Thin YSi2−x layers are formed by 195 keV Y ion implantation in Si(111) substrates to a dose of 2 × 1017 Y+/cm2 at 500 °C followed by annealing in nitrogen atmosphere at different temperatures for 1 h. The investigation of the phase composition is carried out by Rutherford backscattering spectr...
Nb-silicide-based alloys were directionally solidified in yttria moulds. As a result of thermal dissociation of yttria, the alloys were slightly contaminated with oxygen, which caused a competitive oxidation between yttrium and hafnium. The addition of 0.15 at.% yttrium reduced the oxygen increm...
Yyttrium ultra-thin films (coverage 1100 K). Desorbing species such as Y2Si and SiO were recorded and attributed to the cracking of silicate and silica respectively. A significant amount of yttrium always remains and/or diffuses into the silicon substrate, even after strong annealing. Such a pro...
We have identified, by means of synchrotron radiation X-ray photoemission spectroscopy, several core-level shifted components in the Si-2p photoemission core level peak from a thin yttrium silicide layer epitaxially grown on a Si(1 1 1) surface. We have unequivocally assigned these components to...
Buried hexagonal AlB2-type YSi2 layers were formed by metal vapor vacuum arc implantation of 100 keV yttrium ions to a dose of 1×1018Y+cm−2 into p-type Si (1 1 1) wafers. The heterostructures were analyzed by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), Fourier transfo...
The formation of a thin layer of hexagonal Y Si2−x phase on a single-crystal Si(111) substrate by implantation of 195 keV Y ions with a dose of 5×1016Y +/cm2 at room temperature (RT) is investigated. The structural characterization of the as-implanted and annealed samples is performed using Rut...
Yttrium silicide formation and its contact properties on Si(1 0 0) have been studied in this paper. By evaporating a yttrium metal layer onto Si(1 0 0) wafer in conventional vacuum condition and rapid thermal annealing, we found that YSi2–x begins to form at 350 °C, and is stable to 950 °C. A...
Tungsten selenide (WSe2) is a crystalline adsorbent with a lamellar structure. In order to remove the residual non-homogeneity of the tungsten selenide surface, samples were subjected to adsorption modification with small amounts of liquid phases of different polarities [poly(ethylene glycol) 15...
Thin films of WSe2 have been deposited onto a conductive substrate (tungsten foil) using a relatively simple chemical-vapor-transport technique. X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, X-ray powder diffraction, scanning electron microscopy, and high-resolution tra...
Tin selenide (SnSe) is a very promising thermoelectric material, but there are few reports related to the thermoelectric properties of its thin films, especially for n-type SnSe. In this work, n-type SnSe thin films were synthesized via thermal evaporation using powdered SnSe that was prepared d...
Thin films of tungsten selenides (WSex) were obtained by using a method of shadow-masked pulsed laser deposition. The deposition at room temperature of substrates caused the formation of Se-enriched amorphous films (Se/W∼5) with pronounced surface roughness because of an effective nanoparticle ...
The exploration of new thermoelectric material is the current area of research in energy conversion and storage technologies, in that nanocomposite approach is a promising root to get desirable thermoelectric properties. The present study demonstrates a composite containing highly conductive tit...
Investigation of new X-ray contrast media for radiography is an important field of science since discovering of X-rays in 1895. Despite the wide diversity of available X-ray contrast media the toxicity, especially nephrotoxicity, is still a big problem to be solved. The octahedral metal-cluster ...
Water-stable and cavity-contained rhenium metallacycles were synthesized, and their ability to selectively interact with volatile organic compounds (VOCs) systematically studied using attenuated total reflection infrared (ATR-IR) spectroscopy. Integrating the unique properties of rhenium metalla...
An evanescent wave infrared chemical sensor was developed for the selective detection of odorous amino compounds in the atmosphere. To achieve this goal, cavity-containing rhenium metallacycles with multi-recognition sites were prepared and used as host molecules to modify the surface of an evan...
The structure of a cluster-type rhenium telluride of composition Re6Te15 was determined which is the only thermodynamically stable phase in the system rhenium-tellurium. The structure of Re6Te15 can be envisaged as cosisting of cluster complexes [Re6Te8]Te6 which are held together throgh telluri...
The compound formation in the ternary system Pr–Si–O initiated by ion beam synthesis inside bulk-Si was studied by transmission electron microscopy and X-ray diffraction. The oxygen content was varied by additional O+ ion implantation and by oxidation of the bulk-Si. For annealing temperatures...
The rare earth Pr doped Ca1−xPrxMnO3 (x=0, 0.06, 0.08, 0.1, 0.12, and 0.14) compound bulk samples were prepared to study the effect of Pr doping on thermoelectric transport properties of CaMnO3 compound system. The doped samples exhibited single phase composition within the experimental doping r...
We have investigated the effects of thermal annealing processes on Pr2O3/Pr–O–Si system grown using the metal organic chemical vapor deposition (MOCVD) technique from the Pr(tmhd)3 [(H-tmhd = 2,2,6,6-tetramethylheptane-3,5-dione)] precursor. The influence of different atmospheres (Ar and O2) d...
Binary praseodymium silicides have been thoroughly investigated with respect to their crystal chemistry and physical properties. Formation and structure types of all known binary phases have been confirmed. Moreover, the crystal structure determination of a phase, previously reported to exist wi...
About|Contact|Cas|Product Name|Molecular|Country|Encyclopedia
Message|New Cas|MSDS|Service|Advertisement|CAS DataBase|Article Data|Manufacturers | Chemical Catalog
©2008 LookChem.com,License: ICP
NO.:Zhejiang16009103
complaints:service@lookchem.com Desktop View