Conditions | Yield |
---|---|
With selenium; lithium triethylborohydride In tetrahydrofuran for 2h; Ambient temperature; | 95% |
With dilithium diselenide In tetrahydrofuran | 80% |
With lithium selenide; boron trifluoride diethyl etherate In tetrahydrofuran for 4h; Ambient temperature; | 78% |
Conditions | Yield |
---|---|
With seleno-aluminate for 3h; Ambient temperature; | 62% |
chloro-trimethyl-silane
2,4,6-trimethylphenyl bromide
A
bis(trimethylsilyl)selenide
Conditions | Yield |
---|---|
Yield given. Multistep reaction; |
chloro-trimethyl-silane
A
phenyl trimethylsilyl selenide
B
bis(trimethylsilyl)selenide
Conditions | Yield |
---|---|
With selenium 1.) ether, r.t., 12 h; 2.) ether, r.t., 24 h; Yield given. Multistep reaction. Yields of byproduct given; |
chloro-trimethyl-silane
A
phenyl trimethylsilyl selenide
B
bis(trimethylsilyl)selenide
Conditions | Yield |
---|---|
With selenium; phenylmagnesium bromide 1.) ether, r.t., 12 h; 2.) ether, r.t., 24 h; Yield given. Multistep reaction. Yields of byproduct given; |
tert-butylbis(trimethylsilyl)phosphine
A
bis(trimethylsilyl)selenide
B
t-butyl-perselenophosphonic anhydride
Conditions | Yield |
---|---|
With selenium |
A
bis(trimethylsilyl)selenide
B
diphenylselenide
C
diphenyl diselenide
Conditions | Yield |
---|---|
With selenium; chloro-trimethyl-silane 1.) diethyl ether, 12 h, 2.) diethyl ether, 24 h; Yield given. Multistep reaction. Yields of byproduct given; |
chloro-trimethyl-silane
lithium n-butylselenolate
A
Di-n-butyl selenide
B
butyl(trimethylsilyl)selane
C
bis(trimethylsilyl)selenide
Conditions | Yield |
---|---|
In tetrahydrofuran; hexane at 20℃; Product distribution; Substitution; |
Conditions | Yield |
---|---|
With ammonia; sodium | A n/a B 100% |
With ammonia; sodium |
Conditions | Yield |
---|---|
With acetonitrile In acetonitrile byproducts: (CH3)3SiCl; W-complex added to (Me3Si)2Se in CH3CN, refluxed for 4 h; solvent removed under vacuum; elem. anal., IR; | 100% |
Conditions | Yield |
---|---|
In tetrahydrofuran; toluene byproducts: BrSiMe3; Se-compd. in THF added dropwise to GaBr in toluene/THF (3:1) at room temp., heated at reflux for 2 h; separated, concentrated in vac., kept at 50°C for a few days; | 99% |
Conditions | Yield |
---|---|
In 1,1,1-trichloroethane byproducts: Si(C2H5)(CH3)3; stirred at 75°C for 45 min; filtered, annealed (400°C, 18 h); | 97% |
tris-n-propylphosphine
bis(trimethylsilyl)selenide
copper (I) acetate
[Cu(P((CH2)2CH3)3)3SeSi(CH3)3]
Conditions | Yield |
---|---|
In diethyl ether; hexane byproducts: CH3CO2Si(CH3)3; 4 equiv of P(C3H7)3 were added to a soln. of CuO2CH3 in hexane-Et2O, cooled to -45°C, ((CH3)3Si)2Se was added, the mixt. was allowed to warm slowly with stirring to -15°C, stirredfor 2 h (N2); the mother liquor was removed, the crystals were dried under vac. at 0°C for 2 h, recrystd. from cold Et2O; elem. anal.; | 97% |
In diethyl ether CuOAc dissolved in ether with 4 equiv. propylphosphane, cooled to -40°C, 1 equiv Se(SiMe3)2 was added, warmed to -5°C with stirring for 3 h, solvent evapd.; | 80% |
bis(trimethylsilyl)selenide
diphenylselenoxide
A
Hexamethyldisiloxane
B
diphenylselenide
Conditions | Yield |
---|---|
In tetrahydrofuran for 1h; Product distribution; Ambient temperature; var. selenium, tellurium and sulfur oxides, other solvents; | A n/a B 96% |
bis(trimethylsilyl)selenide
silver(I) acetate
ethyl-diphenyl-phosphane
(diphenyl(ethyl)phosphine)3Ag(trimethylsilylselenolato)
Conditions | Yield |
