 days; cooling to 200°C; hot-temp. span-filtration; treatment with 3 M soln. of I2 in DMF for 12-24 h; rinsing with DMF, hot water, drying with acetone and ether; | 99% |
Conditions | Yield |
---|---|
In neat (no solvent) mixt. Ce, Zn, and Ge was pressed into pellet, sealed in silica tube, andheated to 790°C over 8 h, held for 72 h, and cooled to room temp . over 8 h; | 99% |
With In In melt mixt. Ce, Zn, Ge, and In in alumina tube in sealed in vacuo silica tube was heated to 1000°C over 12 h, held for 4 h, and ramped down to 850°C over 2 h, kept for 48 h and cooled to room temp. over 24 h; centrifugation, filtration, etching with acetic acid; | 30% |
Conditions | Yield |
---|---|
In melt heating cerium, gold and indium in molar ratio 1:2:4 to 1000 for 10 h invac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.; | 99% |
Conditions | Yield |
---|---|
In melt metal:metal fluoride:S molar ratio was 2:1:3, quartz crucible, Nb- or Ta-capsule, several days, 850 °C; equimolar amt. of NaCl was used as flux; NaCl was washed out with water; | 99% |
Conditions | Yield |
---|---|
With NaBr In neat (no solvent, solid phase) byproducts: NaBr; calcd. amts. of elements and compds. reacted in evacuated silica tube with excess NaBr as flux at 850°C for 7 d; | 99% |
Conditions | Yield |
---|---|
In hydrogenchloride Schlenk techniques; dissolution Ce in concd. aq. HCl (37%); XRD; | 99% |
Conditions | Yield |
---|---|
In hydrogen bromide aq. HBr; Schlenk techniques; dissolution Ce in concd. aq. HBr (48%); XRD; | 99% |
Conditions | Yield |
---|---|
In hydrogen bromide aq. HBr; Schlenk techniques; dissolution Ce in concd. aq. HI (55%); XRD; | 99% |
Conditions | Yield |
---|---|
With Hg(C6F5)2 In tetrahydrofuran byproducts: Hg, C6F5H; for 9 h at room temp.; allowed to settle, decanted, concd. (vac.), supernatant soln. removed, crystals dried (vac.); | 98% |
Conditions | Yield |
---|---|
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere; | 98% |
Conditions | Yield |
---|---|
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere; | 98% |
Conditions | Yield |
---|---|
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere; | 96% |
Conditions | Yield |
---|---|
at 700 - 1100℃; for 336h; Sealed tube; Inert atmosphere; | 95% |
Conditions | Yield |
---|---|
With I2; tetrahydrofurane In tetrahydrofuran Ar; 50°C; 3 days;; filtered hot; elem. anal.;; | 94% |
Conditions | Yield |
---|---|
In water Kinetics; powder of Al and 13 wt% Ce was ball milled with EtOH under Ar for 12 h, mixt. was placed in water bath to keep temperature constant at 70°C, then water at 70°C was added into reactor and reaction was carried out for 1 h; | 93.15% |
With KCl In water Kinetics; powder of Al and 5 wt% Ce and 10 wt% KCl was ball milled with EtOH underAr for 8 h, mixt. was placed in water bath to keep temperature constant at 70°C, then water at 70°C was added into reactor and re action was carried out for 1 h; | 93.86% |
With NaCl In water Kinetics; powder of Al and 5 wt% Ce and 10 wt% NaCl was ball milled with EtOH under Ar for 8 h, mixt. was placed in water bath to keep temperature constant at 70°C, then water at 70°C was added into reactor and reaction was carried out for 1 h; | 92.5% |
Conditions | Yield |
---|---|
With THF In tetrahydrofuran under Ar or N2, Schlenk line; EtI added to Ce metal chips in THF, suspn. refluxed for 24 h; vol. of THF reduced in vacuo, ppt. filtered off, dried, extd. with THF under N2 for 5 d, ext. concd., cooled, ppt. filtered and dried in vacuo; | 93% |
Conditions | Yield |
---|---|
With Hg In neat (no solvent) under Ar, Schlenk or ampoule techniques; metal and ligand (1:3) activated with Hg heated to 100°C in 5 h and to 140°C in 80 h, stored at 140°C for 48 h; cooled to 90°C in 150 h and to room temp. in 14 h, elem. anal.; | 91% |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: H2; under N2; Sr (0.9 mmol) and Ce (0.1 mmol) ground; ground with imidazole (3 mmol); sealed in evacuated ampole; heated (180°C, 96 h); cooled to room temp. (18 h); inidazole evapd. in vac.; elem. anal.; | 91% |
Conditions | Yield |
---|---|
vapor pressure of Sm between 1217 and 1473°K given as equation; optimal conditions: 1200°C, 1E-3 Torr; | A n/a B 90% |
in vac.; |
Conditions | Yield |
---|---|
In melt (N2); combining of Ce, Au, Al (excess) and Ge in Al2O3 crucible; sealingin vac. in SiO2 tube; heating to 1000°C for 12 h; keeping at thi s temp. for 5 h; cooling to 850°C for 24 h; slow cooling to 50°C for 72 h; soaking of crucible in aq. 5 M NaOH soln. overnight; rinsing with water and acetone; | 90% |
Conditions | Yield |
---|---|
In neat (no solvent) stoich. mixt. arc-sealed in a Ta tube under Ar, Ta tube placed in SiO2 glass tube, sealed, heated at 950°C for 18 d; | 90% |
Reported in EPA TSCA Inventory.
The Cerium, with the CAS registry number 7440-45-1, is also known as UNII-30K4522N6T. It belongs to the product categories of Inorganics; Catalysis and Inorganic Chemistry; Cerium; Cerium Metal and Ceramic Science; Chemical Synthesis; Metals. Its EINECS number is 231-154-9. This chemical's molecular formula is Ce and molecular weight is 140.12. What's more, its systematic name is Cerium. This chemical is an element of the rare earth family of metals. It is a soft, silvery, ductile metal which easily oxidizes in air. Cerium is the most abundant of the rare earth elements, making up about 0.0046% of the Earth's crust by weight. It is found in a number of minerals, the most important being monazite and bastnasite. Cerium is a malleable metal used in industrial applications.
When you are using this chemical, please be cautious about it as the following:
This chemical is highly flammable, so you should keep it away from sources of ignition - No smoking. It is harmful by inhalation, in contact with skin and if swallowed. It is irritating to eyes, respiratory system and skin. In case of contact with eyes, you should rinse immediately with plenty of water and seek medical advice. When using it, you need wear suitable protective clothing, gloves and eye/face protection.
You can still convert the following datas into molecular structure:
(1)SMILES: [Ce]
(2)Std. InChI: InChI=1S/Ce
(3)Std. InChIKey: GWXLDORMOJMVQZ-UHFFFAOYSA-N
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