Add time:08/18/2019         Source:sciencedirect.com

Mass spectrometry has been utilized to study the photolytic decomposition of TRIETHYLGALLIUM (cas 1115-99-7) and arsine leading to the deposition of GaAs thin films. A Hg-Xe arc lamp is utilized as the light source. We find that the products of photodissociation are essentially the same as those found previously for pyrolytic decomposition. We also find that while thin gallium films photodeposited from triethylgallium contain high amounts of carbon, GaAs thin films photodeposited from triethylgallium and arsine do not contain significant carbon concentrations.

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