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inquiryTrichlorosilane Product Name Trichlorosilane Standard Of Product Q/320482DDH002-2011 CAS NO. 10025-78-2 Specification 99%
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inquiryName: Trichlorosilane CAS: 10025-78-2 Appearance: Liquid Application: The synthesis of organosilanes and alkyl, aryl and organofunctional chlorosilanes is the most basic monomer in organic silane coupling agents. It is also the r
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inquiry10025-78-2 Chemical name:Trichlorosilane Synonyms:silici-chloroforme; siliciumchloroform Formula:HSiCl3 Description:Colorless transparent liquid Superiority 1.Powerful R & D team 2.The ability of quantized production,from grams to ton
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inquirysilicon
A
Methyltrichlorosilane
B
tetrachlorosilane
C
trichlorosilane
D
dimethylsilicon dichloride
Conditions | Yield |
---|---|
With methylene chloride; copper In neat (no solvent) mixt. of CH3Cl/N2 (2:5) and Si-Cu (9:1) at 300°C;; | A 4% B n/a C n/a D 86.5% |
With methylene chloride; copper In neat (no solvent) mixt. of CH3Cl/N2 (2:5) and Si-Cu (9:1) at 300°C;; | A 4% B n/a C n/a D 86.5% |
With methylene chloride; copper In neat (no solvent) CH3Cl and Si-Cu mixt. (8:2) at 350°C;; |
n-propyltrichlorosilane
trichlorosilane
Conditions | Yield |
---|---|
With hydrogen; Rh, Re/C at 550℃; under 5807.73 Torr; for 10.1h; Product distribution / selectivity; | 82% |
Conditions | Yield |
---|---|
In neat (no solvent) reaction at 300 °C;; | A 20% B 80% |
In neat (no solvent) reaction at 300 °C;; | A 20% B 80% |
ethyltrichlorosilane
trichlorosilane
Conditions | Yield |
---|---|
With hydrogen; Rh, Re/C at 700℃; under 5947.36 Torr; for 17.8833h; Product distribution / selectivity; | 75.3% |
Methyltrichlorosilane
A
tetrachlorosilane
B
trichlorosilane
Conditions | Yield |
---|---|
With hydrogen; Rh/C at 800℃; Product distribution / selectivity; | A 73.3% B 25.1% |
Conditions | Yield |
---|---|
In neat (no solvent) SiCl4 reacted with H2 in thermo-plasma at 50 kW at 3500-5000 K; | 72.9% |
In neat (no solvent) Kinetics; byproducts: hydrogen chloride; bubbling H2 through liq. SiCl4 at constant temp.; introducing into the discharge zone; various product ratios yield various H2:SiCl4 molar ratio, molar energy input, and pressure; gas chromy.; | 60% |
at 900 - 1300℃; under 1125.11 - 3750.38 Torr; Product distribution / selectivity; |
Methyltrichlorosilane
trichlorosilane
Conditions | Yield |
---|---|
With hydrogen; Rh, Re/C at 550℃; under 4556.19 Torr; for 4.55h; Product distribution / selectivity; | 70.8% |
Conditions | Yield |
---|---|
With CuO-ZnO-In2O3 mesocrystal microspheres Reagent/catalyst; | 61.2% |
In not given heating of silicon washed with HCl and dried in a stream of HCl at 450-500 °C;; | |
In not given heating of silicon washed with HCl and dried in a stream of HCl at 450-500 °C;; | |
at 230 - 260℃; |
Methyltrichlorosilane
A
Dichloromethylsilane
B
tetrachlorosilane
C
trichlorosilane
Conditions | Yield |
---|---|
With hydrogen; Rh/C at 700℃; Product distribution / selectivity; | A 5.5% B 28.2% C 22.9% |
tetrachlorosilane
hydrogen
silicon
trichlorosilane
Conditions | Yield |
---|---|
