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titanium
hydrogen
oxygen
A
titanium(IV) hydroxide
B
titanium dihydride
C
[TiH(OH)3]
D
titanium dihydroxide
Conditions | Yield |
---|---|
In neat (no solvent) Irradiation (UV/VIS); laser ablated Zr co-deposited with H2+O2 in excess Ar onto a 10K CsI window, UV-irradiated, annealed at 22-34 K (mechanism discussed); not isolated, detected by IR; |
titanium
hydrogen
oxygen-18
A
titanium dihydride
B
Ti((18)OH)2
E
Ti((18)OH)4
Conditions | Yield |
---|---|
In neat (no solvent) laser ablated Zr co-deposited with H2+(18)O2 in excess Ar onto a 10K CsIwindow, annealed at 20 K (mechanism discussed); not isolated, detected by IR; |
Conditions | Yield |
---|---|
500°C, p(H2)= 1.5-2 MPa, according to: K. N. Semenenko, V. P. Malyshev, L. A. Petrova, et al., Izv. Akad. Nauk SSSR, Neorg. Mater. 13 (1977) 2009; |
Conditions | Yield |
---|---|
components mixt. placing in glass vac. apparatus of Sieberts type, 20-25°C, P<1 atm; chem. anal.; X-ray diffraction, thermogravimetric and differential thermal anal.; |
Conditions | Yield |
---|---|
TiH2 grinding (argon atmosphere), loading into autoclave, Ar traces removal (room temp., vac. until ca. 1 Pa reached), heating to 500-750°C, admitting calulated hydrogen amount, sytem equilibration (500°C, 1 h); gas volumetric anal.; |
Conditions | Yield |
---|---|
TiH2 grinding (argon atmosphere), loading into autoclave, Ar traces removal (room temp., vac. until ca. 1 Pa reached), heating to 500-750°C, admitting calulated hydrogen amount, sytem equilibration (500°C, 1 h); gas volumetric anal.; |
Conditions | Yield |
---|---|
components mixt. placing in glass vac. apparatus of Sieberts type, 20-25°C, P<1 atm; chem. anal.; X-ray diffraction, thermogravimetric and differential thermal anal.; |
Conditions | Yield |
---|---|
components mixt. placing in glass vac. apparatus of Sieberts type, 20-25°C, P<1 atm; chem. anal.; X-ray diffraction, thermogravimetric and differential thermal anal.; |
Conditions | Yield |
---|---|
components mixt. placing in glass vac. apparatus of Sieberts type, 20-25°C, P<1 atm; chem. anal.; X-ray diffraction, thermogravimetric and differential thermal anal.; |
Conditions | Yield |
---|---|
TiH2 grinding (argon atmosphere), loading into autoclave, Ar traces removal (room temp., vac. until ca. 1 Pa reached), heating to 500-750°C, admitting calulated hydrogen amount, sytem equilibration (500°C, 1 h); gas volumetric anal.; |
Conditions | Yield |
---|---|
components placing in glass vac. apparatus of Sieverts type (20-25°C, P<1 atm), according to: V. I. Mikheeva, M. E. Kost, Zhur. Neorg. Khim. 3 (1958) 260; chem. anal.; X-ray diffraction, thermogravimetric and differential thermal anal.; |
Conditions | Yield |
---|---|
TiH2 grinding (argon atmosphere), loading into autoclave, Ar traces removal (room temp., vac. until ca. 1 Pa reached), heating to 500-750°C, admitting calulated hydrogen amount, sytem equilibration (500°C, 1 h); gas volumetric anal.; |
Conditions | Yield |
---|---|
TiH2 grinding (argon atmosphere), loading into autoclave, Ar traces removal (room temp., vac. until ca. 1 Pa reached), heating to 500-750°C, admitting calulated hydrogen amount, sytem equilibration (500°C, 1 h); gas volumetric anal.; |
Conditions | Yield |
---|---|
TiH2 grinding (argon atmosphere), loading into autoclave, Ar traces removal (room temp., vac. until ca. 1 Pa reached), heating to 500-750°C, admitting calulated hydrogen amount, sytem equilibration (500°C, 1 h); gas volumetric anal.; |
Conditions | Yield |
---|---|
TiH2 grinding (argon atmosphere), loading into autoclave, Ar traces removal (room temp., vac. until ca. 1 Pa reached), heating to 500-750°C, admitting calulated hydrogen amount, sytem equilibration (500°C, 1 h); gas volumetric anal.; |
Conditions | Yield |
---|---|
TiH2 grinding (argon atmosphere), loading into autoclave, Ar traces removal (room temp., vac. until ca. 1 Pa reached), heating to 500-750°C, admitting calulated hydrogen amount, sytem equilibration (500°C, 1 h); gas volumetric anal.; |
Conditions | Yield |
---|---|
TiH2 grinding (argon atmosphere), loading into autoclave, Ar traces removal (room temp., vac. until ca. 1 Pa reached), heating to 500-750°C, admitting calulated hydrogen amount, sytem equilibration (500°C, 1 h); gas volumetric anal.; |
Conditions | Yield |
---|---|
TiH2 grinding (argon atmosphere), loading into autoclave, Ar traces removal (room temp., vac. until ca. 1 Pa reached), heating to 500-750°C, admitting calulated hydrogen amount, sytem equilibration (500°C, 1 h); gas volumetric anal.; |
Conditions | Yield |
---|---|
TiH2 grinding (argon atmosphere), loading into autoclave, Ar traces removal (room temp., vac. until ca. 1 Pa reached), heating to 500-750°C, admitting calulated hydrogen amount, sytem equilibration (500°C, 1 h); gas volumetric anal.; |
Conditions | Yield |
---|---|
TiH2 grinding (argon atmosphere), loading into autoclave, Ar traces removal (room temp., vac. until ca. 1 Pa reached), heating to 500-750°C, admitting calulated hydrogen amount, sytem equilibration (500°C, 1 h); gas volumetric anal.; |
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