We report the ion beam based single step synthesis process of surface-patterned amorphous Silicon (a-Si) with a buried plasmon active nickel silicide layer for the realization of cost-effective, higher efficiency Silicon (Si) photovoltaic devices. Simultaneous amorphization, surface pattern form...

Pt-doped NiSi‒NiSi2 thin films in a uniform lamellar structure with a periodicity on the scale of a few tens of nanometers were formed on Si(001) substrates using a continuous laser scanning process. When the Pt-doped NiSi film was melted at high temperatures and was supercooled at high solidifi...

Time and temperature dependencies of nickel silicide axial growth in Si nanowires (SiNWs) were studied for a temperature range of 300–440 °C and nanowire diameters of 30–60 nm. A square root time dependence of the total silicide intrusion length was found. It was concluded that formation of n...

The stability of nickel-based silicides integrated in CMOS circuits has been studied. The evolution of transistor electrical failures is then reported, linked to Ni abnormal migration through different process steps. We have found in our studies that Ni encroachment is not only due to NiSi2 clus...

In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigati...

The molar heat capacities of NiSi have been determined by low-temperature adiabatic calorimetry at temperatures between 8 and 400 K. From the heat capacity data the derived thermodynamic functions Δ0TH0 and S0 were calculated.At T = 298.15 K a molar standard heat capacity of 45.55 ± 0.05 J K−1...

Pulsed-laser annealing (PLA) was performed on a preformed Pt-doped Ni-rich silicide film (Ni2Si phase), and its microstructural and phase evolution were studied from submelting to melting condition by varying the laser power density (P). Vertically nonuniform compositional profile with an interf...

Photo-thermal processing assisted by laser irradiation is proposed as a novel method to control the phase of nickel silicide with reduction in the diffusion of nickel into the silicon substrate. The third harmonics of Nd3+:Y3Al5O12 laser (wavelength, 355 nm) is used for photo-thermal processing....

This work reports on the influence of nickel (Ni) thickness on the growth of nickel silicide nanowires (NiSi NWs) using a solid-phase diffusion controlled growth treatment. The NiSi NWs were grown on two different substrates (i.e. crystal silicon (c-Si) and Ni foil) which were coated with Ni fil...

We report detailed experimental investigation of the transport and magnetic properties of orthorhombic NiSi along with first principles studies of this phase and related nickel silicides. Neutron scattering shows no evidence for magnetism, in agreement with first principles calculations. Compari...

The ScTSb (T = Ni, Pd, Pt) antimonides adopt the cubic MgAgAs type structure (F¯43m, a = 605.21(6), wR2 = 0.0241, 94 F2 values and 7 variables for ScNi0.871(6)Sb; a = 630.00(6), wR2 = 0.0254, 147 F2 values and 7 variables for ScPd0.966(3)Sb; a = 631.1(1), wR2 = 0.0220, 89 F2 values and 5 variab...

A new low temperature synthetic route to binary and ternary metal antimonides is reported. Binary transition metal antimonides prepared include CoSb3, CoSb2, CoSb, NiSb, NiSb2, Cu2Sb and Mo3Sb7; new ternary compositions prepared include the series Co1−xNixSb (0.1 ≤ x ≤ 0.9). The intermetallic ...

The mixed anion compound, Ni2SbTe2, has been prepared from the elements in a potassium iodide flux. The crystal structure is solved in the hexagonal space group P63/mmc (no. 194) with lattice parameters a=b=3.9030(9) Å and c=15.634(3) Å. Sb and Te occupy crystallographically distinct anion sites...

Crystal structure of the new ternary antimonide Y3Ni6Sb5 was investigated using X-ray single crystal data: own type of structure, space group P21/m, a = 1.06358(6) nm, b = 0.42030(3) nm, c = 1.26520(9), β = 113.326(3)°, Z = 2, RF = 0.055, wRF = 0.063 for 1341 independent reflections and 98 var...

The structure of the new compound LaNiSb has been refined by the Rietveld technique from X-ray powder data. It is isotypic with ZrBeSi and has the hexagonal lattice constants a = 440.60(3) pm, c = 839.64(5) pm. The compounds LnNiSb (Ln = Ce, Pr, Nd, Sm) have the same structure. The cubic MgAgAs-...

Self-supported nickel antimonides/Ni architectured electrodes were prepared by solid state reaction from Ni thin film, Ni foam and Ni nanorods. This specific design is expected to optimize both NiSbx/Ni-current collector and NiSbx/electrolyte interfaces of the electrode in the Li ion battery. Th...

The electrochemical behaviour of direct ethylene glycol and glycerol oxidation on a novel nickel ion implanted-modified indium tin oxide electrode (NiNPs/ITO) was investigated. The investigation is used to verify the feasibility of using the NiNPs/ITO electrode in the ethylene glycol and glycero...

Bronze artifacts from Early Bronze Age in Europe often contain white inclusions in the metallic matrix, that are identified as tin oxides (SnO2 or Cassiterite). These inclusions are interpreted as un-smelted residues coming from the copper ore and are generally mixed with more complex oxidized i...

In this work, for the first time, uniform nickel and tin bimetallic oxide was synthesized by calcining the carbon nanospheres (CNSs) templates. This novel synthesized bimetallic oxide was used to fabricate a modified carbon paste electrode (Ni-Sn-oxide NSs/CPE). This electrode was used as a high...

Incorporating transition metal oxide species in the chemical structure of nickel-based electrocatalysts was beneficial in improving their activity as anode materials in fuel cells. Electroless deposition technique was employed to synthesize Ni-P-SnO2/C composites containing variable wt% values o...