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Conditions | Yield |
---|---|
With zinc In neat (no solvent) byproducts: ZnO; complete reduction at 500°C;; | 100% |
With Zn In neat (no solvent) byproducts: ZnO; complete reduction at 500°C;; | 100% |
With urea byproducts: H2O, CO2, N2; react. in a crucible over a low Meker flame, heating gently for 10 min; metal was extd. manually with a spatula; | 71% |
bismuth
Conditions | Yield |
---|---|
In neat (no solvent) decomposition on heating above boiling temperature;; re-sulphuration on cooling down under exclusion of air; formation of Bi oxide in presence of air;; | 100% |
With sodium hydroxide In neat (no solvent) heating of Bi2S3 with NaOH at 400-500°C; thermodynamic calculations;; | |
With iron In neat (no solvent) byproducts: FeS; heating of the sulfide with Fe; formation of Bi and Bi containing dross;; addition of alkaline or earth alkaline sulfides to the reaction mixture; separation from As and Sb containing speiss;; |
Conditions | Yield |
---|---|
With calcium reduction with Ca at 220°C;; | 100% |
With magnesium In diethyl ether reduction in presence of ether at 25°C;; | 100% |
With Mg In diethyl ether reduction in presence of ether at 25°C;; | 100% |
bismuth
Conditions | Yield |
---|---|
With hydrogen In acetic acid reduction at 150°C, 100 atm., 24 hours, 1,25n solution (acetic acid), 0.1n acetate;; | 100% |
Conditions | Yield |
---|---|
In toluene mixt. held for 5 h at 20°C; org. layer decanted; solvent evapd. (vac.); extd. (hexane); recrystd. (toluene/hexane=8/1); ESR; | A 100% B 86% C 90% |
Conditions | Yield |
---|---|
With hydrogen In xylene byproducts: C6H6; 60 atm, 124 h, 225°C; | 99.4% |
With hydrogen In xylene reduction of triphenyl Bi with H2 under a pressure of 60 at on heating at 250°C;; | 99.4% |
With hydrogen In xylene byproducts: C6H6; 60 atm, 124 h, 150°C; | 6.9% |
Conditions | Yield |
---|---|
In water room temp.; X-ray diffraction, gravimetric anal.; | 99% |
Conditions | Yield |
---|---|
In toluene mixt. held for 5 h at 20°C; org. layer decanted; solvent evapd. (vac.); extd. (hexane); recrystd. (toluene/hexane=8/1); ESR; | A 90% B 97% C 74% |
benzene-d6
triphenylbismuthane
A
bismuth
B
biphenyl
C
biphenyl-d10
D
2,3,4,5,6-pentadeuterio-biphenyl
Conditions | Yield |
---|---|
In benzene-d6 Irradiation (UV/VIS); 40-50°C, 150 h; | A n/a B 2.5% C 2.3% D 95.2% |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: Se-(4-CH3C6H4) 4-bromobenzenecarboselenoate; Bi-compound under N2 in an ampoule was heated at 150°C for 2 h; ppt. was filtered (Bi), washed with diethyl ether and CH2Cl2, evapd., column chromy. on silica gel (hexane-diethyl ether); | A 1% B 95% |
bismuth(III) chloride
triethylstannane
A
bismuth
B
chlorotriethylstannane
Conditions | Yield |
---|---|
byproducts: H2; heating dry powdered BiCl3 with (C2H5)3SnH under reflux;; | A n/a B 93% |
byproducts: H2; heating dry powdered BiCl3 with (C2H5)3SnH under reflux;; | A n/a B 93% |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: Se-(4-CH3C6H4) 4-methylbenzenecarboselenoate; Bi-compound under N2 in an ampoule was heated at 150°C for 2 h; ppt. was filtered (Bi), washed with diethyl ether and CH2Cl2, evapd., column chromy. on silica gel (hexane-diethyl ether); | A 1% B 93% |
A
bismuth
B
tris(4-methoxyphenyl)bismuth
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: Se-(4-CH3C6H4)-4-methoxybenzenecarboselenoate; Bi-compound under N2 in an ampoule was heated at 150°C for 2 h; ppt. was filtered (Bi), washed with diethyl ether and CH2Cl2, evapd., column chromy. on silica gel (hexane-diethyl ether); | A 1% B 92% |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: Se-(4-CH3C6H4) 3-Cl-2,6-CH3Obenzenecarboselenoate; Bi-compound under N2 in an ampoule was heated at 150°C for 2 h; ppt. was filtered (Bi), washed with diethyl ether and CH2Cl2, evapd., column chromy. on silica gel (hexane-diethyl ether); | A 1% B 92% |
