Product Name

  • Name

    [BIS(TRIMETHYLSILYL)]SELENIDE

  • EINECS
  • CAS No. 4099-46-1
  • Article Data14
  • CAS DataBase
  • Density 0,9 g/cm3
  • Solubility
  • Melting Point -7 °C
  • Formula C6H18SeSi2
  • Boiling Point 175 °C at 760 mmHg
  • Molecular Weight 225.34
  • Flash Point 59.6 °C
  • Transport Information
  • Appearance clear colourless to yellow liquid
  • Safety
  • Risk Codes
  • Molecular Structure Molecular Structure of 4099-46-1 ([BIS(TRIMETHYLSILYL)]SELENIDE)
  • Hazard Symbols
  • Synonyms Bis(trimethylsilyl)selenide,98%;[BIS(TRIMETHYLSILYL)]SELENIDE;
  • PSA 0.00000
  • LogP 2.36040

Synthetic route

chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

Conditions
ConditionsYield
With selenium; lithium triethylborohydride In tetrahydrofuran for 2h; Ambient temperature;95%
With dilithium diselenide In tetrahydrofuran80%
With lithium selenide; boron trifluoride diethyl etherate In tetrahydrofuran for 4h; Ambient temperature;78%
trimethylsilyl bromide
2857-97-8

trimethylsilyl bromide

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

Conditions
ConditionsYield
With seleno-aluminate for 3h; Ambient temperature;62%
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

2,4,6-trimethylphenyl bromide
576-83-0

2,4,6-trimethylphenyl bromide

A

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

B

2,4,6-Trimethylphenyl-trimethylsilyl-selenid

2,4,6-Trimethylphenyl-trimethylsilyl-selenid

Conditions
ConditionsYield
Yield given. Multistep reaction;
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

phenylmagnesium bromide

phenylmagnesium bromide

A

phenyl trimethylsilyl selenide
33861-17-5

phenyl trimethylsilyl selenide

B

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

Conditions
ConditionsYield
With selenium 1.) ether, r.t., 12 h; 2.) ether, r.t., 24 h; Yield given. Multistep reaction. Yields of byproduct given;
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

A

phenyl trimethylsilyl selenide
33861-17-5

phenyl trimethylsilyl selenide

B

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

Conditions
ConditionsYield
With selenium; phenylmagnesium bromide 1.) ether, r.t., 12 h; 2.) ether, r.t., 24 h; Yield given. Multistep reaction. Yields of byproduct given;
tert-butylbis(trimethylsilyl)phosphine
42491-33-8

tert-butylbis(trimethylsilyl)phosphine

A

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

B

t-butyl-perselenophosphonic anhydride
122631-90-7

t-butyl-perselenophosphonic anhydride

Conditions
ConditionsYield
With selenium
phenylmagnesium bromide

phenylmagnesium bromide

A

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

B

diphenylselenide
1132-39-4

diphenylselenide

C

diphenyl diselenide
1666-13-3

diphenyl diselenide

Conditions
ConditionsYield
With selenium; chloro-trimethyl-silane 1.) diethyl ether, 12 h, 2.) diethyl ether, 24 h; Yield given. Multistep reaction. Yields of byproduct given;
chloro-trimethyl-silane
75-77-4

chloro-trimethyl-silane

lithium n-butylselenolate
55163-69-4

lithium n-butylselenolate

A

Di-n-butyl selenide
14835-66-6

Di-n-butyl selenide

B

butyl(trimethylsilyl)selane
34044-18-3

butyl(trimethylsilyl)selane

C

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

Conditions
ConditionsYield
In tetrahydrofuran; hexane at 20℃; Product distribution; Substitution;
bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

A

1,1,1,3,3,3-hexamethyl-disilazane
999-97-3

1,1,1,3,3,3-hexamethyl-disilazane

B

Natrium-trimethylsilylselanolat

Natrium-trimethylsilylselanolat

Conditions
ConditionsYield
With ammonia; sodiumA n/a
B 100%
With ammonia; sodium
{WCl4(NCl)}2

