hexamethyldisilathiane
A
Tris(trimethylsilyl) phosphate
B
O,O,O-tris(trimethylsilyl) phosphorothioate
Conditions | Yield |
---|---|
With phosphorus pentoxide at 170 - 180℃; for 10h; | A 85% B 98% |
chloro-trimethyl-silane
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
In formamide for 1h; Inert atmosphere; Schlenk technique; | 98% |
Hexamethyldisiloxane
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
Stage #1: Hexamethyldisiloxane With phosphoric acid at 160 - 170℃; under 4500.45 - 6000.6 Torr; for 5h; Autoclave; Reflux; Stage #2: N-trimethylsilyldihydropyrrole at 100℃; under 760.051 Torr; | 96.52% |
chloro-trimethyl-silane
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
With potassium dihydrogenphosphate In hexane Reflux; | 96% |
With ammonium dihydrogen phosphate at 78℃; for 3h; Temperature; Reagent/catalyst; Time; | 89.6% |
With phosphoric acid | |
With phosphoric acid Schlenk technique; Inert atmosphere; | |
With phosphoric acid Inert atmosphere; |
Conditions | Yield |
---|---|
With saccharin In acetonitrile for 1h; Heating; | 93% |
N-trimethylsilyl-pyrrolidin-2-one
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
With lithium dihydrogenphosphate at 20℃; for 1h; | 86% |
tetrakis(trimethylsiloxy)phosphonium iodide
A
trimethylsilyl iodide
B
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
In benzene Heating; during 5 h the solvent was distilled off, the temp. rose to 110 deg C; | A n/a B 85% |
C22H50O10P2SSi5
A
Tris(trimethylsilyl) phosphate
B
bis(trimethylsilyl) (1,1-dioxido-3Н-2,1-benzoxathiol-3-yl)phosphonate
Conditions | Yield |
---|---|
at 90 - 110℃; under 1 Torr; | A n/a B 52% |
N,O-bis-(trimethylsilyl)-acetamide
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
With trichlorophosphate at 120℃; for 1h; | 26% |
tris(trimethylsilyl) phosphite
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
With trityl-glycidol at 130 - 150℃; | 24% |
With styrene oxide at 130 - 150℃; |
1,1,1,3,3,3-hexamethyl-disilazane
A
Tris(trimethylsilyl) phosphate
B
Tetrakis(trimethylsilyl) pyrophosphate
C
1,1,3,5,7,7-hexakis(trimethylsilyl) pyrophosphate
Conditions | Yield |
---|---|
With phosphorus pentoxide at 100 - 140℃; for 2h; Further byproducts given; | A 21% B 6% C 3% D 3% |
Methoxytrimethylsilane
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
With phosphonic Acid; air |
Hexamethyldisiloxane
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
With phosphorus pentoxide | |
With phosphorus pentoxide durch langsame Destillation; | |
With phosphorus pentoxide In neat (no solvent) very slow distn. of (CH3)3SiOSi(CH3)3 over P2O5;; | |
With P4O10 In neat (no solvent) very slow distn. of (CH3)3SiOSi(CH3)3 over P2O5;; |
phosphoric acid, bis(trimethylsilyl)monomethyl ester
phenylthiotrimethylsilane
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
With perhydrodibenzo-18-crown-6; potassium thiophenolate In benzene |
phosphoric acid ethyl ester-bis-trimethylsilanyl ester
phenylthiotrimethylsilane
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
With perhydrodibenzo-18-crown-6; potassium thiophenolate In benzene |
phenylthiotrimethylsilane
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
With perhydrodibenzo-18-crown-6; potassium thiophenolate In benzene |
trimethylsilyl acetate
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
With phosphorus(V) oxybromide at 90℃; for 3h; |
Conditions | Yield |
---|---|
durch langsame Destillation; |
1,1,1,3,3,3-hexamethyl-disilazane
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
