Electrical conductivity, σ(T), of a-Ge3Nx (3.7

We present a novel method for germanium doping of gallium nitride by in-situ chlorination of solid germanium during the hydride vapour phase epitaxy (HVPE) process. Solid germanium pieces were placed in the doping line with a hydrogen chloride flow directed over them. We deduce a chlorination re...

Under its crystalline form, the ZnGeN2 alloy is promising for optoelectronic devices such as LEDs because of its large, direct and adjustable band gap. Nevertheless, data are scarce, more especially for the amorphous form. We report here on the study of zinc germanium nitride amorphous thin film...

We report the evidence for irreversible changes in the conductivity, σ(T), of a-Ge3Nx (3.7

This work reports a detailed investigation of the properties of germanium nitride and oxynitride films to be applied as passivation layers to Ge radiation detectors. All the samples were deposited at room temperature by reactive RF magnetron sputtering. A strong correlation was found between the...

Cluster modelling based on ab-initio calculations testifies lack of intermediate optimally-constrained phase in binary GexSe100-x system within expected reversibility window (20 ≤ ×

A previews study of germanium selenide glass films by scanning electron microscopy and atomic force microscopy revealed a heterogeneous surface morphology consisting of granular regions ∼15–50 nm in size, which cause high optical losses. The present work was performed in order to further chara...

Predictive calculations based on density functional theory (DFT) are used here to study the electronic and optical properties of GeSe monolayer after adsorbing gas molecules (O2, NH3, SO2, H2, CO2, H2S, NO2, CH4, H2O, NO, CO). Our results reveal that for all the gas molecules considered, only NH...

The three solid-state indium/germanium selenides Cs4In8GeSe16, CsInSe2, and CsInGeSe4 have been synthesized at 1173 K. The structure of Cs4In8GeSe16 is a three-dimensional framework whereas those of CsInSe2 and CsInGeSe4 comprise sheets separated by Cs cations. Both Cs4In8GeSe16 and CsInGeSe4 di...

Crystal structure of a novel quaternary thallium indium germanium selenide TlInGe2Se6 was investigated by means of powder X-ray diffraction method. It was determined that the compound crystallizes in the trigonal space group R3 with the unit cell parameters a = 10.1798(2) Å, c = 9.2872(3) Å. The...

The kinetics associated with the glass transition is investigated using differential scanning calorimetry (DSC) for germanium selenide glasses with Ge content ranging from 0 to 30 at.% and average coordination numbers ranging from 2.0 to 2.6. As Ge content increases, the glass transition region ...

Recently, two-dimensional layered materials have come forth as encouraging candidates for advanced electronic and optoelectronic applications. Anode materials with high energy-density and diffusion rate are fundamental features for the development of non-lithium ion batteries. Based on the densi...

Dimensionality reduction has been proved as a feasible route to enhance the performance of thermoelectric materials for renewable energy applications. In this article, we investigate the effect of dimensions reduction on thermoelectric properties of GeSe using the density functional theory and B...

A recent study of Hu et al. [1] predicted that 2D single layer of asymmetric washboard germanium selenide is found to be stable and display semiconducting properties. Motivating from this study, we have shown that another phase, which is 2D buckled honeycomb germanium selenide, is also stable. T...

Based on first-principles calculations, we studied the effect of phosphorus atoms substitutional doping at the edges of one dimensional zigzag germanium selenide nanoribbon (ZGeSeNR). The formation energies of all the doping configurations are found lower than that of pristine ZGeSeNR, which imp...

Low temperature electrodeposition of Ga-Sb film is investigated from the 1-butyl-1-methylpyrrolidinium dicyanamide room temperature ionic liquid containing anhydrous GaCl3 and SbCl3. Voltammetry shows that the redox potential of Ga(III)/Ga is more negative than that of the Sb(III)/Sb. While the ...

100 MeV swift heavy silver (Ag+7) ion irradiation at normal incidence results in the formation of dense and ordered nanosized dots on molecular beam epitaxy (MBE) grown GaSb epitaxial layers. The shape, size and density of the nanodots are found to be strongly dependent on the ion fluence. Ripen...

Extrinsic diffusion of zinc (Zn) in gallium antimonide (GaSb) under Ga-rich conditions was analyzed on the basis of the kick-out and the dissociative diffusion mechanism. It is concluded that the changeover of interstitial Zn to substitutional gallium (Ga) sites is mainly mediated by Ga intersti...

Direct electrodeposition of phase-pure crystalline gallium antimonide (GaSb) films has been achieved at low processing temperatures from an aqueous electrolyte. A liquid gallium electrode was used to drive the electroreduction of Sb2O3 dissolved in 0.6 M NaOH. The quality and purity of the resul...

This review paper discusses different synthesis methods and characterization techniques of gallium Phosphide for its application in various fields.