Conditions | Yield |
---|---|
With carbon dioxide In neat (no solvent) byproducts: SO2, (BiO)2SO4; reaction in stream of CO2 under layer of salt;; | 90% |
With iron; pyrographite In melt melting with C in a flame- or crucible furnace; addition of Na2CO3 with formation of dross; complete reduction by addition of Fe;; removal of As and Sb as speiss;; | |
With pyrographite In melt melting an ore containing 25-30 % Bi with Fe oxide and C in a cupola furnace;; Bi with impurities of Sb, Pb, As and a small amount of Cu; Bi containing speiss, dross (0.2-0.6 % Bi) and further products;; |
Conditions | Yield |
---|---|
With sodium In ammonia | A n/a B 90% |
bismuth(III) chloride
5-aza-2,2,8,8-tetramethylnonane-3,7-dione
A
bismuth
Conditions | Yield |
---|---|
With (C2H5)3N In tetrahydrofuran byproducts: (C2H5)3NHCl; at -78 °C; extd. (pentane), crystd. from pentane at -28 °C; | A n/a B 90% |
Conditions | Yield |
---|---|
In tetrahydrofuran Ph3Bi in THF was added to soln. of Yb-complex in THF, heated at 40-50°C for 24 h in evacuated sealed ampules; sepd. by centrifugation; elem. anal.; | A 90% B 68% |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: Se-(4-CH3C6H4) benzenecarboselenoate; Bi-compound under N2 in an ampoule was heated at 150°C for 2 h; ppt. was filtered (Bi), washed with diethyl ether and CH2Cl2, evapd., column chromy. on silica gel (hexane-diethyl ether); | A 1% B 90% |
Conditions | Yield |
---|---|
130°C, 3 h; | 89.1% |
Conditions | Yield |
---|---|
reaction at 800 °C;; | A 87.41% B 4.83% |
reaction at 800 °C;; | A 87.41% B 4.83% |
reaction at 700 °C;; | A 74.63% B 7.61% |
tris(pentafluorophenyl)bismuth
A
bismuth
C
Pentafluorobenzene
D
decafluorobiphenyl
Conditions | Yield |
---|---|
With water | A 0% B n/a C 87% D 0% |
With H2O | A 0% B n/a C 87% D 0% |
With water | A 0% B n/a C n/a D 0% |
Conditions | Yield |
---|---|
With Zn; HCl In water BiCl3 added to water with stirring, Zn powder added, stirred at room temp. for 2-4 h, mixture added to diluted aq. HCl for several min; ppt. filtered, washed (water), dried (vac., 60°C, 4 h); elem. anal.; | 80% |
triethylsilane
bismuth(III) chloride
A
bismuth
B
triethylsilyl chloride
Conditions | Yield |
---|---|
byproducts: H2; heating dry powdered BiCl3 with triethyl silane under reflux;; | A n/a B 79% |
byproducts: H2; heating dry powdered BiCl3 with triethyl silane under reflux;; | A n/a B 79% |
bismuth
Conditions | Yield |
---|---|
With 1-dodecylthiol In tetrahydrofuran-d8 byproducts: 2-ethylhexanoic acid, CH3(CH2)11SS(CH2)11CH3; Irradiation (UV/VIS); (N2); addn. of thiol deriv. to soln. of bismuth compd. in THF-d8, exposure to 365 nm light for 4 d at power of 7mW/cm**2; NMR monitoring; | 75% |
With 1-dodecylthiol In tetrahydrofuran byproducts: 2-ethylhexanoic acid, CH3(CH2)11SS(CH2)11CH3; Irradiation (UV/VIS); (N2); addn. of 3 equiv. of thiol deriv. to soln. of bismuth compd. in dry THF, exposure to ambient light at room temp. for 24 h or 2 wks; exposure to air, cenrifugation for 2 min at 9000 rpm, removing supernatant, suspending in THF, centrifugation, drying at room temp. in vac.; |
Conditions | Yield |
---|---|
130°C, 4 h; | 70.5% |
130°C, 3 h; | 64.9% |
130°C, 2 h; | 49.9% |
130°C, 1 h; | 17.5% |
{(C6F5)3Ge}2BiC2H5
A
bismuth
Conditions | Yield |
---|---|