copper(l) chloride at 525℃; Product distribution / selectivity; | 6.14% |
at 525℃; Product distribution / selectivity; | 4.6% |
at 500℃; under 22502.3 Torr; Product distribution / selectivity; Industry scale; |
1,2-Dichloropropane
A
tetrachlorosilane
B
allyltrichlorosilane
C
1,2-bis-trichlorosilanyl-propane
D
trichlorosilane
Conditions | Yield |
---|---|
at 300℃; Produkt 5: 2-Dichlorsilyl-1-trichlorsilyl-propan; |
chloroform
A
tetrachlorosilane
B
1,1,1,3,3,3-hexachloro-1,3-disilapropane
C
tris(trichlorosilyl)methane
D
trichlorosilane
Conditions | Yield |
---|---|
at 300℃; |
hydrogenchloride
tetrachlorosilane
hydrogen
silicon
trichlorosilane
Conditions | Yield |
---|---|
copper(l) chloride at 300℃; Product distribution / selectivity; |
dibromochlorosilane
trimethylstannane
A
tribromosilane
B
SiClBrH2
C
SiCl2HBr
D
trichlorosilane
E
monosilane
Conditions | Yield |
---|---|
In neat (no solvent) condensing of equimolar amts. of tinhydride and SiClHBr2 (trace of SiCl2HBr present) into cold finger, reaction at room temp. (30 min); further products; not isolated; IR spectroscopy; |
hydrogenchloride
chloroform
silicon
A
tetrachlorosilane
B
trichlorosilane
Conditions | Yield |
---|---|
With methylene chloride; cadmium; copper mixing of Cu and Si; drying (300°C, 5 h, dry nitrogen), rising temp. to 350°C, addn. of MeCl (4 h), removal of MeSiCl3 and Me2SiCl2, Cd addn. at room temp., rising temp. to 300°C, CHCl3 and HCl addn., 40 h; product collection, distn., receiver cooled to -20.degree, dist. of remains in flask,; |
hydrogenchloride
silicon
A
tetrachlorosilane
B
trichlorosilane
Conditions | Yield |
---|---|
In solid Kinetics; gas-solid react.; temp. 200 - 600°C; not isolated; detn. by DSC, XRD; | |
In gas Kinetics; (H2) reacted at pressure 9.0E+4 Pa, and at temp. 623, 673, or 723 K, Q=300 sccm and concd. HCl=1.0, 3.3, 10 vol %; | |
In neat (no solvent) dried HCl is used; glowing heat;; product mixture obtained;; |
tetrachlorosilane
trimethylstannane
A
trichlorosilane
B
trimethyltin(IV)chloride
C
monosilane
D
Dichlorosilane
Conditions | Yield |
---|---|
In neat (no solvent) inert atmosphere (N2, Ar or high vac.), room temperature, equimolar amts. of halosilane/tinhydride, reactn. time 36 h; not isolated; IR spectroscopy (identified 25-30% SiCl3H, 15% SiCl2H2 and 10% SiH4 in product mixt.); |
trimethylstannane
bromo trichloro silane
A
tetrachlorosilane
B
trichlorosilane
C
monosilane
Conditions | Yield |
---|---|
In neat (no solvent) inert atmosphere (N2, Ar or high vac.), room temperature, equimolar amts. of halosilane/tinhydride, reactn. time 3 h; not isolated; IR spectroscopy (identified 85% SiCl3H, 5% SiH4 and 5% SiCl4 in product mixt.); |
trimethylstannane
dibromo dichlorosilane
A
SiCl2HBr
B
trichlorosilane
C
trimethyltin bromide
D
monosilane
Conditions | Yield |
---|---|
In neat (no solvent) inert atmosphere (N2, Ar or high vac.), room temperature, two equiv. of tinhydride, reactn. time 2 h; not isolated; IR spectroscopy (identified 35-40% SiCl3H, 40% SiH4 and 10% SiCl2HBr in product mixt.); |
calcium hydride
tetrachlorosilane
A
trichlorosilane
B
chlorosilane
C
Dichlorosilane
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: H2, HCl; passing SiCl4 vapor over CaH2 below red heat;; | A n/a B 0% C 0% |