{WCl4(NCl)}2

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

{CH3CN-WCl4(μ-dinitridoselenato)Cl4W-NCCH3}

{CH3CN-WCl4(μ-dinitridoselenato)Cl4W-NCCH3}

Conditions
ConditionsYield
With acetonitrile In acetonitrile byproducts: (CH3)3SiCl; W-complex added to (Me3Si)2Se in CH3CN, refluxed for 4 h; solvent removed under vacuum; elem. anal., IR;100%
tetrahydrofuran
109-99-9

tetrahydrofuran

gallium(I) bromide

gallium(I) bromide

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

Ga24Se2Br18*12C4H8O

Ga24Se2Br18*12C4H8O

Conditions
ConditionsYield
In tetrahydrofuran; toluene byproducts: BrSiMe3; Se-compd. in THF added dropwise to GaBr in toluene/THF (3:1) at room temp., heated at reflux for 2 h; separated, concentrated in vac., kept at 50°C for a few days;99%
bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

diethylzinc
557-20-0

diethylzinc

zinc(II) selenide

zinc(II) selenide

Conditions
ConditionsYield
In 1,1,1-trichloroethane byproducts: Si(C2H5)(CH3)3; stirred at 75°C for 45 min; filtered, annealed (400°C, 18 h);97%
tris-n-propylphosphine
2234-97-1

tris-n-propylphosphine

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

[Cu(P((CH2)2CH3)3)3SeSi(CH3)3]
265668-67-5

[Cu(P((CH2)2CH3)3)3SeSi(CH3)3]

Conditions
ConditionsYield
In diethyl ether; hexane byproducts: CH3CO2Si(CH3)3; 4 equiv of P(C3H7)3 were added to a soln. of CuO2CH3 in hexane-Et2O, cooled to -45°C, ((CH3)3Si)2Se was added, the mixt. was allowed to warm slowly with stirring to -15°C, stirredfor 2 h (N2); the mother liquor was removed, the crystals were dried under vac. at 0°C for 2 h, recrystd. from cold Et2O; elem. anal.;97%
In diethyl ether CuOAc dissolved in ether with 4 equiv. propylphosphane, cooled to -40°C, 1 equiv Se(SiMe3)2 was added, warmed to -5°C with stirring for 3 h, solvent evapd.;80%
bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

diphenylselenoxide
7304-91-8

diphenylselenoxide

A

Hexamethyldisiloxane
107-46-0

Hexamethyldisiloxane

B

diphenylselenide
1132-39-4

diphenylselenide

Conditions
ConditionsYield
In tetrahydrofuran for 1h; Product distribution; Ambient temperature; var. selenium, tellurium and sulfur oxides, other solvents;A n/a
B 96%
bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

silver(I) acetate
563-63-3

silver(I) acetate

ethyl-diphenyl-phosphane
607-01-2

ethyl-diphenyl-phosphane

(diphenyl(ethyl)phosphine)3Ag(trimethylsilylselenolato)
935681-91-7

(diphenyl(ethyl)phosphine)3Ag(trimethylsilylselenolato)

Conditions
ConditionsYield
In diethyl ether byproducts: CH3C(O)OSi(CH3)3; (N2); Ag salt and P(C6H5)2C2H5 dissolved in Et2O, cooled to -70°C, Se(Si(CH3)3)2 added, stirred for ca 1 h; pptd. with cold hexane, sepd., washed (hexane), dried (vac.);96%
bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

ethyl-diphenyl-phosphane
607-01-2

ethyl-diphenyl-phosphane

(diphenyl(ethyl)phosphine)3Cu(trimethylsilylselenolato)
935681-85-9

(diphenyl(ethyl)phosphine)3Cu(trimethylsilylselenolato)

Conditions
ConditionsYield
In hexane; chloroform byproducts: CH3C(O)OSi(CH3)3; (N2); Cu salt dissolved with P(C6H5)2C2H5 in CHCl3 and hexane, cooled to-60°C, Se(Si(CH3)3)2 added, warmed slowly to -10°C; crystd. at -80°C for 4 d;96%
bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