---|---|
In diethyl ether byproducts: CH3C(O)OSi(CH3)3; (N2); Ag salt and P(C6H5)2C2H5 dissolved in Et2O, cooled to -70°C, Se(Si(CH3)3)2 added, stirred for ca 1 h; pptd. with cold hexane, sepd., washed (hexane), dried (vac.); | 96% |
bis(trimethylsilyl)selenide
copper (I) acetate
ethyl-diphenyl-phosphane
(diphenyl(ethyl)phosphine)3Cu(trimethylsilylselenolato)
Conditions | Yield |
---|---|
In hexane; chloroform byproducts: CH3C(O)OSi(CH3)3; (N2); Cu salt dissolved with P(C6H5)2C2H5 in CHCl3 and hexane, cooled to-60°C, Se(Si(CH3)3)2 added, warmed slowly to -10°C; crystd. at -80°C for 4 d; | 96% |
bis(trimethylsilyl)selenide
Conditions | Yield |
---|---|
In tetrahydrofuran at 0 - 20℃; for 1h; Schlenk technique; | 96% |
Conditions | Yield |
---|---|
In toluene at 20℃; for 0.0833333h; Schlenk technique; | 96% |
bis(trimethylsilyl)selenide
trimethylsilyl iodide
Conditions | Yield |
---|---|
With iodine In m-xylene | 94% |
Conditions | Yield |
---|---|
In tetrahydrofuran Ar or N2 atmosphere; addn. of Sn-org. compd. to soln. of Co-compd. in THF, stirring (12 h, room temp.); removal of volatiles, repeated washing (n-heptane), recrystn. (toluene/n-hexane); elem. anal.; | 93% |
N,N,N,N,-tetramethylethylenediamine
bis(trimethylsilyl)selenide
zinc diacetate
[(N,N'-tetramethylethylenediamine)Zn(SeSiMe3)2]
Conditions | Yield |
---|---|
In tetrahydrofuran under N2 atm. to soln. Zn(OAc)2 in THF TMEDA and Se(SiMe3)2 were added at 0°C and stirred for 15 min; THF was removed in vacuo, residue was washed with pentane and dried for 2 h at 0°C, crystn. from hexane-THF (3:1) at -80°C; | 92% |
Conditions | Yield |
---|---|
In dichloromethane byproducts: Si(CH3)4; stirred at 25°C for 4 h; filtered, powder annealed in vacuo (400°C, 4 h); X-ray powder diffraction; | 91% |
In toluene byproducts: Si(CH3)4; stirred at 25°C, reaction is fairly slow, taked days to go compled; proton NMR; | |
In further solvent(s) under argon, soln. of Me2Cd in (n-C8H17)3P and soln. of ((CH3)3Si)2Se in (n-C8H17)3P are combined and added under vigorous stirring to (n-C8H17)3PO at 300°C, heat removed (180°C) then gradually raised to 230-260°C; cooled to 60°C, methanol added, centrifugated, dispersed (1-butanol), centrifugated, precipitate discarded, methanol added to the supernatant, flocculate rinsed (methanol), dried (vacuum); |
bis(trimethylsilyl)selenide
Conditions | Yield |
---|---|
In chloroform all manipulations under dry, O2-free Ar; soln. of compds. reacted at room temp. for 24 h; solvent evapd. in vac., separated by chromy., both compds. recrystd. from CHCl3/CHCl2/hexane at -78°C; | A 90.9% B 7.4% |
bis(trimethylsilyl)selenide
Conditions | Yield |
---|---|
In dichloromethane byproducts: Me3SiCl, bis(diphenylphosphanyl)ethane; room temp.; stirred, 4 h; layered with n-heptane; crystd., 1 d; elem. anal.; | 90% |
Conditions | Yield |
---|---|
In tetrahydrofuran addn. of a soln. of (Me3Si)2Se in THF to a soln. of (Cp(CO)2Fe)SnCl3 in THF under Ar, color changes from deep brown to light red;; after 24 h evapn. (vac.), recrystn. from THF; elem. anal.;; | 88.8% |
Conditions | Yield |
---|---|
In toluene under N2 atm. (Me3Si)2Se was added at room temp. to soln. (Me3Si)2C(Ph)C(Me3Si)NGaCl2 in toluene and stirred for 2 h; solvent was removed in vacuo, residue was crystd. from toluene; elem. anal.; | 88% |
ethanol
bis(trimethylsilyl)selenide
copper (I) acetate
diethyl-phenyl-phosphine
(diethyl(phenyl)phosphine)3CuSeH
Conditions | Yield |
---|---|