With ammonium hypophosphite |
bis(trimethylsilyl)phosphonite
allyl-trimethyl-silane
A
bis(trimethylsilyl) phosphonate
B
Tris(trimethylsilyl) phosphate
C
trimethylsilyl [3-(trimethylsilyl)propyl]phosphinate
D
bis(trimethylsilyl) [3-(trimethylsilyl)propyl]phosphonate
E
trimethylsilylhypophosphite
Conditions | Yield |
---|---|
With 2,2'-azobis(isobutyronitrile); water for 7h; Reflux; | A n/a B 0.1 g C 0.45 g D 0.12 g E n/a |
tris(trimethylsilyl) phosphite
A
bis(trimethylsilyl) phosphonate
B
Tris(trimethylsilyl) phosphate
C
Tetrakis(trimethylsilyl) pyrophosphate
D
Trimethylsilyldifluorophosphat
E
bis(trimethylsilyl) phosphorofluoridate
Conditions | Yield |
---|---|
With [1,3]-dioxolan-2-one; lithium hexafluorophosphate; water; Diethyl carbonate In [D3]acetonitrile at 20℃; Glovebox; Inert atmosphere; |
tris(trimethylsilyl) phosphite
A
bis(trimethylsilyl) phosphonate
B
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
With nickel(II) chloride hexahydrate at 160℃; for 42h; Schlenk technique; Inert atmosphere; |
Conditions | Yield |
---|---|
In hexane N2-atmosphere; addn. of soln. of GaMe3 (10% excess) to phosphate ester soln.; concn., crystd. on cooling (-24°C), collection (filtration), drying (vac.); elem. anal.; | 95% |
Tris(trimethylsilyl) phosphate
trimethylsilyl fluoride
Conditions | Yield |
---|---|
With sodium fluoride 150 to 200 deg C; | 91.5% |
Tris(trimethylsilyl) phosphate
(fluoro)bis(cyclopentadienyl)vanadium
tris(pentafluorophenyl)borate
Conditions | Yield |
---|---|
Stage #1: Tris(trimethylsilyl) phosphate; tris(pentafluorophenyl)borate In dichloromethane at 20℃; for 1h; Inert atmosphere; Glovebox; Stage #2: (fluoro)bis(cyclopentadienyl)vanadium In dichloromethane at 20℃; for 24h; Inert atmosphere; Glovebox; | 90% |
Tris(trimethylsilyl) phosphate
trimethylsilylazide
Conditions | Yield |
---|---|
With sodium azide at 150℃; for 0.166667h; | 87% |
Conditions | Yield |
---|---|
With sodium azide at 150℃; for 0.166667h; other substrates, other reagents; | A 87% B n/a |
Conditions | Yield |
---|---|
In hexane N2-atmosphere; addn. of soln. of AlMe3 (10% excess) to phosphate ester soln. at cooling, warming to room temp.; evapn. (vac.); elem. anal.; | 87% |
bis(trimethylsilyl) phosphonate
Tris(trimethylsilyl) phosphate
ethyl N-phenylformimidate
O,O',O'',O'''-tetra(trimethylsilyl) N-anilinomethylenebisphosphonate
Conditions | Yield |
---|---|
With zinc(II) chloride at 150 - 160℃; for 1h; Reflux; | 86% |
18-crown-6 ether
Tris(trimethylsilyl) phosphate
potassium tert-butylate
Conditions | Yield |
---|---|
In 1,2-dimethoxyethane for 0.166667h; | 85% |
Tris(trimethylsilyl) phosphate
trimethylsilane adduct of trimethylsilylium tetrakis(pentafluorophenyl)borate
Conditions | Yield |
---|---|
In toluene for 1h; Sonication; | 83% |
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
In tetrahydrofuran N2-atmosphere; refluxing for 5 h; elem. anal.; | 82% |
Conditions | Yield |
---|---|
In tetrahydrofuran N2-atmosphere; refluxing for 5 h; evapn., recrystn. (hexane); elem. anal.; | 81% |
Conditions | Yield |
---|---|
In hexane N2-atmosphere; addn. of soln. of AlMe3 (10% excess) to phosphate ester soln. at cooling, warming to room temp.; concn., crystd. on cooling (-24°C), collection (filtration), drying (vac.); elem. anal.; | 74% |
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
In toluene at 20℃; Schlenk technique; Inert atmosphere; | 69% |
Tris(trimethylsilyl) phosphate
titanium tetrachloride
Conditions | Yield |
---|---|
