Conditions | Yield |
---|---|
In hexane thin foil of Al was suspended in degassed n-hexane under argon, 1.5 equiv. I2 was added, mixt. was boiled under reflux for 1-3 h; filtered into a heated receiver; elem. anal.; | 96% |
In further solvent(s) sheet aluminium in I2/ethyl iodide soln.;; impurities of I2;; | |
In neat (no solvent) addn. of Al to molten I2, ignition and melting of the metal;; |
iodine
glycerol
aluminium
A
hydrogen
B
aluminium(III) iodide
Conditions | Yield |
---|---|
In water in glycerine-soln. on heating;; |
Conditions | Yield |
---|---|
In water byproducts: H2, Al(OH)3; |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: H2; | |
In neat (no solvent) byproducts: H2; |
Conditions | Yield |
---|---|
heating till AgI softens, part of AlI3 is sublimated; | |
heating till AgI softens, part of AlI3 is sublimated; |
Conditions | Yield |
---|---|
In neat (no solvent) mixt. of the starting materials heated in evacuated sealed quartz tubes to 500-900°C; decompn. of educts ocurrs, AlI3 sublimates off; | A 0% B n/a |
Conditions | Yield |
---|---|
In neat (no solvent) mixt. of the starting materials heated in evacuated sealed quartz tubes to 500-900°C; decompn. of educts ocurrs, AlI3 sublimates off; | A 0% B n/a |
Conditions | Yield |
---|---|
In neat (no solvent) formation at reaction of metallic Al with molten SnI4;; |
aluminium(III) iodide
Conditions | Yield |
---|---|
In neat (no solvent) at 381°C;; |
Conditions | Yield |
---|---|
With aluminium in stoichiometric ratio of educts, 325°C in closed evacuated tube; removal of AlI3 by sublimation at 250 °C; | |
With Al in stoichiometric ratio of educts, 325°C in closed evacuated tube; removal of AlI3 by sublimation at 250 °C; |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) thermal decompn. by heating at 385°C for 48 h in an evacuated sealed glass ampoule; AlI3 sublimates to the cold end of the ampoule; |
Conditions | Yield |
---|---|
In tetrahydrofuran byproducts: C4H9I; iodide-ion was also formed; |
Conditions | Yield |
---|---|
In neat (no solvent) byproducts: Al2S3; heating a mixture of molten AlI3 and Bi2S3 in an evacuated tube at 230°C for 48 hours;; sublimation in vacuum at 400°C;; | 100% |
In neat (no solvent) byproducts: Al2S3; heating a mixture of molten AlI3 and Bi2S3 in an evacuated tube at 230°C for 48 hours;; sublimation in vacuum at 400°C;; | 100% |
Conditions | Yield |
---|---|
In carbon disulfide exclusion of moisture; SbI3 and AlI3 (equimolar ratio) in CS2 are heated under reflux for 2 h; crystn. at room temp., complete at -20°C within 1 d; | 100% |
Conditions | Yield |
---|---|
In benzene under N2, dropwise addn. of thiol soln. to a suspension of AlI3 in benzene, dissoln. of AlI3, stirred for 15 min at room temp.; evapn. of solvent, dried in vac. at room temp. for 3h, elem. anal.; | 100% |
Conditions | Yield |
---|---|
In benzene under N2, dropwise addn. of thiol soln. to a suspension of AlI3 in benzene, dissoln. of AlI3, stirred for 15 min at room temp.; evapn. of solvent, dried in vac. at room temp. for 3h, elem. anal.; | 100% |
Trimethyl(methylthio)silane
aluminium(III) iodide
aluminium triiodide*trimethylsilyl methyl sulphide
Conditions | Yield |
---|---|
In benzene a benzene soln. of Me3SiSMe was added dropwise under N2 to a suspn. of AlI3 in benzene, mixt. was stirred for 15 min at room temp.; solvent was evapd.; elem. anal.; | 100% |
Conditions | Yield |
---|---|
In benzene under N2, dropwise addn. of thiol soln. to a suspension of AlI3 in benzene, dissoln. of AlI3, stirred for 15 min at room temp.; evapn. of solvent, dried in vac. at room temp. for 3h, elem. anal.; | 100% |
(ethylthio)trimethylsilane
aluminium(III) iodide
aluminium triiodide*trimethylsilyl ethyl sulphide
Conditions | Yield |
---|---|
In benzene a benzene soln. of Me3SiSEt was added dropwise under N2 to a suspn. of AlI3 in benzene, mixt. was stirred for 15 min at room temp.; solvent was evapd.; elem. anal.; | 100% |
Conditions | Yield |
---|---|
In neat (no solvent) Ar atm.; molar ratio Te:I2:AlI3 1:2:1, heating (150-200°C, several hours); | 100% |
