Dayangchem's R&D center can offer custom synthesis according to the contract research and development services for the fine chemicals, pharmaceutical, biotechnique and some of the other chemicals. DayangChem can provide different quantities
Cas:7440-74-6
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Indium Basic information Product Name: Indium Synonyms: In;'LGC' (2601);INDIUM ICP/DCP STANDARD;INDIUM ICP STANDARD;INDIUM AA SINGLE ELEMENT STANDARD;INDIUM, AAS
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Cas:7440-74-6
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inquiryHenan Wentao Chemical Product Co.,Ltd is Located in Zhengzhou High-tech Development Zone with import and export license, We passed ISO 9001:2008 as well, Henan Wentao has developed more than 1000 compounds, which are widely used in the fields of prod
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Ocean inorganic department is a professional supplier and exporter engaging in inorganic chemical materials and metal organic compounds. Over the past years, our company is committed to improving the product quality and developing new products, in or
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Indium cas 7440-74-6Appearance:white crystalline powder Storage:Store in dry, dark and ventilated place Package:25KG drum Application:intermediate Transportation:by air, by sea, by express
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inquiryindium
Conditions | Yield |
---|---|
In not given Electrolysis; at 60°C;for 40 min; density of current 3-6 A/dm^2; electrolyte: in the presence of K-Na-tartarate; | 100% |
In not given Electrolysis; at 60°C;for 40 min; density of current 3-6 A/dm^2; in the presence of H2SO4; | 100% |
In not given Electrolysis; at 60°C;for 40 min; density of current 3-6 A/dm^2; in the presence of acetic acid, Na-acetate; | 100% |
Conditions | Yield |
---|---|
In decalin byproducts: isobutane; pyrolysis in decalin under dry and deoxygenated N2 (140°C, 24 h); GLC anal. of org. products; | A >99 B 96% |
Conditions | Yield |
---|---|
In toluene at 20℃; for 24h; Inert atmosphere; Schlenk technique; Glovebox; | A 96% B 94% C n/a |
Conditions | Yield |
---|---|
In dichloromethane addn. of soln. of Cp2Co in CH2Cl2 to suspn. of InOTf in CH2Cl2; pptn., filtration, rinsing of ppt. with CH2Cl2; removal of solvent in vac.; slow evapn of concd. CH2Cl2 soln.; crystn.; | A n/a B 90.1% |
Conditions | Yield |
---|---|
With dimethyl sulfoxide In benzene | A 90% B n/a |
With [2,2]bipyridinyl In benzene | A 90% B n/a |
With triethylamine In benzene | A 90% B n/a |
Conditions | Yield |
---|---|
In xylene pyrolysis in p-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products; | A n/a B 85% |
Conditions | Yield |
---|---|
In m-xylene=m-xylol pyrolysis in m-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products; | A n/a B 83% |
Conditions | Yield |
---|---|
In o-xylene=o-xylol pyrolysis in o-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products; | A n/a B 72% |
Conditions | Yield |
---|---|
In xylene pyrolysis in p-xylene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products; | A n/a B 67% |
lithium pentamethylcyclopentadienide
A
indium
C
bis(pentamethylcyclopentadienyl)indium(III) chloride
D
decamethylfulvalene
Conditions | Yield |
---|---|
In diethyl ether InCl added to suspension of Li(C5(CH3)5), stirred for 5h at room temp.; exclusion of air and moisture; filtered, washed four times with ether, sublimation; elem. anal.; | A 21% B 62.01% C 5% D 2.5% |
tri-sec-butylindium
A
indium
B
2,2',3,3'-tetrahydro-1H,1'H-1,1'-biindene
Conditions | Yield |
---|---|
In further solvent(s) pyrolysis in indane under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products; | A n/a B 62% |
Conditions | Yield |
---|---|
In decalin byproducts: butene; pyrolysis in decalin under dry and deoxygenated N2 (140°C, 24 h); GLC anal. of org. products; | A 60% B >99 |
Conditions | Yield |
---|---|
In further solvent(s) pyrolysis in p-chlorotoluene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products; | A n/a B 60% |
Conditions | Yield |
---|---|
