Add time:08/19/2019         Source:sciencedirect.com

The adsorption and thermal decomposition of TRIETHYLGALLIUM (cas 1115-99-7) (TEG) on GaAs has been studied using thermal desorption and XPS techniques. Pure Ga films are deposited when adsorbed TEG layers on GaAs are heated in a reaction which competes with TEG and diethylgallium (DEG) desorption. Ethene, ethene and hydrogen are detected as the decomposition products of the overall cracking reaction.

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