acridine
bis(2,2,6,6-tetramethylpiperidino)aluminium iodide
aluminium(III) iodide
(2,2,6,6-tetramethylpiperidino)2Al(acridine) tetraiodoaluminate
Conditions | Yield |
---|---|
In dichloromethane inert atmosphere, addn. of soln. of acridine to soln. of piperidino compound at -78°C, -78°C (1 h), addn. of AlI3, slow warming toroom temp.; filtration, removement of volatiles (vacuum); elem. anal.; | 99% |
(2,2,6,6-tetramethylpiperidino)2AlI(isoquinoline)
aluminium(III) iodide
(2,2,6,6-tetramethylpiperidino)2Al(isoquinoline) tetraiodoaluminate
Conditions | Yield |
---|---|
In toluene inert atmosphere, addn. of soln. of AlI3 to soln. of piperidino compoundat 5-10°C, stirring (1.5 h); filtration, concn. of filtrate to dryness (vacuum); elem. anal.; | 99% |
bis(tricyclohexylphosphine)platinum(0)
aluminium(III) iodide
Pt(P(C6H11)3)2AlI3
Conditions | Yield |
---|---|
In benzene AlBr3 was added to a soln. of Pt-complex in benzene, the soln. was kept at room temp. for 24 h; | 99% |
Conditions | Yield |
---|---|
In neat (no solvent, solid phase) (Ar); solid state reaction; equimolar mixt. of TlI, and AlI3 sealed under vac. in glass ampoules; heated with 10°C/h to 150°C for 48 h; cooled to 25°C with 2.degre.C/h; detn. by XRD; | 99% |
hydrogen iodide
aluminium(III) iodide
1,1,3,3-tetraphenyltrisilan
tetraiodotrisilane
Conditions | Yield |
---|---|
In benzene byproducts: C6H6; N2-atmosphere; passing hydrogen halide through soln. of silane contg. little Al-halide (gentle heating or cooling when necessary) to end of hydrogen halide consumption; evapn. (vac.), heptane addn., decantation from Al-halide, evapn.; elem. anal.; | 98% |
(1R,2R)-(-)-N,N'-bis(3,5-di-tert-butylsalicydene)-1,2-cyclohexanediaminocobalt(II)
aluminium(III) iodide
Conditions | Yield |
---|---|
In dichloromethane; water addn. of Co(C6H10(NCHC6H2O(t-Bu)2)2) (1 equiv.) to soln. of AlI3 (1 equiv.) in CH2Cl2 and H2O; stirring at room temp. for 1 h; concn. under reduced pressure, treatment with H2O and CH2Cl2; | 98% |
1,1,2,2,3,3-hexaphenyltrisilane
hydrogen iodide
aluminium(III) iodide
I2HSiSiI2SiHI2
Conditions | Yield |
---|---|
In benzene byproducts: C6H6; N2-atmosphere; passing hydrogen halide through soln. of silane contg. little Al-halide (gentle heating or cooling when necessary) to end of hydrogen halide consumption; evapn. (vac.), heptane addn., decantation from Al-halide, evapn.; elem. anal.; | 97% |
4-tert-butylpyridine
bis(2,2,6,6-tetramethylpiperidino)aluminium iodide
aluminium(III) iodide
AlI3(4-tert-butylpyridine)
Conditions | Yield |
---|---|
In hexane inert atmosphere, addn. of tert-butylpyridine to soln. of piperidino compound, addn. of AlI3 at room temp.; crystn. (overnight), filtration, washing (pentane); elem. anal.; | 96% |
2,2-dimethylpropylidynephosphine
aluminium(III) iodide
Conditions | Yield |
---|---|
In dichloromethane (argon); -78°C to room temp., stirring (2 h); removal of solvent (25°C/E-3 mbar); | 95% |
CH3NC(CH3)CHC(CH3)N(CH3)AlH2
aluminium(III) iodide
C6H5NC(CH3)CHC(CH3)NC6H5AlI2
Conditions | Yield |
---|---|
In dichloromethane under inert gas, 2 equiv. of Me3NHI was added to CH2Cl2 soln. of Al-complex at -20 °C., stirring for 3 h, warming up to room temp., stirring at room temp. for 8 h; solvent was removed in vac., residue was three times extd. with toluene,solvent was removed, solid was recrystd. from toluene/pentane at -30 .d egree.C, elem. anal.; | 94% |
hydrogen iodide
aluminium(III) iodide
1,1,2,2-Tetraphenyl-trisilane
I2HSiSiI2SiH3
Conditions | Yield |
---|---|
In benzene byproducts: C6H6; N2-atmosphere; passing hydrogen halide through soln. of silane contg. little Al-halide (gentle heating or cooling when necessary) to end of hydrogen halide consumption; evapn. (vac.), heptane addn., decantation from Al-halide, evapn.; elem. anal.; | 94% |
hydrogen iodide
aluminium(III) iodide
1,1,2,2,3-Pentaphenyl-trisilane
I2HSiSiI2SiH2I
Conditions | Yield |
---|---|