In 1,2-dimethoxyethane fivefold excess of compound I in evacuated ampul shaken for 5 h at 20°C; centrifugated, decanted, solvent removed (vac.), ppt. washed (toluene);dried (vac.); | A 70% B 263.6 % C 22.5% |
Conditions | Yield |
---|---|
other Radiation; on neutron radiation; | A 56.5% B 16.4% C 2.4% |
other Radiation; on neutron radiation; | A 56.5% B 16.4% C 2.4% |
Conditions | Yield |
---|---|
With (Z)-9-octadecen-1-amine at 100℃; for 14h; Inert atmosphere; Schlenk technique; | A n/a B 55.4% |
Conditions | Yield |
---|---|
In dichloromethane byproducts: LiAsF6; under N2, 1 equiv. of Li-compd., 1 equiv. of Bi-compd. and 2 equiv. of C6Me6 were stirred in CH2Cl2 for 4 h, 5 °C; soln. was concd., held at -24 °C for 2 d, crystals were sepd., another crop was given after 2 d at this temp., elem. anal.; keeping the mother liq. for 2 weeks, Bi, the Bi4OF2Cl6(2+) and C6Me6H(1+)-cation con tg. compds. were formed.; | A n/a B n/a C 55% D n/a |
bismuth
sulfuric acid
pyrographite
2-butyl-5-hydroxymethyl-1H-imidazole
platinum
2-butyl-1H-imidazole-5-carboxaldehyde
Conditions | Yield |
---|---|
With sodium hydroxide In water | 100% |
With sodium hydroxide In water | 98.2% |
With sodium hydroxide In methanol; water | 94.5% |
Conditions | Yield |
---|---|
In melt passing a stream of I2/inert gas into molten Bi with formation of volatile BiI3; description of the aparatus given;; | 100% |
In melt passing a stream of I2/inert gas into molten Bi with formation of volatile BiI3; description of the aparatus given;; | 100% |
In melt passing a stream of I2/inert gas into molten Bi with formation of volatile BiI3; description of the aparatus given;; | 100% |
Conditions | Yield |
---|---|
In melt passing a stream of Br2/inert gas into molten Bi with formation of volatile BiBr3; description of the aparatus given;; | 100% |
In melt passing a stream of Br2/inert gas into molten Bi with formation of volatile BiBr3; description of the aparatus given;; | 100% |
In melt passing a stream of Br2/inert gas into molten Bi with formation of volatile BiBr3; description of the aparatus given;; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) Electrochem. Process; cothodic pulverization within 10 hours of Bi under pure N2 (0.1 - 0.3 Torr), glow-discharge at 1000-1500 V; anode Fe; description of the aparatus given;; 359.8 mg BiN; deposition of 12.1 weight % on cathode, of 45.4 weight % on anode, 25.2 weight % on glass parts of the aparatus, 17.3 weight % on Fe- (or Al-) protecting ring of the aparatus;; | 100% |
In further solvent(s) Electric Arc; between Bi-cathode and Cu-anode in a liquid mixture of argon and nitrogen;; | |
In further solvent(s) Electric Arc; between Bi-cathode and Cu-anode in a liquid mixture of argon and nitrogen;; | |
In neat (no solvent) cathodic pulverization of Bi during glow discharge under N2 (0.1 - 0.3 torr);; |
Conditions | Yield |
---|---|
In neat (no solvent) heating a mixture of Na and Bi (molar ratio 3 : 1) at 775°C under Ar;; | 100% |
determined by thermal analysis;; | |
determined by chemical methods;; |
Conditions | Yield |
---|---|
In neat (no solvent) under dry N2 atm. in vac. glovebox; mixt. of Bi and S was transferred inquartz tube, with was flame sealed under vac.; tube was heated to 650.d egree.C for 48 h; stayed at 650°C for 2 ds; cooled to 50°Cin 10 h; ground into powder; | 100% |
In melt by melting at possible min. temp.; | |
In melt addition of S to molten Bi at 600-700°C;; Bi content 1 - 2 %;; |
Conditions | Yield |
---|---|
heating Bi with S2Cl2 at 138.6°C, 10 hours;; | 100% |
addition of S2Cl2 to Bi;; | |
addition of S2Cl2 to Bi;; |
Conditions | Yield |
---|---|