In neat (no solvent) byproducts: H2, HCl; passing SiCl4 vapor over CaH2 below red heat;; | A n/a B 0% C 0% |
nitrogen trichloride
monosilane
A
trichlorosilane
B
chlorosilane
Conditions | Yield |
---|---|
In gaseous matrix byproducts: HCl, H2; Ar carrier gas, room temp., static vac. glass reactor with quartz window (reaction mixt. made up in reactor); manometric monitoring, chemiluminescence spectroscopy; |
tetrachlorosilane
trichlorosilane
Conditions | Yield |
---|---|
With Cu; H2S In neat (no solvent) byproducts: Cu sulfide, H2O; passing H2S through a mixture SiCl4 and Cu powder on boiling;; | 0% |
With H2 In neat (no solvent) reaction at glowing heat;; | |
With Zn; HCl In neat (no solvent) byproducts: H2; heating of SiCl4 with Zn powder in a HCl stream up to boiling;; | |
With hydrogen; silica gel; zinc In water at 450℃; for 48h; | |
With hydrogen; copper at 750℃; for 1h; |
tetrachlorosilane
monosilane
A
trichlorosilane
B
chlorosilane
C
Dichlorosilane
Conditions | Yield |
---|---|
In gas reactor temp.: 250 - 500°C; detn. by gas chromy.; |
Conditions | Yield |
---|---|
With Cu In neat (no solvent) byproducts: H2; treatment of the mixture in a liquid air cooled bomb tube;; | 0% |
Conditions | Yield |
---|---|
With Zn In neat (no solvent) byproducts: H2; heating of SiCl4 with Zn and liquid HCl in a sealed tube at 100 °C;; | 0% |
tetrachlorosilane
hydrogen
A
hydrogenchloride
B
trichlorosilane
C
silicon
Conditions | Yield |
---|---|
byproducts: HCl; equil. reaction, at 1170-1540 K; |
tetrachlorosilane
hydrogen
A
aluminium trichloride
B
trichlorosilane
C
Dichlorosilane
Conditions | Yield |
---|---|
With aluminium In neat (no solvent) byproducts: SiCl4; reaction by passing SiCl4 vapor with H2 (1:1) over Al at 400 °C;; distn.;; | |
With Al In neat (no solvent) byproducts: SiCl4; reaction by passing SiCl4 vapor with H2 (1:1) over Al at 400 °C;; distn.;; |
tetrachlorosilane
hydrogen
A
trichlorosilane
B
Dichlorosilane
Conditions | Yield |
---|---|
With co-catalyst: pyrimidine or P(OPh)3; tri-n-butyl-tin hydride In toluene absence of air; H2-stream; further alternate co-catalysts: PCy3 or PBu3 or N-methylimidazole or pyridine or chinoline; gas chromy.; | |
tri-n-butyl-tin hydride In acetonitrile absence of air; H2-stream; gas chromy.; | |
With Al or Mg or Zn In neat (no solvent, gas phase) passing SiCl4 vapor and H2 over granulated Al, Mg or Zn at 350-450 °C;; condensation of the gaseous reaction product by dry ice, separation of the mixture by fractionation;; | |
With Al or Mg or Zn In gas passing SiCl4 vapor and H2 over granulated Al, Mg or Zn at 350-450 °C;; condensation of the gaseous reaction product by dry ice, separation of the mixture by fractionation;; |
trichlorosilane
Conditions | Yield |
---|---|
With platinum(0)-1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex In toluene at 90℃; Glovebox; Sealed tube; | 100% |
4-vinylpyridine
trichlorosilane
trichloro(hydrido)bis(4-vinylpyridine)silicon
Conditions | Yield |
---|---|
In toluene at -78 - 20℃; | 99.5% |
Conditions | Yield |
---|---|
In not given HSiCl3 and 2-octene at 50-60°C with peroxide;; | 99% |
Conditions | Yield |
---|---|
In not given HSiCl3 and 1-octene at about 55°C with diacetylperoxide;; | 99% |
In neat (no solvent) HSiCl3 and 1-octene at 150°C in presence of Cu;; | |
