In this work, sulfonated poly(ether ether ketone) (SPEEK) nanocomposite membranes were prepared with high loading of phosphotungstic acid (HPW) immobilized by polydopamine coated halloysite nanotubes (DHNTs). XPS and FTIR analysis revealed the formation of acid-base interactions between HPW and ...
Mesoporous silica gel containing embedded phosphotungstic acid (PTA) was synthesized by sol-gel co-condensation of tetraethoxysilane with PTA in acidic media. The obtained material had high BET surface area and pore volume. A characteristic band of the Keggin structure of PTA was present in its ...
Novel solid acid catalyst PWAl-200 was synthesized by a new green method of electric-flocculation of phosphotungstic acid (PW) with aluminum as electrodes to transform glucose to 5-hydroxymethylfurfural (5-HMF). Through electric-flocculation, PW was deposited in the hydrated aluminum received fr...
The selective condensation of 2-methylfuran and furfural to C15 compounds is performed using supported phosphotungstic acid catalysts in a continuous-flow fixed-bed reactor. The formation of unwanted viscous tetramers (C20) is suppressed when the continuous-flow reaction system is used. Stronger...
A novel (R-HDPE/CuO-NP-PTA) nanocomposite was designed based on doping recycled high-density polyethylene (R-HDPE) with phosphotungstic acid (PTA) and copper oxide nanoparticles (CuO NPs). It was prepared and investigated for the ability to shield γ-rays. The composite samples were fabricated u...
Many studies have been conducted regarding the separation behavior of carriers (electrons and holes) because of involving the generation of superoxide radicals (O2−), hydroxyl radicals (HO), and hydrogen peroxide (H2O2) in the photocatalytic process of heteropolyacids. Instead, relatively little...
Precision timing detectors for high energy physics experiments with temporal resolutions of a few 10 ps are of pivotal importance to master the challenges posed by the highest energy particle accelerators such as the LHC. Calorimetric timing measurements have been a focus of recent research, en...
Precision timing properties of high energy physics detectors in high luminosity colliders has become an important requirement for the success of particle detection, of which new calorimeter with timing precision of few tens of ps is the main interest. In this paper, we presented the first calori...
The phosphide telluride Ti2PTe2 can be synthesised from the elements or from oxides in a thermite type reaction. Both ways have been optimised by consideration of the thermodynamic behaviour of the compound. Hence, the investigation of phase equilibria in the ternary system Ti/P/Te and of the th...
A series of TiSe1.60−xTex, where 0 ≤ x ≤ 1.60, was prepared. The samples were characterized by powder X-ray diffraction and thermogravimetric analysis in Ar and N2 atmospheres. The XRD measurements showed that the titanium seleno-tellurides form a continuous solid solution of a hexagonal struc...
We report the electrodeposition of bismuth telluride thin films on to titanium nitride (TiN) electrodes from a weakly coordinating solvent, dichloromethane (CH2Cl2), using the halometallates, [NnBu4][BiCl4] and [NnBu4]2[TeCl6] with 0.1 M [NnBu4]Cl as the supporting electrolyte. The elemental com...
Lead Telluride (PbTe) nanorods have been uniformly grown on silicon substrates, using the thermal evaporation technique under high vacuum conditions. The structural and morphological studies are done using X-ray diffraction and scanning electron microscopy. Optical nonlinearity studies using the...
Electrical resistivity, magnetic susceptibility, and lattice parameter measurements for the family of low-dimensional compounds, M4ZTe4 (M=Ta, Z=Si, Cr, Fe, Co, and Ni; M=Nb, Z=Si, Fe) are reported. The compounds with Z=Si are diamagnetic and the resistivity curves suggest two phase transitions,...
Tungsten oxide (WO3) is a wide band gap semiconductor that has received extensive interest in optoelectronic applications. However, its band gap is too large for applications based on the absorption of visible light. To that end, we have modulated the band gap of WO3 thin films through mixing it...
The resistive switching characteristics of Pt/TaOx/CuTe devices were investigated with CuTe bottom electrodes deposited under different working pressure. The CuTe bottom electrode was prepared using a magnetron radio-frequency sputtering. The resistance and distribution of HRS were decreased wit...
Ta1.09Fe2.39Te4 was prepared by chemical transport from the elements in sealed silica tubes in a temperature gradient from 700 to 600 °C. It crystallizes in the monoclinic space group P2/m with a = 6.162(2) Å, b = 7.852(3) Å, c = 7.250(3) Å, β = 95.32(3)° and Z = 2. Its structure can be de...
Ta2Te3 was prepared by reducing TaTe2 with tantalum at 1350 K in a sealed molybdenum crucible. Ta2Te3 disproportionates above 1420 K yielding the ditelluride and as yet unknown Ta6Te5. The stability limit for the substitutional sesquitellurides NbxTa2−xTe3 is reached at x ≈ 1 . The novel layere...
Telluride films are widely applied in data storage devices (advanced resistive memories, DVDs and Blue-rays disks), photovoltaic cells and infrared detectors. The properties of thin telluride alloys are deeply influenced by their chemical composition and compositional depth profile, whereas surf...
The structure of a hexagonal approximant of the dodecagonal tantalum telluride dd-Ta1.6Te was studied by means of high resolution transmission electron microscopy and electron diffraction. A hierarchical building principle underlying the structures of two other approximants, Ta97Te60 and Ta181Te...
We have studied by means of scanning tunneling microscopy and low energy electron diffraction techniques the surface morphology of very thin layers of yttrium silicide epitaxially grown on a Si(1 1 1) substrate. For an Y coverage of 1 ML a two-dimensional p(1×1) silicide layer is formed. The su...
About|Contact|Cas|Product Name|Molecular|Country|Encyclopedia
Message|New Cas|MSDS|Service|Advertisement|CAS DataBase|Article Data|Manufacturers | Chemical Catalog
©2008 LookChem.com,License: ICP
NO.:Zhejiang16009103
complaints:service@lookchem.com Desktop View