In tetralin pyrolysis in tetralin under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products; | A n/a B 60% |
tri-sec-butylindium
A
indium
B
2,3-diphenylbutane
Conditions | Yield |
---|---|
In ethylbenzene pyrolysis in ethylbenzene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products; | A n/a B 51% |
tri-sec-butylindium
A
indium
B
3,4-dimethylhexane
C
butene-2
D
n-butane
Conditions | Yield |
---|---|
In decalin pyrolysis in decalin under dry and deoxygenated N2 (140°C, 24 h); GLC anal. of org. products; | A >99 B 10% C 30% D 40% |
Conditions | Yield |
---|---|
In further solvent(s) pyrolysis in p-methoxytoluene under dry and deoxygenated N2 (stirring; 140°C, 9 h); GLC anal. of org. products; | A n/a B 35% |
K(1+)*{HIn(CH2C(CH3)3)3}(1-)=K{HIn(CH2C(CH3)3)3}
Chlorodiisopropylphosphane
A
indium
B
(((CH3)3CCH2)2In(P(CH(CH3)2)2))2
C
((CH3)3CCH2)3In*P(H)(CH(CH3)2)2
D
((CH3)3CCH2)3In*P2(CH(CH3)2)4
Conditions | Yield |
---|---|
In pentane byproducts: H2, (Me3CCH2)P(i-Pr)2, KCl; under Ar, standard vac. line techniques; pentane solns. of ClP(i-Pr)2 and In compd. (molar ratio 1:1) cooled to -78°C; combined; warmed slowly to room temp.; stirred for 2 d; pentane sol. products sepd. from ppt. by extn. (8 times); solvent removed by vac. distn. at 0°C; mixt. of three In compds. obtained; P2(i-Pr)4 adduct crystd. at room temp. in drybox; detd. by (1)H and (31)P NMR spectroscopy; | A n/a B n/a C n/a D 33.7% |
N,N,N,N,-tetramethylethylenediamine
indium(III) chloride
A
indium
Cl2InCH2InCl2((CH2N(CH3)2)2)2
Conditions | Yield |
---|---|
With methylene chloride In dichloromethane; toluene equimolar amts. of InCl and InCl3 suspended in CH2Cl2-toluene (1:1, v/v) at -80°C, TMEDA added, stirred, allowed to reach room temp., further stirred for 1 h (total react. time 3-4 h); filtered, crystals deposited on standing collected and dried under vac., further crop obtained by addn. of Et2O to mother liquor and recrystn. (CH2Cl2); InCl3 solvate isolated from separate expt. by addn. of petroleum ether to react. mixt.; elem. anal.; | A n/a B 20% C n/a |
lithium tetrahydridoindanate
quinuclidine hydrochloride
lithium bromide
A
indium
Conditions | Yield |
---|---|
In diethyl ether byproducts: H2, LiCl; quinuclidine hydrochloride added over 5 min to an in situ generated soln. of LiInH4 contg. LiBr in Et2O at -78°C, warmed to -30°C,stirred for 2 h, filtered, kept at this temp. for 72 h; evapd. (vac.), extd. (toluene), crystd. at -50°C overnight; | A n/a B 17% |
Conditions | Yield |
---|---|
In tetrahydrofuran byproducts: tBu3SiH, tBu3SiBr, (tBu3Si)2; equimolar ratio, stirring (-78°C, 12 h), warming (room temp.); volatile compds. removal (vac.), dissoln. (pentane), filtn., pptn. (1 week, -23°C); elem. anal.; | A n/a B 16.2% |
In tetrahydrofuran byproducts: NaBr; equimolar ratio, stirring (-78°C, 12 h), warming (room temp.); volatile compds. removal (vac.), dissoln. (pentane), filtn., pptn. (1 week, -23°C); elem. anal.; | A n/a B 16.2% |
(Cp(*)Fe(CO)2)2InI
sodium tetrakis[(3,5-di-trifluoromethyl)phenyl]borate
A
indium
B
[((η5-C5Me5)Fe(CO)2)2(μ-I)][B(C6H3(CF3)2-3,5)4]
Conditions | Yield |
---|---|
In dichloromethane (N2 or Ar); a soln. of Fe complex added to a suspn. of B complex at -78°C, warmed to 20°C over 30 min, stirred for 3 h; filtered, layered with hexanes; | A n/a B 15% |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: ethylene, HSiMe3; heated under vac. to 400°C for 10 h; | A n/a B 13% |
N,N,N,N,-tetramethylethylenediamine
indium(III) chloride
A
indium
Cl2InCH2InCl2((CH2N(CH3)2)2)2
Conditions | Yield |
---|---|
With methylene chloride In dichloromethane InCl and catalitic amts. of InCl3 suspended in CH2Cl2 at -80°C, TMEDA added, allowed to reach room temp. over ca. 2 h; Et2O added, ppt. collected, dried; | A n/a B 10% |
dicarbonylcyclopentadienyliodoiron(II)
[CH((CH3)2CN-2,6-(i)Pr2C6H3)2In]
sodium tetrakis[(3,5-di-trifluoromethyl)phenyl]borate
A
indium
B
[((2,6-diisopropylphenyl-NC(Me))2CH)Fe(III)(η5-cyclopentadienyl)(CO)][B(C6H3(CF3)2-3,5)4]
Conditions | Yield |
---|---|
In tetrahydrofuran under N2 or Ar; THF added to solid mixt. of Fe complex and NaB(C6H3(CF3)2)4; THF soln. of In compd. added; volatiles removed; extd. into toluene; soln. filtered; layered with hexane; crystd. for 1 wk; elem. anal.; | A n/a B 10% |