In neat (no solvent) HSiCl3 and 1-octene at 300°C under pressure;; | |
In neat (no solvent) HSiCl3 and 1-octene at 300°C under pressure;; |
1.2-CH2CHCH2-1.2-C2B10H10
trichlorosilane
1,2-[(CH2)3SiCl3]2-1,2-C2B10H10
Conditions | Yield |
---|---|
With catalyst:Karstedt platinum catalyst (3-3.5percent Pt) In neat (no solvent) (Ar); stirred for 2 h at room temp.; evapd., obtained as oil; | 99% |
p-phenylpyridine
trichlorosilane
trichloro(hydrido)bis(4-phenylpyridine)silicon
Conditions | Yield |
---|---|
In toluene at -78 - 20℃; | 99% |
pyridine
trichlorosilane
trichloro(hydrido)bis(pyridine)silicon
Conditions | Yield |
---|---|
In toluene at -78 - 20℃; | 98.8% |
Conditions | Yield |
---|---|
In tetrahydrofuran at 20℃; for 12h; Inert atmosphere; Schlenk technique; | 98% |
dmap
trichlorosilane
trichlorobis[4-(dimethylamino)pyridine](hydrido)silicon
Conditions | Yield |
---|---|
In tetrahydrofuran at -78 - 20℃; | 97.4% |
[(1',1'-diallyloxycarbonyl)-1,2-methano]-1,2-dihydro-C60-fullerene
trichlorosilane
TSMC
Conditions | Yield |
---|---|
With dicyclopentadienyl platinum dichloride In toluene at 70℃; for 24h; Inert atmosphere; Schlenk technique; | 97% |
trichlorosilane
silicon
Conditions | Yield |
---|---|
Stage #1: trichlorosilane under 3.75038 Torr; for 6h; Pulsed microwave radiation (25-50W); Stage #2: With hydrogen at 900℃; | 96.7% |
With hydrogen chemical vapor deposition (8% SiHCl3 in H2, 1100°C); | |
With hydrogen chemical vapor deposition (hot-wall reactor, basic pressure 10 or 76 Torr, 1223 K); |
picoline
trichlorosilane
trichloro(hydrido)bis(4-methylpyridine)silicon
Conditions | Yield |
---|---|
In toluene at -78 - 20℃; | 96.3% |
4-tert-butylpyridine
trichlorosilane
bis(4-tert-butylpyridine)trichloro(hydrido)silicon
Conditions | Yield |
---|---|
In toluene at -78 - 20℃; | 96.1% |
Conditions | Yield |
---|---|
at 50℃; for 4h; | 96% |
allyl methacrylate
trichlorosilane
3-(trichlorosilyl)propyl 2-methylprop-2-enoate
Conditions | Yield |
---|---|
With platinum(0)-1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex In toluene at 70℃; for 3h; | 96% |
Conditions | Yield |
---|---|
With titanium tetrachloride In melt melting NaCl, KCl and AlCl3 at ca. 150°C, heating to ca. 300°C, addn. of TiCl4 and Al under H2 within 2 h, addn. of more Al at 230°C, then addn. of SiHCl3 under H2 with stirring within 1 h; sepn. of the chlorosilane/silane mixture by fractional condensation and rectification; | 96% |
(carbonyl)(chloro)(hydrido)tris(triphenylphosphine)ruthenium(II)
trichlorosilane
Conditions | Yield |
---|---|
In toluene at 60℃; for 0.333333h; Inert atmosphere; Schlenk technique; | 96% |
trichlorosilane
Conditions | Yield |
---|---|
dihydrogen hexachloroplatinate at 165℃; for 6h; | 95% |
dihydrogen hexachloroplatinate at 175℃; for 8h; | 95% |
Conditions | Yield |
---|---|
In hexane under N2; Re2(CO)10 and the silane in hexane was pressurized with CO (70 atm., autoklave), heated at 200°C for 16 h; cooled, gases were vented, washed with hexane, dried with a stream of N2, sublimation; | 95% |
trichlorosilane
2,3,4,5,6-pentafluorophenylmagnesium bromide
tris(pentafluorophenyl)silane
Conditions | Yield |
---|---|
In diethyl ether reaction at -12°C (1hour) and heating under reflux for 12 hours;; | 95% |