In diethyl ether (N2); Cu salt and P(C2H5)2C6H5 dissolved in Et2O, cooled to -60°C, Se(Si(CH3)3)2 added, stirred for 2 h with warming to ca -10°C; EtOH added, crystd. at -80°C for 12 h; | 88% |
Conditions | Yield |
---|---|
In toluene at 20℃; for 16h; Schlenk technique; | 88% |
bis(trimethylsilyl)selenide
Conditions | Yield |
---|---|
With water In tetrahydrofuran at -35 - 20℃; | 87% |
Conditions | Yield |
---|---|
Stage #1: tetrahydrofuran; n-butyllithium; bis(trimethylsilyl)selenide at 0 - 20℃; for 1.5h; Schlenk technique; Stage #2: indium(III) chloride In diethyl ether at -78 - 20℃; for 18h; Schlenk technique; | 87% |
3,5-Lutidine
bis(trimethylsilyl)selenide
zinc diacetate
[(3,5-lutidine)2zinc(SeSiMe3)2]
Conditions | Yield |
---|---|
In chloroform under N2 atm. Zn(OAc)2 was dissolved in CHCl3 and 3,5-lutidine, CHCl3 was removed in vacuo and replaced with THF after cooling to -78°C, Se(SiMe3)2 was added; soln. was concd. in vacuo at 0°C THF was removed in vacuo, cold pentane was added, ppt. was washed with pentane and dried in vacuo (0°C) for 30 min, recrystn. from CHCl3-pentane at -80°C for 2 days; | 86% |
In dichloromethane Se(SiMe3)2 added to soln. of Zn(CH3COO)2 solublized by 3,5-lutidine in CH2Cl2 at -78°C; |
bis(trimethylsilyl)selenide
copper (I) acetate
diethyl-phenyl-phosphine
(diethyl(phenyl)phosphine)3Cu(trimethylsilylselenolato)
Conditions | Yield |
---|---|
In diethyl ether; hexane byproducts: CH3C(O)OSi(CH3)3; (N2); Cu salt dissolved in Et2O and hexane, P(C2H5)2C6H5 added, cooled to -60°C, Se(Si(CH3)3)2 added, warmed slowly to -10°C; crystd. at -80°C; | 86% |
bis(trimethylsilyl)selenide
P-(2,6-bis-(2,4,6-trimethylphenyl)phenyl)-P,P-dichlorophosphane
Conditions | Yield |
---|---|
In tetrahydrofuran Inert atmosphere; | A 86% B 10% |
bis(trimethylsilyl)selenide
Conditions | Yield |
---|---|
In tetrahydrofuran addn. of a soln. of (Me3Si)2Se in THF to a soln. of (Cp(CO)2Fe)2SnCl2 in THF under Ar, color changed from dark red to deep brown;; after 24 h evapn. (vac.), fractionated recrystn. from THF; elem. anal.;; | A 85% B 3% |
The Bis(trimethylsilyl)selenide is an organic compound with the formula C6H18SeSi2. The systematic name of this chemical is hexamethyldisilaselenane. With the CAS registry number 4099-46-1, it is also named as 1,1,1,3,3,3-Hexamethyldisilaselenane.
Physical properties about Bis(trimethylsilyl)selenide are: (1)ACD/LogP: 3.79; (2)ACD/LogD (pH 5.5): 3.79; (3)ACD/LogD (pH 7.4): 3.79; (4)ACD/BCF (pH 5.5): 443.22; (5)ACD/BCF (pH 7.4): 443.22; (6)ACD/KOC (pH 5.5): 2729.33; (7)ACD/KOC (pH 7.4): 2729.33; (8)#Freely Rotating Bonds: 2; (9)Flash Point: 59.6 °C; (10)Enthalpy of Vaporization: 39.44 kJ/mol; (11)Boiling Point: 175 °C at 760 mmHg; (12)Vapour Pressure: 1.58 mmHg at 25°C.
Preparation: this chemical can be prepared by chloro-trimethyl-silane. This reaction will need reagent bis(bromomagnesium) selenide and solvent diethyl ether. The reaction time is 2 hours by heating. The yield is about 27%.
Uses of Bis(trimethylsilyl)selenide: it can be used to produce iodo-trimethyl-silane. It will need reagent iodine and solvent m-xylene. The yield is about 94%.
You can still convert the following datas into molecular structure:
(1)SMILES: [Se]([Si](C)(C)C)[Si](C)(C)C
(2)InChI: InChI=1/C6H18SeSi2/c1-8(2,3)7-9(4,5)6/h1-6H3
(3)InChIKey: FKIZDWBGWFWWOV-UHFFFAOYAT
(4)Std. InChI: InChI=1S/C6H18SeSi2/c1-8(2,3)7-9(4,5)6/h1-6H3
(5)Std. InChIKey: FKIZDWBGWFWWOV-UHFFFAOYSA-N
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