1,3-dimethylimidazolium tert-butylthiolate

1,3-dimethylimidazolium tert-butylthiolate

1,3-dimethylimidazolium trimethylsilylselenolate

1,3-dimethylimidazolium trimethylsilylselenolate

Conditions
ConditionsYield
In tetrahydrofuran at 0 - 20℃; for 1h; Schlenk technique;96%
bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

phenyltin trichloride
1124-19-2

phenyltin trichloride

C24H20Se6Sn4

C24H20Se6Sn4

Conditions
ConditionsYield
In toluene at 20℃; for 0.0833333h; Schlenk technique;96%
bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

trimethylsilyl iodide
16029-98-4

trimethylsilyl iodide

Conditions
ConditionsYield
With iodine In m-xylene94%
Cl2Sn{Co(CO)4}2
15492-24-7

Cl2Sn{Co(CO)4}2

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

((CO)4Co)4Sn2Se2

((CO)4Co)4Sn2Se2

Conditions
ConditionsYield
In tetrahydrofuran Ar or N2 atmosphere; addn. of Sn-org. compd. to soln. of Co-compd. in THF, stirring (12 h, room temp.); removal of volatiles, repeated washing (n-heptane), recrystn. (toluene/n-hexane); elem. anal.;93%
N,N,N,N,-tetramethylethylenediamine
110-18-9

N,N,N,N,-tetramethylethylenediamine

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

zinc diacetate
557-34-6

zinc diacetate

[(N,N'-tetramethylethylenediamine)Zn(SeSiMe3)2]
499106-44-4

[(N,N'-tetramethylethylenediamine)Zn(SeSiMe3)2]

Conditions
ConditionsYield
In tetrahydrofuran under N2 atm. to soln. Zn(OAc)2 in THF TMEDA and Se(SiMe3)2 were added at 0°C and stirred for 15 min; THF was removed in vacuo, residue was washed with pentane and dried for 2 h at 0°C, crystn. from hexane-THF (3:1) at -80°C;92%
bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

dimethylcadmium
506-82-1

dimethylcadmium

cadmium(II) selenide

cadmium(II) selenide

Conditions
ConditionsYield
In dichloromethane byproducts: Si(CH3)4; stirred at 25°C for 4 h; filtered, powder annealed in vacuo (400°C, 4 h); X-ray powder diffraction;91%
In toluene byproducts: Si(CH3)4; stirred at 25°C, reaction is fairly slow, taked days to go compled; proton NMR;
In further solvent(s) under argon, soln. of Me2Cd in (n-C8H17)3P and soln. of ((CH3)3Si)2Se in (n-C8H17)3P are combined and added under vigorous stirring to (n-C8H17)3PO at 300°C, heat removed (180°C) then gradually raised to 230-260°C; cooled to 60°C, methanol added, centrifugated, dispersed (1-butanol), centrifugated, precipitate discarded, methanol added to the supernatant, flocculate rinsed (methanol), dried (vacuum);
tetrachloro(η-pentamethylcyclopentadienyl)tungsten(V)

tetrachloro(η-pentamethylcyclopentadienyl)tungsten(V)

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

A

anti-[(η(5)-pentamethyl-cyclopentadienyl)W(Se)(μ-Se)]2

anti-[(η(5)-pentamethyl-cyclopentadienyl)W(Se)(μ-Se)]2

B

(η(5)-pentamethyl-cyclopentadienyl)W(Se)(μ-Se)Cl2

(η(5)-pentamethyl-cyclopentadienyl)W(Se)(μ-Se)Cl2

Conditions
ConditionsYield
In chloroform all manipulations under dry, O2-free Ar; soln. of compds. reacted at room temp. for 24 h; solvent evapd. in vac., separated by chromy., both compds. recrystd. from CHCl3/CHCl2/hexane at -78°C;A 90.9%
B 7.4%
[(AuCl)2(bis(diphenylphosphanyl)ethane)]

[(AuCl)2(bis(diphenylphosphanyl)ethane)]

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

[Au18Se8(bis(diphenylphosphanyl)ethane)6]Cl2

[Au18Se8(bis(diphenylphosphanyl)ethane)6]Cl2

Conditions
ConditionsYield
In dichloromethane byproducts: Me3SiCl, bis(diphenylphosphanyl)ethane; room temp.; stirred, 4 h; layered with n-heptane; crystd., 1 d; elem. anal.;90%
[Fe(η-cyclopentadienyl)(CO)2(SnCl3)]