In melt passing a stream of Cl2/inert gas into molten Bi with formation of volatile BiCl3; description of the aparatus given;; | 100% |
In melt passing a stream of Cl2/inert gas into molten Bi with formation of volatile BiCl3; description of the aparatus given;; | 100% |
In melt passing a stream of Cl2/inert gas into molten Bi with formation of volatile BiCl3; description of the aparatus given;; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) under dry N2 atm. in vac. glovebox; mixt. of Bi and Se was transferred in quartz tube, with was flame sealed under vac.; tube was heated to 600°C for 48 h; stayed at 600°C for 2 ds; cooled to 50°C in 10 h; ground into powder; | 100% |
high pressure at 420°C; | |
on Al plate at 47-180°C; tempering under m.p. of Se; no reaction at 130°C without tempering; |
Conditions | Yield |
---|---|
In melt | 100% |
In melt | 100% |
In melt addition of Bi powder to molten IBr;; extraction with CCl4;; | |
In melt addition of Bi powder to molten IBr;; extraction with CCl4;; |
Conditions | Yield |
---|---|
In neat (no solvent) Bi and Te ground, pressed at 650 K, homogenizing calcination (570 K, 400h) in evacuated quartz ampoules; single phase (X-ray- and electron-microprobe analyses); | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) Bi, Se and Te ground, pressed at 650 K, homogenizing calcination (570 K, 400h) in evacuated quartz ampoules; single phase (X-ray- and electron-microprobe analyses); | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) Bi, Se and Te ground, pressed at 650 K, homogenizing calcination (730 K, 400h) in evacuated quartz ampoules; single phase (X-ray- and electron-microprobe analyses); | 100% |
Conditions | Yield |
---|---|
differential thermal anal.; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) | 100% |
differential thermal anal.; | 100% |
Conditions | Yield |
---|---|
In acetonitrile Electrolysis; electrolysis of AgClO4 in acetonitrile, Bi anode;; not isolated;; | 100% |
Conditions | Yield |
---|---|
differential thermal anal.; | 100% |
Conditions | Yield |
---|---|
annealing at 650°C; differential thermal anal.; | 100% |
Conditions | Yield |
---|---|
quenching from 830°C; differential thermal anal.; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) Ar atm.; stoichiometric ratio, heating (1100°C, 24-48 h); | 100% |
In neat (no solvent) induction heating at 1400°C of stoich. amounts of elements in a sealed tungsten crucible; XRD; | |
In neat (no solvent, solid phase) Electric Arc; Bi and Eu were arc-melted under Ar in silica ampules, heated to 700°C for 6 h, at 1050°C for 6 h, quenched to room temp., reheatedat 1100°C for 36 h, cooled to room temp. at 3°C/h; |
Conditions | Yield |
---|---|
Stage #1: bismuth; manganese; Yb for 1h; Milling; Inert atmosphere; Stage #2: at 1125 - 1225℃; for 96h; Inert atmosphere; Sealed tube; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) at 750℃; for 48h; Inert atmosphere; | 100% |
Conditions | Yield |
---|---|
Stage #1: bismuth; tin; lithium sulfide; sulfur at 800℃; under 0.00150015 Torr; for 10h; Inert atmosphere; Glovebox; Sealed tube; Stage #2: at 800℃; for 26h; | 100% |
Conditions | Yield |
---|---|
In further solvent(s) H2SO4 was added to Bi in HNO3 with stirring and heating; more H2SO4 wasadded and suspn. was heated for 40 h; heated in a muffle furnace at 648K; elem. anal.; | 99.8% |
In sulfuric acid byproducts: SO2; by dissolving in boiling concd. H2SO4;; | |
In sulfuric acid byproducts: SO2; very weak reaction with diluted H2SO4.;; | |
In nitric acid Bi dissolved in HNO3 and treated with H2SO4, heated for several hours at 380 °C;; |
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