Add time:08/14/2019         Source:sciencedirect.com

Dimethylhydrazine is a potential nitrogen precursor for organometallic vapor-phase epitaxy of GaN-based ternaries and quaternaries at relatively low temperatures. We have measured the vapor pressure of dimethylhydrazine and studied the pyrolysis characteristics of dimethylhydrazine in H2 ambient. Results of co-pyrolysis with triethylgallium in H2 ambient are also reported. The vapor pressure of dimethylhydrazine is given by Log P=8.19–1780/T. Pyrolysis of the dimethylhydrazine is found to proceed by cleavage of the N–N bond followed by elimination of the methyl groups. Co-pyrolysis studies showed that an adduct and an intermediate dimer form at low temperatures then further decomposed at higher temperatures to the final product GaN.

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