The standard enthalpies of formation of some congruent-melting compounds in the binary systems ReX, where Re  Ce, Pr or La and X  C, Si or Ge have been determined by direct-synthesis calorimetry at 1473 ± 2 K. The following values of ΔHfo are reported: CeC2, −25.4 ± 1.4 kJ (mol atom)−1;...

We searched for new structural, magnetic and superconductivity phases in the Pr–Si system using high-pressure high-temperature and arc melting syntheses. Both high and low Si concentration areas of the phase diagram were explored. Although a similar approach in the La–Si system produced new st...

High-k polycrystalline Pr2O3 thin films have been deposited by metal organic chemical vapor deposition (MOCVD) technique on Si(0 0 1) and 4H–SiC(0 0 0 1) substrates. MOCVD processes have been carried out from the Pr(tmhd)3 (H-tmhd= 2,2,6,6-tetramethyl-3,5-heptandione) precursor. Complete struct...

The growth of thin praseodymium oxide films on silicon (111) using small deposition rates under oxygen-deficient conditions was investigated in the range from submonolayer up to six monolayers coverage by transmission electron microscopy (TEM) and photoemission spectroscopy (PES). A detailed ana...

The interface and layer structure of praseodymium (Pr) oxide layers grown on Si(0 0 1) from a high-temperature effusion cell are studied using grazing incidence X-ray diffraction. Due to the interdiffusion of praseodymium and silicon atoms, Pr silicide forms in the layers. We find that Pr silici...

Reaction of bis(cyclopentadienyl)-2,3-dimethylzirconaindole, obtained by addition of 2-butyne to benzynezirconocene, with PCl3, affords 1-chloro-2,3-dimethylphosphindole (1-chloro 2,3-dimethylbenzophosphole in a one-pot reaction and in moderate yield. Treatment of this compound with potassium an...

A new ternary phosphide, Zn3SmP3, was synthesized by direct reaction of the elements. Recrystallization by isothermal chemical vapor transport, using iodine as the transporting agent, yielded single crystals. The structure of Zn3SmP3 was refined from single crystal X-ray data in the hexagonal sp...

Amorphous yttrium tantalate, as well as solid solutions containing zirconia, transform on heating to a monoclinic-prime phase and then, with further heating, to a crystalline tetragonal (T) solid solution phase at ∼1450 °C. On subsequent cooling the tetragonal phase converts by a second-order ...

Multiferroic (1 − x)Pb(Fe0.5Ta0.5)O3–xPb(Zr0.53Ti0.47)O3 (or PFT–PZT) ceramics were synthesized by solid-state reaction method. The crystal structure and phase formation of the ceramics were examined by X-ray diffraction (XRD). The local structure surrounding Fe and Ti absorbing atoms was inve...

The effect of different concentration of Fe on the phase transition behavior of Lead ytterbium tantalate is investigated by dielectric and differential scanning calrimetry measurements. The samples are prepared through solid state reaction method and it has been found that the sintering temperat...

This study reports the synthesis and the structural and spectroscopic characterization of Eu3+-doped yttrium tantalate prepared by a new sol–gel method, which affords the orthorhombic Y3TaO7 and monoclinic YTaO4. Eu3+ doping influences the crystallization kinetics; its presence delays YTaO4 for...

Novel strontium bismuth tantalate (Sr0.8Bi2.2Ta2O9 (SBT)) modified with 3 and 5 mol% ratio barium silicate (Ba2SiO4) thin films were grown on Pt(100 nm)/Ti(50 nm)/SiO2/Si(100) substrates by spin coating technique. The influence of barium silicate doping in SBT was studied from the view point of ...

Thick film compositions based on solid solutions of relaxor ferroelectric Pb(Fe1/2Ta1/2)O3 and normal ferroelectric PbTiO3 were prepared and applied for class II capacitors. The dielectric layers were fired at 870 °C. In order to shift the temperature of ferroelectric–paraelectric transition u...

Lead–scandium–tantalate has been deposited in the perovskite form onto 100 mm diameter substrates by liquid injection metal organic chemical vapour deposition at substrate temperatures of 550–600°C . The deposition of the single metal oxides of lead, scandium and tantalum from Pb(thd)2, Sc(t...

Three different suspensions of pure titanium carbide were thermally sprayed through high velocity suspension flame spraying (HVSFS) in order to deposit mixed titanium oxide–titanium carbide coatings. One suspension was prepared by using milled feedstock powder (TC1), while two suspensions were ...

The fabrication of germanium-based near infrared photo-resistors on a flexible substrate is reported. The devices were fabricated using plasma enhanced chemical vapor deposition of amorphous germanium on an insulating stack layer of silicon nitride and silicon oxide on a flexible polyimide thin ...

Crystallization by hydride vapor phase epitaxy method of gallium nitride single crystals doped with germanium and properties of the obtained material are described in this paper. Growth was performed in hydrogen and nitrogen carrier gas. The results were studied and compared. Influence of differ...

The magnetic property of the pristine and germanium-doped (10, 0) boron-nitride (BN) nanotube has been studied using a DFT-LSDA method. The germanium substitution for either a single boron or single nitrogen atom yields a spin-polarized, almost dispersionless π bands within the original band ga...

The more efficient dielectric material and structure have been developed for fast phase-change optical recording systems. The germanium nitride thin film was reactively sputtered using a d.c. chamber, operated at 3 kW with a mixed gas plasma of argon and nitrogen. The dielectric thin film of 11–...

Semiconductor detectors with Silicon as the sensor material are widely used in High Energy Physics (HEP) experiments for high precision tracking and determination of primary and secondary vertices with good spatial resolution. They are close to the interaction point, so they are prone radiation ...