Quaternary strontium copper selenides with the trivalent lanthanides exhibit the simple formula SrCuMSe3, but occur in three orthorhombic structures (with Z = 4) depending upon the radius of the M3+ cation. For SrCuLaSe3 (a = 848.82(5) pm, b = 423.04(3) pm, c = 1671.23(9) pm, space group: Pnma) ...

The luminescent properties of ZnSe, ZnSe:Cr (0.05 at.% Cr), ZnSe:Yb (0.03 at.% Yb) and ZnSe:Cr:Yb (0.05 at.% Cr, 0.05 at.% Yb) crystals, doped during the growth process by the chemical vapor transport method, were studied within the temperature interval of 6–300 K. At the 6 K temperature in the...

Substituted gadolinium gallium garnet (SGGG) crystals with calcium, magnesium and zirconium as substituting ions have been used as substrates for bismuth-substituted iron garnet epitaxial films. Single crystals have been grown from the melt composition Gd2.68Ca0.32Ga4.04Mg0.32Zr0.64O12 using the...

Ga2O3 films were deposited on gadolinium gallium garnet (Gd3Ga5O12, or GGG)(110) substrates by the metalorganic chemical vapor deposition (MOCVD) method, followed by a post-deposition thermal annealing at different temperatures. The structural analyses showed that the film annealed at 900 ℃ was...

Results of X-ray diffraction and low temperature optical absorption measurements of cerium doped gadolinium gallium garnet single crystals and epitaxial layers are reported. In the region of intra-configurational 4f–4f transitions the spectra of the bulk crystals exhibit the signatures of sever...

Bi-substituted Neodymium Iron Garnet (Nd3-xBixFe5O12, Bi:NIG) thin films with the Bi composition x=0-1.0 are prepared on both the (001) and (111) oriented gadolinium gallium garnet (GGG) substrates by a metal organic decomposition method. Crystalline qualities and magnetic properties of these fi...

Under 980 nm wavelength excitation, 530 and 550 nm green upconversion emission spectra of erbium-doped gadolinium gallium garnet single-crystal were measured in the temperature range of 298–423 K for ratiometric thermometry based on fluorescence intensity ratio (FIR). The crystal shows strong e...

The structure of the N,N-dimethylthioformamide (DMTF) solvated gallium(III) ion has been determined in solution by means of extended X-ray absorption fine structure (EXAFS) spectroscopy. The gallium(III) ion is four-coordinate in tetrahedral fashion with a mean Ga–S bond distance of 2.233(2) Å ...

In an attempt to identify an active material for use in lithium secondary batteries with high energy density, we investigated the electrochemical properties of gallium (III) sulfide (Ga2S3) at 30 °C. Ga2S3 shows two sloping plateaus in the potential range between 0.01 V and 2.0 V vs. (Li/Li+). ...

The ternary Ho–V–Ga phase diagram has been investigated at 750 °C by means of powder X–ray diffraction analysis and energy–dispersive X–ray spectroscopy. The studied system is characterized by the absence of detectable solubility for the binary compounds and by the existence of two new ter...

A silver gallium telluride single crystal of diameter 12 mm and length 80 mm was successfully grown by the vertical Bridgman method using accelerated crucible rotation technique. To confirm the unit cell parameters of the grown silver gallium telluride (AgGaTe2) crystal, single crystal X-ray dif...

Layer-dependent electronic structure and properties of gallium monochalcogenides, GaX where X = S, Se, Te, have been investigated using first-principles calculations based on various functionals, with a motivation to assess their use in photocatalytic water splitting. Since hydrogen evolution by...

First-principles calculations have been utilized to investigate the electronic and optical properties of GaTe monolayer. The GaTe single-layer reveals a proper bandgap and suitable optical properties that not observed in the other layered materials, including absorption coefficient larger than 1...

A Q-switched thulium-fluoride fiber (TFF) laser using gallium selenide (GaSe) as a passive saturable absorber (SA) for operation in the S+/S band is demonstrated. The generated pulses can be tuned from 1454 nm to 1512 nm, giving a tuning range of 58 nm. At 1502 nm, stable Q-switching operation i...

A passively Q-switched thulium/holmium fiber laser with a gallium selenide (GaSe) saturable absorber (SA) is proposed and demonstrated for the first time. The GaSe based SA is prepared by mechanical exfoliation and inserted into the proposed laser cavity to generate Q-switched pulses. Stable Q-s...

There is tremendous need for the 2D graphene-like single and multiple layered materials since they can be very useful as multifunctional materials for electronic, optical and energy generation and storage applications. We describe the preparation and morphology of selenide crystals and compared ...

Polycrystalline copper–indium–(gallium)–sulphide (CI(G)Su) absorbers were analysed by spectroscopic ellipsometry (SE) with special emphasis on the optical band gap energy. Rough CI(G)Su absorber films grown by reactive magnetron sputtering were peeled off from molybdenum coated glass substrat...

The synthesis and crystal structure of four gallium sulphide open frameworks, built from supertetrahedral clusters, are described. The structures of [C4NH12]6[Ga10S18] (1) and [C4NH12]12[Ga20S35.5(S3)0.5O] (2) contain supertetrahedral T3 clusters, while in the isostructural compounds [C4NH12]16[...

The mechanical stabilities and nonlinear properties of monolayer Gallium sulfide (GaS) under tension are investigated using density functional theory (DFT). The ultimate stresses and ultimate strains, and the structure evolutions of monolayer GaS under armchair, zigzag, and equiaxial tensions ar...

The structure of nano-sized powders of indium sulfide (In2S3) and gallium sulfide (Ga2S3), prepared by single source precursor route has been investigated by small angle X-ray scattering technique. The particle morphology shows interesting fractal nature. For In2S3, the nanoparticle aggregates s...