[Fe(η-cyclopentadienyl)(CO)2(SnCl3)]

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

{C5H5(CO)2Fe}4Sn4Se6

{C5H5(CO)2Fe}4Sn4Se6

Conditions
ConditionsYield
In tetrahydrofuran addn. of a soln. of (Me3Si)2Se in THF to a soln. of (Cp(CO)2Fe)SnCl3 in THF under Ar, color changes from deep brown to light red;; after 24 h evapn. (vac.), recrystn. from THF; elem. anal.;;88.8%
(Me3Si)2C(Ph)C(Me3Si)NGaCl2

(Me3Si)2C(Ph)C(Me3Si)NGaCl2

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

[(Me3Si)2C(Ph)C(Me3Si)NGa(μ-Se)]2

[(Me3Si)2C(Ph)C(Me3Si)NGa(μ-Se)]2

Conditions
ConditionsYield
In toluene under N2 atm. (Me3Si)2Se was added at room temp. to soln. (Me3Si)2C(Ph)C(Me3Si)NGaCl2 in toluene and stirred for 2 h; solvent was removed in vacuo, residue was crystd. from toluene; elem. anal.;88%
ethanol
64-17-5

ethanol

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

diethyl-phenyl-phosphine
1605-53-4

diethyl-phenyl-phosphine

(diethyl(phenyl)phosphine)3CuSeH
935681-92-8

(diethyl(phenyl)phosphine)3CuSeH

Conditions
ConditionsYield
In diethyl ether (N2); Cu salt and P(C2H5)2C6H5 dissolved in Et2O, cooled to -60°C, Se(Si(CH3)3)2 added, stirred for 2 h with warming to ca -10°C; EtOH added, crystd. at -80°C for 12 h;88%
bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

C11H13Cl3O2Sn

C11H13Cl3O2Sn

C44H52O8Se6Sn4

C44H52O8Se6Sn4

Conditions
ConditionsYield
In toluene at 20℃; for 16h; Schlenk technique;88%
bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

Cu(1+)*C2H3O2(1-)*2C9H21P

Cu(1+)*C2H3O2(1-)*2C9H21P

[(Me2Ga)6Se(SeSiMe3)4]

[(Me2Ga)6Se(SeSiMe3)4]

[(iPr3PCu)4(MeGa)4Se6]

[(iPr3PCu)4(MeGa)4Se6]

Conditions
ConditionsYield
With water In tetrahydrofuran at -35 - 20℃;87%
tetrahydrofuran
109-99-9

tetrahydrofuran

indium(III) chloride

indium(III) chloride

n-butyllithium
109-72-8, 29786-93-4

n-butyllithium

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

Li[In(SeSiMe3)4]*0.5THF

Li[In(SeSiMe3)4]*0.5THF

Conditions
ConditionsYield
Stage #1: tetrahydrofuran; n-butyllithium; bis(trimethylsilyl)selenide at 0 - 20℃; for 1.5h; Schlenk technique;
Stage #2: indium(III) chloride In diethyl ether at -78 - 20℃; for 18h; Schlenk technique;
87%
3,5-Lutidine
591-22-0

3,5-Lutidine

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

zinc diacetate
557-34-6

zinc diacetate

[(3,5-lutidine)2zinc(SeSiMe3)2]
810667-24-4

[(3,5-lutidine)2zinc(SeSiMe3)2]

Conditions
ConditionsYield
In chloroform under N2 atm. Zn(OAc)2 was dissolved in CHCl3 and 3,5-lutidine, CHCl3 was removed in vacuo and replaced with THF after cooling to -78°C, Se(SiMe3)2 was added; soln. was concd. in vacuo at 0°C THF was removed in vacuo, cold pentane was added, ppt. was washed with pentane and dried in vacuo (0°C) for 30 min, recrystn. from CHCl3-pentane at -80°C for 2 days;86%
In dichloromethane Se(SiMe3)2 added to soln. of Zn(CH3COO)2 solublized by 3,5-lutidine in CH2Cl2 at -78°C;
bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

diethyl-phenyl-phosphine
1605-53-4

diethyl-phenyl-phosphine

(diethyl(phenyl)phosphine)3Cu(trimethylsilylselenolato)
935681-84-8

(diethyl(phenyl)phosphine)3Cu(trimethylsilylselenolato)