In further solvent(s) boiling gently soln. of OP(OSi(CH3)3)3 (0.51 mmol) and TiCl4 (0.50 mmol) in ClSi(CH3)3; allowing to cool;; pptn.;; | 66% |
In benzene-d6 byproducts: ClSi(CH3)3; briefly heating to boiling in benzene-d6;; not isolated, detected by 1H- and 31P-NMR;; |
Tris(trimethylsilyl) phosphate
Conditions | Yield |
---|---|
In acetonitrile inert atmosphere; crystn. (40-50°C, 4 h, room temp., 2 d); elem. anal.; | 59% |
Tris(trimethylsilyl) phosphate
tert-butylaluminium dichloride
Conditions | Yield |
---|---|
In tetrahydrofuran dropwise addn. of 1 equiv. P-compd. to Al-compd. (stirring), refluxing for 2 h; vol. reduction (vac.), crystn. (-20°C, overnight); elem. anal.; | 56% |
Tris(trimethylsilyl) phosphate
bis(tert-butyl)aluminium chloride
Conditions | Yield |
---|---|
In tetrahydrofuran dropwise addn. of 1 equiv. P-compd. to Al-compd. (stirring), refluxing for 2 h; vol. reduction (vac.), crystn. (-20°C, overnight); elem. anal.; | 56% |
Conditions | Yield |
---|---|
150 to 200 deg C; | 45.5% |
Tris(trimethylsilyl) phosphate
(fluoro)bis(cyclopentadienyl)vanadium
tris(pentafluorophenyl)borate
Conditions | Yield |
---|---|
Stage #1: Tris(trimethylsilyl) phosphate; tris(pentafluorophenyl)borate In tetrahydrofuran at 20℃; for 1h; Inert atmosphere; Glovebox; Stage #2: (fluoro)bis(cyclopentadienyl)vanadium In tetrahydrofuran at 20℃; for 48h; Inert atmosphere; Glovebox; | 43.2% |
tris[μ-[2,6-bis(1-methylethyl)benzenaminato]]trimethyltricycloaluminum
Tris(trimethylsilyl) phosphate
(MeAl)[2,6-(i-Pr)2C6H3N]3(Al[OP(OSiMe3)3])2(O3POSiMe3)
Conditions | Yield |
---|---|
In toluene under N2 atm. OP(OSiMe3)3 was added dropwise to alumazene in toluene andrefluxed for 24 h; react. mixt. was cooled to room temp.; elem. anal.; | 36% |
IUPAC Name: Tris(trimethylsilyl) phosphate
Synonyms: Phosphoric acid tris(trimethylsilyl) ester ; Timtec-bb sbb001292 ; Tris(trimethylsilyl) phosphate ; Ester ; Phosphoric acid, tms ; Phosphoric acid, tristrimethylsilyl ; Phosphoric acid, tritms ; Silanol, trimethyl-, phosphate (3:1)
Product Categories: Si (Classes of Silicon Compounds);Silicon Compounds (for Synthesis);Silyl Esters;Si-O Compounds;Synthetic Organic Chemistry
CAS NO: 10497-05-9
Molecular Formula of Phosphoric acid, tris(trimethylsilyl) ester (CAS NO.10497-05-9) : C9H27O4PSi3
Molecular Weight of Phosphoric acid, tris(trimethylsilyl) ester (CAS NO.10497-05-9) :314.54
Molecular Structure of Phosphoric acid, tris(trimethylsilyl) ester (CAS NO.10497-05-9) :
EINECS: 234-028-1
Mol File: 10497-05-9.mol
Index of Refraction: 1.414
Surface Tension: 20.7 dyne/cm
Density: 0.96 g/cm3
Flash Point: 110.8 °C
Enthalpy of Vaporization: 44.85 kJ/mol
Boiling Point: 230.8 °C at 760 mmHg
Vapour Pressure: 0.0977 mmHg at 25°C
Melting point: 3-4 °C(lit.)
1. | orl-rat LD50:3440 mg/kg | MarJV# Personal Communication from Josef V. Marhold, VUOS, 539-18, Pardubice, Czechoslovakia, to the Editor of RTECS, Cincinnati, OH, March 29, 1977 29MAR77 . |
Reported in EPA TSCA Inventory.
Moderately toxic by ingestion. When heated to decomposition it emits toxic fumes of POx. See also ESTERS.
Hazard Codes F,Xi
Risk Statements 11-36/37/38
R11:Highly flammable.
R36/37/38:Irritating to eyes, respiratory system and skin.
Safety Statements 16-26-36
S16:Keep away from sources of ignition.
S26: In case of contact with eyes, rinse immediately with plenty of water and seek medical advice.
S36:Wear suitable protective clothing.
RIDADR UN 1993 3/PG 2
WGK Germany 2
RTECS TC9700000
F 10-21
TSCA Yes
HazardClass 3.2
PackingGroup III
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