In diethyl ether reaction at -12°C (1hour) and heating under reflux for 12 hours;; | 95% |
dodecacarbonyl-triangulo-triruthenium
trichlorosilane
cis-Ru(CO)4(SiCl3)2
Conditions | Yield |
---|---|
In hexane byproducts: CO; Irradiation (UV/VIS); in a closed quartz tube filled with CO gas (2 atm) irradiation during 3d with stirring; cooling at -78°C, 2h, drying the crystals in vac., sublimation at 40°C, 0.02 Torr onto a probe cooled to -78°C; | 95% |
Conditions | Yield |
---|---|
In water addn. of water to silicon compd. at -78°C with stirring; filtration, washing ppt. with water, drying in vac. at 85°C overnight; | 95% |
In diethyl ether cooling (ice), stirring (1 d, room temp.); filtn., washing, drying (vac. 1E-3 mbar, 2 d, 80°C); |
bis(ethylene)(tricyclohexylphosphine)platinum
trichlorosilane
Conditions | Yield |
---|---|
In toluene N2-atmosphere; condensing of excess silane into soln. of Pt-complex (-196°C), warming to room temp. (pptn.); filtration, washing (hexane), drying (vac.); elem. anal.; | 95% |
4-Ethylpyridine
trichlorosilane
trichlorobis(4-ethylpyridine)(hydrido)silicon
Conditions | Yield |
---|---|
In toluene at -78 - 20℃; | 95% |
Conditions | Yield |
---|---|
In neat (no solvent) HSiCl3 and 1-octadecene at about 300°C under pressure;; | 94% |
In neat (no solvent) HSiCl3 and octadecene at 300°C under pressure;; | 94% |
In neat (no solvent) HSiCl3 and 1-octadecene at about 300°C under pressure;; | 94% |
In neat (no solvent) HSiCl3 and octadecene at 300°C under pressure;; | 94% |
With SiliaCat Pt(0) - mesoporous organosilica microspheres doped with Pt nanoparticles In neat (no solvent) at 65℃; for 1h; | 87 %Spectr. |
chloro-carbonyl-hydrido-bis(triphenylphosphine)osmium
trichlorosilane
OsCl(triphenylphosphine)2(CO)(trichlorosilyl)
Conditions | Yield |
---|---|
In toluene N2-atmosphere; addn. of excess HSiCl3 to soln. of Os-complex, stirring for 20 min at 60°C; concn., crystn. on addn. of hexane; | 94% |
[Os(κ2-dimethyldithiocarbamate)H(CO)(PPh3)2]
trichlorosilane
[Os(κ2-dimethyldithiocarbamate)(SiCl3)(CO)(PPh3)2]
Conditions | Yield |
---|---|
In toluene toluene and HSiCl3 were added to Os complex in Schlenk tube; sealed; cooled in liq. N2; evacuated; warmed to ambient temp.; heated at 100°C for 12 h; cooled; concd. (vac.); hexane added; filtered; recrystd. (CH2Cl2/hexane); elem. anal.; | 94% |
(η5-cyclopentadienyl)methylbis(methyldiphenylphosphine)ruthenium
trichlorosilane
Cp(PMePh2)2RuSiCl3
Conditions | Yield |
---|---|
In further solvent(s) byproducts: CH4; (Ar); mixing ruthenium complex with HSiCl3, freezing with liq. N2, swarming to room temp., sealing, heating at 100°C for 16 h, cooling toroom temp.; evapn., dissolving in CH2Cl2, filtration through glass wool, addn. of hexanes, concn., filtration, drying; elem. anal.; | 92% |
Conditions | Yield |
---|---|
Stage #1: trichlorosilane; C17H36N2OPtSi2 for 0.0833333h; Inert atmosphere; Cooling with water bath; Stage #2: styrene at 16℃; for 7h; Product distribution / selectivity; Inert atmosphere; | 92% |
C17H36N2OPtSi2 In dodecane for 7h; Product distribution / selectivity; Inert atmosphere; |
trichlorosilane
sodium dioctylphosphinate
dioctylphosphinyl chloride
Conditions | Yield |
---|---|
In chloroform at 80℃; for 16h; | 91.5% |
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