Conditions
ConditionsYield
In diethyl ether; hexane byproducts: CH3C(O)OSi(CH3)3; (N2); Cu salt dissolved in Et2O and hexane, P(C2H5)2C6H5 added, cooled to -60°C, Se(Si(CH3)3)2 added, warmed slowly to -10°C; crystd. at -80°C;86%
bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

P-(2,6-bis-(2,4,6-trimethylphenyl)phenyl)-P,P-dichlorophosphane
185522-84-3

P-(2,6-bis-(2,4,6-trimethylphenyl)phenyl)-P,P-dichlorophosphane

A

C48H50P2Se2

C48H50P2Se2

B

C72H75P3Se3

C72H75P3Se3

Conditions
ConditionsYield
In tetrahydrofuran Inert atmosphere;A 86%
B 10%
bis(η5-cyclopentadienyldicarbonyliron)stannane dichloride

bis(η5-cyclopentadienyldicarbonyliron)stannane dichloride

bis(trimethylsilyl)selenide
4099-46-1

bis(trimethylsilyl)selenide

A

{(C5H5)(CO)2Fe}4Sn2Se2

{(C5H5)(CO)2Fe}4Sn2Se2

B

{C5H5(CO)2Fe}4Sn4Se6

{C5H5(CO)2Fe}4Sn4Se6

Conditions
ConditionsYield
In tetrahydrofuran addn. of a soln. of (Me3Si)2Se in THF to a soln. of (Cp(CO)2Fe)2SnCl2 in THF under Ar, color changed from dark red to deep brown;; after 24 h evapn. (vac.), fractionated recrystn. from THF; elem. anal.;;A 85%
B 3%

Bis(trimethylsilyl)selenide Specification

The Bis(trimethylsilyl)selenide is an organic compound with the formula C6H18SeSi2. The systematic name of this chemical is hexamethyldisilaselenane. With the CAS registry number 4099-46-1, it is also named as 1,1,1,3,3,3-Hexamethyldisilaselenane.

Physical properties about Bis(trimethylsilyl)selenide are: (1)ACD/LogP: 3.79; (2)ACD/LogD (pH 5.5): 3.79; (3)ACD/LogD (pH 7.4): 3.79; (4)ACD/BCF (pH 5.5): 443.22; (5)ACD/BCF (pH 7.4): 443.22; (6)ACD/KOC (pH 5.5): 2729.33; (7)ACD/KOC (pH 7.4): 2729.33; (8)#Freely Rotating Bonds: 2; (9)Flash Point: 59.6 °C; (10)Enthalpy of Vaporization: 39.44 kJ/mol; (11)Boiling Point: 175 °C at 760 mmHg; (12)Vapour Pressure: 1.58 mmHg at 25°C.

Preparation: this chemical can be prepared by chloro-trimethyl-silane. This reaction will need reagent bis(bromomagnesium) selenide and solvent diethyl ether. The reaction time is 2 hours by heating. The yield is about 27%.

Uses of Bis(trimethylsilyl)selenide: it can be used to produce iodo-trimethyl-silane. It will need reagent iodine and solvent m-xylene. The yield is about 94%.

You can still convert the following datas into molecular structure:
(1)SMILES: [Se]([Si](C)(C)C)[Si](C)(C)C
(2)InChI: InChI=1/C6H18SeSi2/c1-8(2,3)7-9(4,5)6/h1-6H3
(3)InChIKey: FKIZDWBGWFWWOV-UHFFFAOYAT
(4)Std. InChI: InChI=1S/C6H18SeSi2/c1-8(2,3)7-9(4,5)6/h1-6H3
(5)Std. InChIKey: FKIZDWBGWFWWOV-UHFFFAOYSA-N

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