In benzene byproducts: C6H6; N2-atmosphere; passing hydrogen halide through soln. of silane contg. little Al-halide (gentle heating or cooling when necessary) to end of hydrogen halide consumption; evapn. (vac.), heptane addn., decantation from Al-halide, evapn.; elem. anal.; | 94% |
Conditions | Yield |
---|---|
In benzene under N2, CH3SH introduced in a suspension of AlI3 for 7 min, dissoln. of AlI3, stirred for 15 min at room temp.; evapn., pptn., filtered, washed (hexane), dried in vac., elem. anal.; | 93% |
Conditions | Yield |
---|---|
In benzene lead dithiolate was added to a suspn. of AlI3 in benzene under N2, mixt. was heated under reflux for 2 h; filtered, filtrate was concd., ppt. collected by filtration, washed with pentane, dried under high vac.; elem. anal.; | 93% |
aluminium(III) iodide
phosphorous triiodide
P2I5(1+)*AlI4(1-) = [P2I5][AlI4]
Conditions | Yield |
---|---|
In carbon disulfide (N2); stirring (room temp., 24 h); solvent removal (dynamic vac.); | 92% |
Conditions | Yield |
---|---|
In diethyl ether conventional Schlenk technique under dried Ar: addn. (dropwise) of 22mmol acetone in 10ml diethylether to a stirred, recently prepared, soln. of 10mmol AlI3 in 100ml diethylether, further stirring of mixture for 5min;; filtration, washing and drying in vacuo; elem. anal.;; | 91% |
In carbon disulfide conventional Schlenk technique under dried Ar: addn. of acetone to soln. of aluminium (III) iodide in carbondisulfide;; elem. anal.; 1H-NMR;; | >90 |
lead(II) ethyl sulfide
aluminium(III) iodide
Conditions | Yield |
---|---|
In benzene lead dithiolate was added to a suspn. of AlI3 in benzene under N2, mixt. was heated under reflux for 2 h; filtered, filtrate was concd., ppt. collected by filtration, washed with pentane, dried under high vac.; elem. anal.; | 89% |
tris(2,4,6-trimethylphenyl)phosphine
iodine
aluminium(III) iodide
[Mes3PI][AlI4]
Conditions | Yield |
---|---|
In toluene under N2; stirred for 30 min; solvent removed (vac.), solid stirred in hexanes for 10 min, filtered onglass frit, washed with hexanes, dried; | 89% |
diphosphorus tetraiodide
iodine
aluminium(III) iodide
P2I5(1+)*AlI4(1-) = [P2I5][AlI4]
Conditions | Yield |
---|---|
In carbon disulfide (N2); stirring (room temp., 24 h); solvent removal (dynamic vac.); | 88% |
(2,2,6,6-tetramethylpiperidino)2AlI(pyridine)
aluminium(III) iodide
(2,2,6,6-tetramethylpiperidino)AlI2(pyridine)
Conditions | Yield |
---|---|
In toluene inert atmosphere, addn. of AlI3 to soln. of piperidino compound at 0°C, stirring (overnight); filtration, concn. to dryness (vacuum), crystn. (temperatures up to 35°C (several days, storage (1 week)), washing (pentane); elem. anal.; | 88% |
carbon dioxide
tris(2,4,6-trimethylphenyl)phosphine
aluminium(III) iodide
Conditions | Yield |
---|---|
In further solvent(s) in bromobenzene; for 5 min; pptd. using hexanes, filtered, dried on a frit; | 87% |
The cas register number of Aluminium iodide is 7784-23-8. It also can be called as Aluminum triiodide and the Systematic name about this chemical is triiodoalumane. Physical properties about Aluminium iodide are: (1)#H bond acceptors: 0; (2)#H bond donors: 0; (3)#Freely Rotating Bonds: 0; (4)Polar Surface Area: 0Å2. It is used as catalyst in the organic Reactions.
When you are using this chemical, please be cautious about it as the following:
It is reacts violently with water and causes burns. Limited evidence of a carcinogenic effect. It may cause sensitization by inhalation and skin contact. People do not breathe dust. In case of contact with eyes, rinse immediately with plenty of water and seek medical advice. People must wear suitable protective clothing, gloves and eye/face protection.
People can use the following data to convert to the molecule structure.
1.SMILES: I[Al](I)I
2.InChI: InChI=1/Al.3HI/h;3*1H/q+3;;;/p-3
3.InChIKey: CECABOMBVQNBEC-DFZHHIFOAE
4.Std. InChI: InChI=1S/Al.3HI/h;3*1H/q+3;;;/p-3
About|Contact|Cas|Product Name|Molecular|Country|Encyclopedia
Message|New Cas|MSDS|Service|Advertisement|CAS DataBase|Article Data|Manufacturers | Chemical Catalog
©2008 LookChem.com,License: ICP
NO.:Zhejiang16009103
complaints:service@lookchem.com Desktop View