indium
Conditions | Yield |
---|---|
With magnesium violent but incomplete reaction; | |
With sodium carbonate; pyrographite in blow pipe; | |
With hydrogen in tube with H2-flow; |
Conditions | Yield |
---|---|
In neat (no solvent) (Ar); In2O3 and Mn reacted in 1:1 or 1:2 or 2:1 molar ratio; powdered inmortar; sealed under vacuum in quartz ampoule; heated to 723 K and with 0.5 K/h to 973 K; maintained for 7 days; cooled to 0.8 K/h to 473 K; le ft standing at room temp.; |
Conditions | Yield |
---|---|
byproducts: In2O3; at 473°K and then at 673-773°K more; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) In, As evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 580.+-.20°C, 150h; | 100% |
In neat (no solvent) deposited at GaAs by periodic supply of As and Ga species, deposition times was 25 min; | |
In, As sources used on InAs substrate at 450 to 525°C; | |
In neat (no solvent) mixt. melting (evac. sealed quartz capsule, 7E-4 hPa); differential thermal anal.; | |
In neat (no solvent, solid phase) annealing (800 K, 7 d); |
Conditions | Yield |
---|---|
In neat (no solvent) In, Sb evacuated, closed in an outgassed quartz ampoule at .apprx.1E-4 Pa, heated at 500.+-.20°C, 70h or heated at 400.+-.20°C, 110h; | 100% |
In melt crystn. from the melt with nearly stoichiometric composition;; single crystals obtained;; | |
In neat (no solvent) High Pressure; 0.7 GPa, laser heating; |
Conditions | Yield |
---|---|
With Et4NClO4 In acetonitrile byproducts: H2; Electrolysis; using indium metall anode, platinum wire cathode in soln. of Et4NClO4 and dihydroxynaphthalene (2 h, N2, 20 mA), hydrogen gas evolving at the cathode and forming product at the anode; product collected by filtration, washed with acetonitrile and Et2O, dried (vac.); elem. anal.; | 100% |
Conditions | Yield |
---|---|
at 299.84 - 999.84℃; | A 100% B n/a |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 550 - 950℃; for 240h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 350 - 950℃; for 240h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
at 590 - 900℃; for 120h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
With oxygen In dimethyl sulfoxide metal. In under O2 atm. treated with DMSO and triflic acid (3 equiv.) in3 portions, heated at 100°C for 22 h; | 99% |
Conditions | Yield |
---|---|
In neat (no solvent) mixt. K, Nb, In, and As was sealed in Nb container, enclosed in evacuated fused-silica ampule and heated at 600°C for a week and cooled slowly; elem. anal.; | 99% |
Conditions | Yield |
---|---|
In neat (no solvent) (Ar); a mixt. of Gd, Ge, and In sealed (vac.), heated; | 99% |
Conditions | Yield |
---|---|
In melt heating lanthanum, gold and indium in molar ratio 1:2:4 to 1000 for 10 hin vac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.; | 99% |
Conditions | Yield |
---|---|
In melt heating praseodymium, gold and indium in molar ratio 1:2:4 to 1000 for 10 h in vac., keeping at 1000°C for 120 h; cooing to room temp. for 48 h, X-ray anal.; | 99% |
Conditions | Yield |
---|---|
In melt heating cerium, gold and indium in molar ratio 1:2:4 to 1000 for 10 h invac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.; | 99% |
Conditions | Yield |
---|---|
In tetrahydrofuran | 99% |
Conditions | Yield |
---|---|
In dichloromethane | 99% |
Conditions | Yield |
---|---|
In melt heating neodymium, gold and indium in molar ratio 1:2:4 to 1000 for 10 hin vac., keeping at 1000°C for 120 h; cooling to room temp. for 48 h, X-ray anal.; | 99% |
Conditions | Yield |
---|---|
In nitromethane at 20℃; for 1.5h; Sonication; | 99% |
Conditions | Yield |
---|---|
With oxygen; tetraethylammonium perchlorate In acetonitrile Electrolysis; bubbling O2 through a soln. of thiol in CH3CN/Et4NClO4, electrolysis (open to atmosphere): Pt cathode, In anode, 15V, 50 mA, 1.0 h react. time, at the end of electrolysis stirring for ca. 12 h; filtration, washing with CH3CN, then petroleum ether, drying in vac.; elem. anal.; | 98% |
Conditions | Yield |
---|---|
In nitromethane at 20℃; for 0.5h; Sonication; | 98% |
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