Add time:08/15/2019         Source:sciencedirect.com

The fabrication and characterization of site-controlled InGaAs/GaAs quantum dots (QDs) made by MOVPE using triethylgallium (TEGa) on patterned {1 1 1}B GaAs substrates are reported. Results are compared to more traditional pyramidal QD structures grown employing trimethylgallium (TMGa). Several potential advantages of the use of TEGa are demonstrated, including more reproducible achievement of QD transitions with narrow (<100 µeV) linewidths and better spectral uniformity across patterned substrates. These features are important for QD integration in optical cavities, which require both site and spectral stringent control.

We also recommend Trading Suppliers and Manufacturers of TRIETHYLGALLIUM (cas 1115-99-7). Pls Click Website Link as below: cas 1115-99-7 suppliers